{"success":true,"data":[{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":270,"EQUIP_SKEY":477,"KOR_NM":"2차이온질량분석기","ENG_NM":"Secondary Ion Mass Spectrometry (SIMS)","PHOTO_SKEY":"274","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":176,"EQUIP_SKEY":401,"KOR_NM":"3차원 프로파일러","ENG_NM":"3D Profiler","PHOTO_SKEY":"178","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":177,"EQUIP_SKEY":402,"KOR_NM":"4단 면저항 측정기-1","ENG_NM":"4 Point Probe - 1","PHOTO_SKEY":"179","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3290,"EQUIP_SKEY":468,"KOR_NM":"8인치 트렉 시스템-1 (SVS)","ENG_NM":"PR Track_SVS - 1","PHOTO_SKEY":"280","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3280,"EQUIP_SKEY":469,"KOR_NM":"8인치 트렉 시스템-2 (SVS)","ENG_NM":"PR Track_SVS - 2","PHOTO_SKEY":"281","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3281,"EQUIP_SKEY":470,"KOR_NM":"8인치 트렉 시스템-3 (SVS)","ENG_NM":"PR Track_SVS - 3","PHOTO_SKEY":"282","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":263,"EQUIP_SKEY":489,"KOR_NM":"가시/자외선/근적외선 분광광도계","ENG_NM":"UV/Vis/nIR Spectrometer","PHOTO_SKEY":"267","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":280,"EQUIP_SKEY":466,"KOR_NM":"감광제 제거 시스템-Ⅱ","ENG_NM":"PR Asher_FEOL - 2","PHOTO_SKEY":"284","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":281,"EQUIP_SKEY":465,"KOR_NM":"감광제 제거 시스템-I","ENG_NM":"PR Asher_FEOL - 1","PHOTO_SKEY":"285","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":2428,"EQUIP_SKEY":1629,"KOR_NM":"고분해능 전계방출형 주사전자현미경","ENG_NM":"High Resolution FE-SEM-Ⅳ (JSM-IT710HR)","PHOTO_SKEY":"2488","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":244,"EQUIP_SKEY":430,"KOR_NM":"고온 습식/건식 산화로","ENG_NM":"Furnace Oxidation_LEAD","PHOTO_SKEY":"249","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":227,"EQUIP_SKEY":428,"KOR_NM":"고온열처리로-II","ENG_NM":"Furnace High Temp anneal_SiC","PHOTO_SKEY":"231","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":2427,"EQUIP_SKEY":1628,"KOR_NM":"고출력∙고분해능 분말용 X-선 회절분석기","ENG_NM":"High Resolution Powder-XRD","PHOTO_SKEY":"2487","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":290,"EQUIP_SKEY":457,"KOR_NM":"광학현미경-Diffusion","ENG_NM":"Optical Microscopes-Diffusion","PHOTO_SKEY":"294","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":289,"EQUIP_SKEY":458,"KOR_NM":"광학현미경-EBL","ENG_NM":"Optical Microscopes-EBL","PHOTO_SKEY":"293","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":293,"EQUIP_SKEY":454,"KOR_NM":"광학현미경-Etch","ENG_NM":"Optical Microscopes - Etch","PHOTO_SKEY":"297","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":292,"EQUIP_SKEY":455,"KOR_NM":"광학현미경-I","ENG_NM":"Optical Microscopes - Photo","PHOTO_SKEY":"296","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":291,"EQUIP_SKEY":456,"KOR_NM":"광학현미경-THinFilm","ENG_NM":"Optical Microscopes - ThinFilm","PHOTO_SKEY":"295","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3053,"EQUIP_SKEY":437,"KOR_NM":"구면수차보정 투과전자현미경","ENG_NM":"HR FE-TEM-Ⅱ (2200FS with Image Cs Corrector)","PHOTO_SKEY":"242","EQ_ROOM_SKEY":37,"FEATURE":"투과빔에 의한 나노구조/성분 분석 / 시험분석(금속피막두께 및 나노입자지름 측정) (TEM/BF/DF/SAED/EF-TEM(EELS Mapping)/STEM/BF/HAADF/EDS)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":237,"EQUIP_SKEY":438,"KOR_NM":"구면수차보정 투과전자현미경","ENG_NM":"HR FE-TEM-Ⅰ (2100F with Probe Cs-Corrector)","PHOTO_SKEY":"241","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":198,"EQUIP_SKEY":399,"KOR_NM":"국소 레이져 전계형 원자단층현미경","ENG_NM":"3D Atom Probe Tomography (LEAP4000X HR)","PHOTO_SKEY":"200","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":273,"EQUIP_SKEY":474,"KOR_NM":"급속열산화막용 급속열처리기","ENG_NM":"RTP for RTO","PHOTO_SKEY":"277","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3284,"EQUIP_SKEY":439,"KOR_NM":"노광기-1","ENG_NM":"I-Line Stepper - 1","PHOTO_SKEY":"240","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3283,"EQUIP_SKEY":440,"KOR_NM":"노광기-2","ENG_NM":"I-Line Stepper - 2","PHOTO_SKEY":"239","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3291,"EQUIP_SKEY":442,"KOR_NM":"노광기-3","ENG_NM":"I-Line Stepper - 3","PHOTO_SKEY":"237","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":234,"EQUIP_SKEY":441,"KOR_NM":"노광기-4","ENG_NM":"I-Line Stepper - 4","PHOTO_SKEY":"238","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":217,"EQUIP_SKEY":417,"KOR_NM":"다결정규소막 식각장치","ENG_NM":"Dry Etcher_Poly Si","PHOTO_SKEY":"221","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3286,"EQUIP_SKEY":447,"KOR_NM":"마스크 정렬 노광 장비","ENG_NM":"Mask Aligner_MA8","PHOTO_SKEY":"233","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":228,"EQUIP_SKEY":448,"KOR_NM":"마스크리스 레이저 리소그래피 시스템","ENG_NM":"Maskless laser lithography system","PHOTO_SKEY":"232","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3285,"EQUIP_SKEY":446,"KOR_NM":"마스크얼라이너","ENG_NM":"Mask Aligner_MA6","PHOTO_SKEY":"234","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":283,"EQUIP_SKEY":464,"KOR_NM":"메탈 공정용 감광막 제거 장치","ENG_NM":"PR Asher for BEOL","PHOTO_SKEY":"287","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":267,"EQUIP_SKEY":485,"KOR_NM":"물리증착장치(스퍼터)- I","ENG_NM":"Sputter_ENDURA - 1","PHOTO_SKEY":"271","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":266,"EQUIP_SKEY":486,"KOR_NM":"물리증착장치(스퍼터)- II","ENG_NM":"Sputter_ENDURA - 2","PHOTO_SKEY":"270","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":269,"EQUIP_SKEY":483,"KOR_NM":"박막두께측정기","ENG_NM":"Spectroscopic Ellipsometer","PHOTO_SKEY":"273","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":175,"EQUIP_SKEY":400,"KOR_NM":"비접촉 3D 형상측정기","ENG_NM":"3D Conforcal Scanning Microscope (3DCSM)","PHOTO_SKEY":"177","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":216,"EQUIP_SKEY":416,"KOR_NM":"산화막 식각장치","ENG_NM":"Dry Etcher_Oxide","PHOTO_SKEY":"220","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":208,"EQUIP_SKEY":408,"KOR_NM":"선폭\u0026표면 측정장치","ENG_NM":"CD\u0026Surface inspection system","PHOTO_SKEY":"212","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":262,"EQUIP_SKEY":490,"KOR_NM":"세정 및 에칭장치","ENG_NM":"Wet Station_Acid - 1","PHOTO_SKEY":"266","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":265,"EQUIP_SKEY":487,"KOR_NM":"스트레스측정시스템","ENG_NM":"Stress Measurement System","PHOTO_SKEY":"269","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":268,"EQUIP_SKEY":484,"KOR_NM":"스핀건조기","ENG_NM":"Spin Rinse Dryer","PHOTO_SKEY":"272","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":260,"EQUIP_SKEY":492,"KOR_NM":"습식현상","ENG_NM":"Wet Station_Organic","PHOTO_SKEY":"264","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":272,"EQUIP_SKEY":475,"KOR_NM":"실리사이드용 급속열처리기","ENG_NM":"RTP for Silicide","PHOTO_SKEY":"276","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":213,"EQUIP_SKEY":413,"KOR_NM":"실리콘 고종횡비 식각장치 - 2","ENG_NM":"Deep Reactive Ion Etcher(DRIE) - 2","PHOTO_SKEY":"217","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1034,"KOR_NM":"알파스텝(ME)","ENG_NM":"Alpha-Step (ME)","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":246,"EQUIP_SKEY":429,"KOR_NM":"열처리 장비","ENG_NM":"Furnace Metal Anneal","PHOTO_SKEY":"250","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":201,"EQUIP_SKEY":405,"KOR_NM":"원자층증착장치","ENG_NM":"Atomic Layer Deposition (ALD)","PHOTO_SKEY":"204","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1032,"KOR_NM":"웨이퍼 마커","ENG_NM":"Wafer Laser Marker","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":212,"EQUIP_SKEY":412,"KOR_NM":"이온실리콘식각장치","ENG_NM":"Deep Reactive Ion Etcher(DRIE) - 1","PHOTO_SKEY":"216","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":209,"EQUIP_SKEY":409,"KOR_NM":"임계치수 측정 주사현미경","ENG_NM":"CD-SEM","PHOTO_SKEY":"213","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3289,"EQUIP_SKEY":467,"KOR_NM":"자외선 트렉 시스템","ENG_NM":"PR Track_DAVID","PHOTO_SKEY":"283","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":231,"EQUIP_SKEY":445,"KOR_NM":"저압 화학증착장치","ENG_NM":"LP-CVD","PHOTO_SKEY":"235","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":241,"EQUIP_SKEY":433,"KOR_NM":"전계 방출형 주사전자현미경","ENG_NM":"[Hitachi S-4800] High Resolution FE-SEM- Ⅲ","PHOTO_SKEY":"245","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":301,"EQUIP_SKEY":434,"KOR_NM":"전계 방출형 주사전자현미경","ENG_NM":"[JSM 7800F PRIME with Dual EDS] High Resolution FE-SEM-Ⅱ","PHOTO_SKEY":"303","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":240,"EQUIP_SKEY":435,"KOR_NM":"전계 방출형 주사전자현미경","ENG_NM":"[JSM 7401F] High Resolution FE-SEM-I","PHOTO_SKEY":"244","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":239,"EQUIP_SKEY":436,"KOR_NM":"전계방출전자현미경","ENG_NM":"HR FE-SEM (in Clean Room)","PHOTO_SKEY":"243","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":299,"EQUIP_SKEY":420,"KOR_NM":"전자빔 증착장비","ENG_NM":"E-beam Evaporator-2","PHOTO_SKEY":"301","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":300,"EQUIP_SKEY":421,"KOR_NM":"전자빔리소그래피시스템-1","ENG_NM":"E-Beam Lithography System - 1","PHOTO_SKEY":"302","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3279,"EQUIP_SKEY":422,"KOR_NM":"전자빔리소그래픽시스템-2","ENG_NM":"E-Beam Lithography System - 2","PHOTO_SKEY":"224","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":219,"EQUIP_SKEY":419,"KOR_NM":"전자빔증착기-1","ENG_NM":"E-Beam Evaporator - 1","PHOTO_SKEY":"223","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":214,"EQUIP_SKEY":414,"KOR_NM":"절연막건식 식각 장비","ENG_NM":"Dry Etcher - TEL","PHOTO_SKEY":"218","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":264,"EQUIP_SKEY":488,"KOR_NM":"초고진공화학기상증착기","ENG_NM":"UHV-CVD","PHOTO_SKEY":"268","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":210,"EQUIP_SKEY":410,"KOR_NM":"커브트레이서 및 프로브 스테이션","ENG_NM":"Curve Tracer \u0026 Probe Station","PHOTO_SKEY":"214","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3282,"EQUIP_SKEY":471,"KOR_NM":"트렉 시스템-I","ENG_NM":"PR Track_TEL - 1","PHOTO_SKEY":"279","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":274,"EQUIP_SKEY":472,"KOR_NM":"프로브스테이션_파워반도체(소자)","ENG_NM":"Probe Station_Power Semiconductor","PHOTO_SKEY":"278","EQ_ROOM_SKEY":37,"FEATURE":"I-V, C-V 등 측정","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":215,"EQUIP_SKEY":415,"KOR_NM":"플라즈마 유도결합 식각장치","ENG_NM":"Dry Etcher_DMS","PHOTO_SKEY":"219","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":288,"EQUIP_SKEY":459,"KOR_NM":"플라즈마증착장치 - P5000","ENG_NM":"PE-CVD - P5000","PHOTO_SKEY":"292","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":285,"EQUIP_SKEY":462,"KOR_NM":"플라즈마증착장치-1","ENG_NM":"PE-CVD-1","PHOTO_SKEY":"289","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":284,"EQUIP_SKEY":463,"KOR_NM":"플라즈마증착장치-2","ENG_NM":"PE-CVD-2","PHOTO_SKEY":"288","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":261,"EQUIP_SKEY":491,"KOR_NM":"확산로 Parts","ENG_NM":"Wet Station_Acid - 2","PHOTO_SKEY":"265","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3165,"EQUIP_SKEY":1745,"KOR_NM":"AP-CVD","ENG_NM":"AP-CVD","PHOTO_SKEY":"3228","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1634,"KOR_NM":"Atomic Force Microscope-Ⅰ(D 3100) / AFM-Ⅰ","ENG_NM":"Atomic Force Microscope-Ⅰ(D 3100) / AFM-Ⅰ","EQ_ROOM_SKEY":37},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1035,"KOR_NM":"Atomic Force Microscope-Ⅱ(Jupiter XR) / AFM - Ⅱ","ENG_NM":"Atomic Force Microscope-Ⅱ(Jupiter XR) / AFM - Ⅱ","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1635,"KOR_NM":"Cutting/Grinding/Polishing System","ENG_NM":"Cutting/Grinding/Polishing System","EQ_ROOM_SKEY":37},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":211,"EQUIP_SKEY":411,"KOR_NM":"DC\u0026RF 물리증착장비","ENG_NM":"DC\u0026RF Sputtering system","PHOTO_SKEY":"215","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3624,"EQUIP_SKEY":1746,"KOR_NM":"Dry-Etcher_gigalane","ENG_NM":"Dry-Etcher_gigalane","PHOTO_SKEY":"3718","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":221,"EQUIP_SKEY":423,"KOR_NM":"Focused Ion Beam -Ⅰ(Helios 600 with TKD) / FIB -Ⅰ","ENG_NM":"Focused Ion Beam -Ⅰ(Helios 600 with TKD) / FIB -Ⅰ","PHOTO_SKEY":"225","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":222,"EQUIP_SKEY":424,"KOR_NM":"Focused Ion Beam -Ⅱ(Helios 650 with EBSD) / FIB -Ⅱ","ENG_NM":"Focused Ion Beam -Ⅱ(Helios 650 with EBSD) / FIB -Ⅱ","PHOTO_SKEY":"226","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":224,"EQUIP_SKEY":426,"KOR_NM":"Focused Ion Beam -Ⅲ(Helios G3 CX) / FIB -Ⅲ","ENG_NM":"Focused Ion Beam -Ⅲ(Helios G3 CX) / FIB -Ⅲ","PHOTO_SKEY":"228","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":225,"EQUIP_SKEY":427,"KOR_NM":"Focused Ion Beam -Ⅳ(SMI 3050) / FIB - Ⅳ","ENG_NM":"Focused Ion Beam -Ⅳ(SMI 3050) / FIB - Ⅳ","PHOTO_SKEY":"229","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":4278,"EQUIP_SKEY":1638,"KOR_NM":"Furnace Activator_SiC 200","ENG_NM":"Furnace Activator_SiC 200","PHOTO_SKEY":"4391","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":218,"EQUIP_SKEY":418,"KOR_NM":"ICP 식각 장치 - 2","ENG_NM":"Dry-Etcher_Ulvac","PHOTO_SKEY":"222","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1026,"KOR_NM":"ICP 식각장치","ENG_NM":"Dry Etcher_ICP","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1636,"KOR_NM":"Ion Beam Thinner","ENG_NM":"Ion Beam Thinner","EQ_ROOM_SKEY":37},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":2426,"EQUIP_SKEY":1627,"KOR_NM":"LPCVD Furnace","ENG_NM":"LPCVD Furnace","PHOTO_SKEY":"2486","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3287,"EQUIP_SKEY":1031,"KOR_NM":"Mask Aligner_ME","ENG_NM":"Mask Aligner_ME","PHOTO_SKEY":"3344","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":302,"EQUIP_SKEY":449,"KOR_NM":"Metal Lift-Off","ENG_NM":"Metal Lift-Off","PHOTO_SKEY":"304","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":248,"EQUIP_SKEY":450,"KOR_NM":"NEMS 제작을 위한 Base System","ENG_NM":"NEMS White Wet station - Organic","PHOTO_SKEY":"251","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1033,"KOR_NM":"NEMS 제작을 위한 Base System","ENG_NM":"NEMS Base System (optical microscope)","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1027,"KOR_NM":"NEMS 제작을 위한 Base System","ENG_NM":"NEMS White Wet station - Acid","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":3288,"EQUIP_SKEY":1061,"KOR_NM":"NEMS Spin Coater","ENG_NM":"NEMS Spin Coater","PHOTO_SKEY":"2261","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":247,"EQUIP_SKEY":451,"KOR_NM":"NEMS Yellow Wet station - Acid","ENG_NM":"NEMS Yellow Wet station - Acid","PHOTO_SKEY":"252","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":249,"EQUIP_SKEY":452,"KOR_NM":"NEMS Yellow Wet station - Organic","ENG_NM":"NEMS Yellow Wet station - Organic","PHOTO_SKEY":"253","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":251,"EQUIP_SKEY":453,"KOR_NM":"OLED 증착장비(200x200 glass)","ENG_NM":"OLED Systems","PHOTO_SKEY":"255","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":286,"EQUIP_SKEY":461,"KOR_NM":"PECVD System P-5000","ENG_NM":"PECVD System P-5000","PHOTO_SKEY":"290","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1030,"KOR_NM":"PR Spin Coater_Sawatec","ENG_NM":"PR Spin Coater_Sawatec","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":473,"KOR_NM":"PZT 박막스퍼터링 시스템","ENG_NM":"PZT sputtering","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":2812,"EQUIP_SKEY":1694,"KOR_NM":"Raman Spectroscopy(Alpha 300 R)","ENG_NM":"Raman Spectroscopy(Alpha 300 R)","PHOTO_SKEY":"2867","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1029,"KOR_NM":"Sputter (OLED)","ENG_NM":"Sputter (OLED)","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1028,"KOR_NM":"Surface Potential Measurement System","ENG_NM":"Surface Potential Measurement System","PHOTO_SKEY":"","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"FILE_SKEY":259,"EQUIP_SKEY":493,"KOR_NM":"Wet Station_Acid - Metal","ENG_NM":"Wet Station_Acid - Metal","PHOTO_SKEY":"263","EQ_ROOM_SKEY":37,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노융합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1637,"KOR_NM":"Wet Station_Pre Clean","ENG_NM":"Wet Station_Pre Clean","EQ_ROOM_SKEY":37},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1252,"EQUIP_SKEY":942,"KOR_NM":"200 kV 전계방출형 투과전자현미경","ENG_NM":"FE-TEM (200 kV)","PHOTO_SKEY":"1244","EQ_ROOM_SKEY":50,"FEATURE":"200 kV 전계방출형 투과전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1307,"EQUIP_SKEY":867,"KOR_NM":"200mm 다중 챔버 원자층 증착 시스템","ENG_NM":"200mm Multi Chamber Atomic Layer Deposition System","PHOTO_SKEY":"1299","EQ_ROOM_SKEY":50,"FEATURE":"200mm 다중 챔버 원자층 증착 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1394,"EQUIP_SKEY":897,"KOR_NM":"2D Materials (가상)","ENG_NM":"2D Materials (가상)","PHOTO_SKEY":"1387","EQ_ROOM_SKEY":50,"FEATURE":"2D Materials (가상)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1379,"EQUIP_SKEY":797,"KOR_NM":"300mm 두께 측정 장비","ENG_NM":"300mm Thickness Measurement System","PHOTO_SKEY":"1372","EQ_ROOM_SKEY":50,"FEATURE":"300mm 두께 측정 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1347,"EQUIP_SKEY":796,"KOR_NM":"300mm 매엽식 세정 장치 ","ENG_NM":"300mm Single cleaner","PHOTO_SKEY":"1339","EQ_ROOM_SKEY":50,"FEATURE":"300mm 매엽식 세정 장치 "},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1378,"EQUIP_SKEY":883,"KOR_NM":"300mm 웨이퍼 분류장치","ENG_NM":"Wafer Sorter","PHOTO_SKEY":"1371","EQ_ROOM_SKEY":50,"FEATURE":"300mm 웨이퍼 분류장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1377,"EQUIP_SKEY":910,"KOR_NM":"300mm 웨이퍼 분류장치","ENG_NM":"Wafer Sorter","PHOTO_SKEY":"1370","EQ_ROOM_SKEY":50,"FEATURE":"300mm 웨이퍼 분류장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1407,"EQUIP_SKEY":911,"KOR_NM":"300mm용 주사탐침현미경","ENG_NM":"AFM (300mm Wafer)","PHOTO_SKEY":"1400","EQ_ROOM_SKEY":50,"FEATURE":"300mm용 주사탐침현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":817,"KOR_NM":"300mmm 금속증착 장비","ENG_NM":"Sputter","EQ_ROOM_SKEY":50,"FEATURE":"300mmm 금속증착 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1445,"EQUIP_SKEY":828,"KOR_NM":"3차원 가상 공정 시뮬레이터","ENG_NM":"Simulator3D","PHOTO_SKEY":"1501","EQ_ROOM_SKEY":50,"FEATURE":"3차원 가상 공정 시뮬레이터","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1243,"EQUIP_SKEY":887,"KOR_NM":"8인치/12인치 웨이퍼 레벨 금속 오염 분석기","ENG_NM":"VPD-ICPMS","PHOTO_SKEY":"1235","EQ_ROOM_SKEY":50,"FEATURE":"NIM10","FEATURE_ENG":"- High throughput: \u003e 3 WPH(6 WPH for expended model)\n- Etch rate : \u003e 30 nm/min\n- Nexion 2000 ICPMS(or higher, Perkin Elmer)\n- Auto-calibration linearity: \u003e 99.5 up to 34 species\n- Ultralow detection limit(\u003c0.05 ~ 1 ppb, 10^8 ~ 10^9 atoms/cm2\n- Auto preparation of chemical solutions"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":837,"KOR_NM":"가변 레이저 시스템","ENG_NM":"가변 레이저 시스템","EQ_ROOM_SKEY":50,"FEATURE":"가변 레이저 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1343,"EQUIP_SKEY":794,"KOR_NM":"감광제 제거 장비","ENG_NM":"300mm PR Stripper","PHOTO_SKEY":"1335","EQ_ROOM_SKEY":50,"FEATURE":"감광제 제거 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1276,"EQUIP_SKEY":822,"KOR_NM":"감광제 제거장치","ENG_NM":"PR Stripper","PHOTO_SKEY":"1268","EQ_ROOM_SKEY":50,"FEATURE":"감광제 제거장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1391,"EQUIP_SKEY":994,"KOR_NM":"감광제 제거장치","ENG_NM":"PR Stripper","PHOTO_SKEY":"1384","EQ_ROOM_SKEY":50,"FEATURE":"감광제 제거장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1277,"EQUIP_SKEY":999,"KOR_NM":"감광제 제거장치","ENG_NM":"PR Stripper","PHOTO_SKEY":"1269","EQ_ROOM_SKEY":50,"FEATURE":"감광제 제거장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1346,"EQUIP_SKEY":793,"KOR_NM":"건식 식각 장치","ENG_NM":"Dry etch","PHOTO_SKEY":"1338","EQ_ROOM_SKEY":50,"FEATURE":"건식 식각 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1271,"EQUIP_SKEY":928,"KOR_NM":"겔투과 크로마토그래피","ENG_NM":"GPC","PHOTO_SKEY":"1263","EQ_ROOM_SKEY":50,"FEATURE":"겔투과 크로마토그래피"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1261,"EQUIP_SKEY":976,"KOR_NM":"고면저항 측정기","ENG_NM":"(CMOS) 4-Point Probe","PHOTO_SKEY":"1253","EQ_ROOM_SKEY":50,"FEATURE":"고면저항 측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1211,"EQUIP_SKEY":835,"KOR_NM":"고밀도플라스마 화학기상 증착장치","ENG_NM":"HDPCVD(STI,FSG)","PHOTO_SKEY":"1203","EQ_ROOM_SKEY":50,"FEATURE":"고밀도 플라즈마 화학기상증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1392,"EQUIP_SKEY":914,"KOR_NM":"고분해능 전계방사형 주사전자현미경","ENG_NM":"Inline FE-SEM","PHOTO_SKEY":"1385","EQ_ROOM_SKEY":50,"FEATURE":"고분해능 전계방사형 주사전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1423,"EQUIP_SKEY":894,"KOR_NM":"고분해능 전계방출형 주사전자현미경","ENG_NM":"UHR FE-SEM","PHOTO_SKEY":"1416","EQ_ROOM_SKEY":50,"FEATURE":"고분해능 전계방출형 주사전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1328,"EQUIP_SKEY":792,"KOR_NM":"고성능 유세포 측정분석기","ENG_NM":"High Performance Flow Cytometer","PHOTO_SKEY":"1320","EQ_ROOM_SKEY":50,"FEATURE":"고성능 유세포 측정분석기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1338,"EQUIP_SKEY":1021,"KOR_NM":"고속 회전 절삭기","ENG_NM":"Dicing machine","PHOTO_SKEY":"1330","EQ_ROOM_SKEY":50,"FEATURE":"고속 회전 절삭기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1337,"EQUIP_SKEY":1022,"KOR_NM":"고속 회전 절삭기","ENG_NM":"Dicing Sawing Maching \u0026 spin dryer","PHOTO_SKEY":"1329","EQ_ROOM_SKEY":50,"FEATURE":"고속 회전 절삭기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1397,"EQUIP_SKEY":896,"KOR_NM":"고속원심분리기","ENG_NM":"Centrifuge","PHOTO_SKEY":"1390","EQ_ROOM_SKEY":50,"FEATURE":"고속원심분리기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1303,"EQUIP_SKEY":780,"KOR_NM":"고에너지 이온주입장치","ENG_NM":"High energy implant","PHOTO_SKEY":"1295","EQ_ROOM_SKEY":50,"FEATURE":"고에너지 이온주입장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1305,"EQUIP_SKEY":1004,"KOR_NM":"고온 열처리 확산로","ENG_NM":"Furnace (High Temp Ox)","PHOTO_SKEY":"1297","EQ_ROOM_SKEY":50,"FEATURE":"고온 열처리 확산로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1304,"EQUIP_SKEY":779,"KOR_NM":"고전류 이온주입장치","ENG_NM":"High current Ion Implanter","PHOTO_SKEY":"1296","EQ_ROOM_SKEY":50,"FEATURE":"고전류 이온주입장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1278,"EQUIP_SKEY":807,"KOR_NM":"고종횡비 산화막 건식식각장치","ENG_NM":"HAR Dielectric Etcher","PHOTO_SKEY":"1270","EQ_ROOM_SKEY":50,"FEATURE":"고종횡비 산화막 건식식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1282,"EQUIP_SKEY":789,"KOR_NM":"고종횡비 실리콘 식각 장비","ENG_NM":"Deep Si Etcher","PHOTO_SKEY":"1274","EQ_ROOM_SKEY":50,"FEATURE":"고종횡비 실리콘 식각 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1331,"EQUIP_SKEY":981,"KOR_NM":"고진공 웨이퍼 본딩장치","ENG_NM":"High vacuum wafer bonding system","PHOTO_SKEY":"1323","EQ_ROOM_SKEY":50,"FEATURE":"고진공 웨이퍼 본딩장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1218,"EQUIP_SKEY":830,"KOR_NM":"고진공 패키징 장치","ENG_NM":"High Vacuum Sealing system","PHOTO_SKEY":"1210","EQ_ROOM_SKEY":50,"FEATURE":"고진공 패키징 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1321,"EQUIP_SKEY":923,"KOR_NM":"공초점 레이저 주사 현미경","ENG_NM":"Confocal Laser Scanning Microscope","PHOTO_SKEY":"1313","EQ_ROOM_SKEY":50,"FEATURE":"공초점 레이저 주사 현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":784,"KOR_NM":"구리용 스퍼터","ENG_NM":"CMOS Sputter - Ti/TiN/Co/Al","EQ_ROOM_SKEY":50,"FEATURE":"구리용 스퍼터"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1251,"EQUIP_SKEY":943,"KOR_NM":"구면수차보정 주사투과전자현미경","ENG_NM":"Cs-corrected STEM","PHOTO_SKEY":"1243","EQ_ROOM_SKEY":50,"FEATURE":"구면수차보정 주사투과전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1758,"KOR_NM":"구면수차보정 투과전자현미경","ENG_NM":"In situ TEM","EQ_ROOM_SKEY":50,"FEATURE":"구면수차보정 투과전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1405,"EQUIP_SKEY":982,"KOR_NM":"극자외선축소투영노광시스템","ENG_NM":"KrF Inline Scanner","PHOTO_SKEY":"1398","EQ_ROOM_SKEY":50,"FEATURE":"극자외선축소투영노광시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1264,"EQUIP_SKEY":798,"KOR_NM":"극자외선축소투영노광시스템","ENG_NM":"KrF inline Scanner","PHOTO_SKEY":"1256","EQ_ROOM_SKEY":50,"FEATURE":"극자외선축소투영노광시스템","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":880,"KOR_NM":"근적외석 카메라","ENG_NM":"Photonics SWIR Camera","EQ_ROOM_SKEY":50,"FEATURE":"근적외석 카메라"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1272,"EQUIP_SKEY":966,"KOR_NM":"글러브박스","ENG_NM":"Glove Box","PHOTO_SKEY":"1264","EQ_ROOM_SKEY":50,"FEATURE":"글러브박스"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":804,"KOR_NM":"금속 식각 장비","ENG_NM":"Metal Etching System","EQ_ROOM_SKEY":50,"FEATURE":"금속 식각 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1280,"EQUIP_SKEY":1002,"KOR_NM":"금속 식각장치","ENG_NM":"Metal Etcher - Al,Ti,TiN","PHOTO_SKEY":"1272","EQ_ROOM_SKEY":50,"FEATURE":"금속 식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1387,"EQUIP_SKEY":932,"KOR_NM":"급속 열처리장치","ENG_NM":"Spike RTP system","PHOTO_SKEY":"1380","EQ_ROOM_SKEY":50,"FEATURE":"급속 열처리장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1291,"EQUIP_SKEY":785,"KOR_NM":"급속 열처리장치","ENG_NM":"RTP system","PHOTO_SKEY":"1283","EQ_ROOM_SKEY":50,"FEATURE":"급속 열처리장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1292,"EQUIP_SKEY":781,"KOR_NM":"급속 열처리장치","ENG_NM":"RTP system","PHOTO_SKEY":"1284","EQ_ROOM_SKEY":50,"FEATURE":"급속 열처리장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1290,"EQUIP_SKEY":782,"KOR_NM":"급속 열처리장치","ENG_NM":"RTP system (Metal grade RTP)","PHOTO_SKEY":"1282","EQ_ROOM_SKEY":50,"FEATURE":"급속 열처리장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1311,"EQUIP_SKEY":884,"KOR_NM":"나노구조 캐스팅 장치","ENG_NM":"nanostructure casting","PHOTO_SKEY":"1303","EQ_ROOM_SKEY":50,"FEATURE":"나노구조 캐스팅 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1417,"EQUIP_SKEY":953,"KOR_NM":"나노압입시험기","ENG_NM":"Nanoindentation Tester","PHOTO_SKEY":"1410","EQ_ROOM_SKEY":50,"FEATURE":"나노압입시험기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1691,"KOR_NM":"나노압입시험기","ENG_NM":"Nanoindentation Tester","EQ_ROOM_SKEY":50,"FEATURE":"나노압입시험기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1326,"EQUIP_SKEY":859,"KOR_NM":"나노폴리머 기상증착기","ENG_NM":"i-CVD","PHOTO_SKEY":"1318","EQ_ROOM_SKEY":50,"FEATURE":"나노폴리머 기상증착기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1312,"EQUIP_SKEY":907,"KOR_NM":"나노폴리머 캐스팅 장비","ENG_NM":"Nano Polymer Casting Machine","PHOTO_SKEY":"1304","EQ_ROOM_SKEY":50,"FEATURE":"나노폴리머 캐스팅 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1249,"EQUIP_SKEY":882,"KOR_NM":"다기능 엑스선 광전자 분광기","ENG_NM":"Multi-Functional XPS","PHOTO_SKEY":"1241","EQ_ROOM_SKEY":50,"FEATURE":"다기능 엑스선 광전자 분광기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1438,"EQUIP_SKEY":972,"KOR_NM":"다중물리센서 설계 소프트웨어","ENG_NM":"MEMS Process Design Kit (Coventorware)","PHOTO_SKEY":"1431","EQ_ROOM_SKEY":50,"FEATURE":"다중물리센서 설계 소프트웨어"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1444,"EQUIP_SKEY":836,"KOR_NM":"다중챔버 플라스마 화학기상 증착장치","ENG_NM":"Multi Chamber PECVD(TEOS,BPSG,ACL)","PHOTO_SKEY":"1500","EQ_ROOM_SKEY":50,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1225,"EQUIP_SKEY":977,"KOR_NM":"다중타겟 스퍼터","ENG_NM":"Multi-Sputter","PHOTO_SKEY":"1217","EQ_ROOM_SKEY":50,"FEATURE":"다중타겟 스퍼터"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1224,"EQUIP_SKEY":905,"KOR_NM":"다중타겟 스퍼터","ENG_NM":"Multi-target sputter","PHOTO_SKEY":"1216","EQ_ROOM_SKEY":50,"FEATURE":"다중타겟 스퍼터","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1226,"EQUIP_SKEY":1018,"KOR_NM":"다중타겟 스퍼터","ENG_NM":"NEMS - Multi Target Sputter","PHOTO_SKEY":"1218","EQ_ROOM_SKEY":50,"FEATURE":"다중타겟 스퍼터"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1395,"EQUIP_SKEY":842,"KOR_NM":"단광자 검출기","ENG_NM":"Superconducting Nanowire Single Photon Detector","PHOTO_SKEY":"1388","EQ_ROOM_SKEY":50,"FEATURE":"단광자 검출기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1340,"EQUIP_SKEY":819,"KOR_NM":"대기압 플라즈마처리","ENG_NM":"Plasma Treatmet System","PHOTO_SKEY":"1332","EQ_ROOM_SKEY":50,"FEATURE":"대기압 플라즈마처리"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1759,"KOR_NM":"대면적이온밀링시스템","ENG_NM":"Ion Milling System","EQ_ROOM_SKEY":50,"FEATURE":"대면적이온밀링시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1412,"EQUIP_SKEY":930,"KOR_NM":"듀얼집속이온빔장치","ENG_NM":"DB-FIB","PHOTO_SKEY":"1405","EQ_ROOM_SKEY":50,"FEATURE":"듀얼집속이온빔장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1416,"EQUIP_SKEY":945,"KOR_NM":"듀얼집속이온빔장치","ENG_NM":"8-inch DB-FIB (EDS)","PHOTO_SKEY":"1409","EQ_ROOM_SKEY":50,"FEATURE":"듀얼집속이온빔장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1410,"EQUIP_SKEY":947,"KOR_NM":"듀얼집속이온빔장치","ENG_NM":"DB-FIB","PHOTO_SKEY":"1403","EQ_ROOM_SKEY":50,"FEATURE":"듀얼집속이온빔장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1257,"EQUIP_SKEY":809,"KOR_NM":"라만 분광기","ENG_NM":"Raman Spectrometer","PHOTO_SKEY":"1249","EQ_ROOM_SKEY":50,"FEATURE":"라만 분광기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1384,"EQUIP_SKEY":877,"KOR_NM":"레이저 마이크로 시스템","ENG_NM":"Laser Micromachining System","PHOTO_SKEY":"1377","EQ_ROOM_SKEY":50,"FEATURE":"레이저 마이크로 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1383,"EQUIP_SKEY":918,"KOR_NM":"레이저 마킹장치","ENG_NM":"Laser Source Marking","PHOTO_SKEY":"1376","EQ_ROOM_SKEY":50,"FEATURE":"레이저 마킹장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1301,"EQUIP_SKEY":856,"KOR_NM":"레이저 어닐장치","ENG_NM":"Laser Anneal system","PHOTO_SKEY":"1293","EQ_ROOM_SKEY":50,"FEATURE":"레이저 어닐장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1239,"EQUIP_SKEY":1001,"KOR_NM":"마스크 세정장치","ENG_NM":"Mask Cleaner","PHOTO_SKEY":"1231","EQ_ROOM_SKEY":50,"FEATURE":"마스크 세정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1752,"KOR_NM":"마스크 제작","ENG_NM":"Maskless aligner","EQ_ROOM_SKEY":50,"FEATURE":"마스크 제작"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1756,"KOR_NM":"마스크리스 얼라이너","ENG_NM":"Maskless Aligner","EQ_ROOM_SKEY":50,"FEATURE":"마스크리스 얼라이너"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1324,"EQUIP_SKEY":802,"KOR_NM":"마이크로 전극성형기","ENG_NM":"Micro electrode patterning system","PHOTO_SKEY":"1316","EQ_ROOM_SKEY":50,"FEATURE":"마이크로 전극성형기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1408,"EQUIP_SKEY":898,"KOR_NM":"마이크로 클리빙 장치","ENG_NM":"Micro Cleaving System","PHOTO_SKEY":"1401","EQ_ROOM_SKEY":50,"FEATURE":"마이크로 클리빙 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1323,"EQUIP_SKEY":801,"KOR_NM":"마이크로 패터닝 시스템","ENG_NM":"Micro patterning system","PHOTO_SKEY":"1315","EQ_ROOM_SKEY":50,"FEATURE":"마이크로 패터닝 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1308,"EQUIP_SKEY":813,"KOR_NM":"만능재료 시험기","ENG_NM":"Universal Testing Machine","PHOTO_SKEY":"1300","EQ_ROOM_SKEY":50,"FEATURE":"만능재료 시험기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1259,"EQUIP_SKEY":954,"KOR_NM":"매뉴얼 프로브 스테이션","ENG_NM":"Manual Probe Station","PHOTO_SKEY":"1251","EQ_ROOM_SKEY":50,"FEATURE":"매뉴얼 프로브 스테이션"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1281,"EQUIP_SKEY":995,"KOR_NM":"멀티챔버 식각장치","ENG_NM":"Metal Etcher - Al,Ti,TiN,W","PHOTO_SKEY":"1273","EQ_ROOM_SKEY":50,"FEATURE":"멀티챔버 식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1228,"EQUIP_SKEY":998,"KOR_NM":"멤스용 감광제 제거장치","ENG_NM":"PR Stripper - NEMS 전용","PHOTO_SKEY":"1220","EQ_ROOM_SKEY":50,"FEATURE":"멤스용 감광제 제거장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1441,"EQUIP_SKEY":970,"KOR_NM":"멤스용 세정장치","ENG_NM":"Wet Station - NEMS Acid","PHOTO_SKEY":"1434","EQ_ROOM_SKEY":50,"FEATURE":"멤스용 세정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1451,"EQUIP_SKEY":971,"KOR_NM":"멤스용 세정장치","ENG_NM":"Wet Station - NEMS Solvent","PHOTO_SKEY":"1507","EQ_ROOM_SKEY":50,"FEATURE":"멤스용 세정장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1235,"EQUIP_SKEY":1011,"KOR_NM":"멤스용 열처리 확산로","ENG_NM":"NEMS - Furnace","PHOTO_SKEY":"1227","EQ_ROOM_SKEY":50,"FEATURE":"멤스용 열처리 확산로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1234,"EQUIP_SKEY":824,"KOR_NM":"멤스용 열처리 확산로","ENG_NM":"MEMS Furnace","PHOTO_SKEY":"1226","EQ_ROOM_SKEY":50,"FEATURE":"Process\n Wet oxidation\n Dry oxidation\n N2 anneal\nProcess range : 50Å ~ 2um\nProcess temp\n High temp : 600℃ ~ 1100℃\n Low temp : 200℃~ 600℃\nGas : N2, O2, H2, N2O\nOxidation Non-uniformity ≤ 2 %","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1229,"EQUIP_SKEY":1012,"KOR_NM":"멤스용 저압화학기상 증착로","ENG_NM":"Poly Furnace","PHOTO_SKEY":"1221","EQ_ROOM_SKEY":50,"FEATURE":"멤스용 저압화학기상 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1241,"EQUIP_SKEY":1009,"KOR_NM":"멤스용 저온 열처리로","ENG_NM":"NEMS - Low Temp Anneal Furnace","PHOTO_SKEY":"1233","EQ_ROOM_SKEY":50,"FEATURE":"멤스용 저온 열처리로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1232,"EQUIP_SKEY":893,"KOR_NM":"멤스용 화학기상 증착장치","ENG_NM":"MEMS PETOS","PHOTO_SKEY":"1224","EQ_ROOM_SKEY":50,"FEATURE":"멤스용 화학기상 증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1231,"EQUIP_SKEY":862,"KOR_NM":"멤스용 화학기상 증착장치","ENG_NM":"Multiple PECVD","PHOTO_SKEY":"1223","EQ_ROOM_SKEY":50,"FEATURE":"멤스용 화학기상 증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1414,"EQUIP_SKEY":846,"KOR_NM":"면저항 측정기","ENG_NM":"(Sensor) 4-point Probe","PHOTO_SKEY":"1407","EQ_ROOM_SKEY":50,"FEATURE":"면저항 측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1413,"EQUIP_SKEY":938,"KOR_NM":"면저항 측정기","ENG_NM":"(NEMS) 4-point Probe","PHOTO_SKEY":"1406","EQ_ROOM_SKEY":50,"FEATURE":"면저항 측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1381,"EQUIP_SKEY":873,"KOR_NM":"미세유체 특성평가 시스템","ENG_NM":"Microfluidic performance analyzer","PHOTO_SKEY":"1374","EQ_ROOM_SKEY":50,"FEATURE":"미세유체 특성평가 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1313,"EQUIP_SKEY":843,"KOR_NM":"바이+A55+D55","ENG_NM":"BiO Spin Coater","PHOTO_SKEY":"1305","EQ_ROOM_SKEY":50,"FEATURE":"바이오 스핀 코터"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1217,"EQUIP_SKEY":805,"KOR_NM":"반도체 기판의 휨 측정 장비","ENG_NM":"Wafer Warpage Measuring System","PHOTO_SKEY":"1209","EQ_ROOM_SKEY":50,"FEATURE":"반도체 기판의 휨 측정 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1222,"EQUIP_SKEY":865,"KOR_NM":"반자동 진공 프로브스테이션","ENG_NM":"Semi-auto Vacuum Probe Station","PHOTO_SKEY":"1214","EQ_ROOM_SKEY":50,"FEATURE":"반자동 진공 프로브스테이션"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1339,"EQUIP_SKEY":816,"KOR_NM":"복합환경시험기","ENG_NM":"Complex Environment Tester","PHOTO_SKEY":"1331","EQ_ROOM_SKEY":50,"FEATURE":"복합환경시험기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1432,"EQUIP_SKEY":937,"KOR_NM":"분광 반사 및 타원해석기","ENG_NM":"Auto Thickness Measurement System","PHOTO_SKEY":"1425","EQ_ROOM_SKEY":50,"FEATURE":"분광 반사 및 타원해석기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1429,"EQUIP_SKEY":934,"KOR_NM":"분광 반사율 측정기","ENG_NM":"Reflectormeter (Litho)","PHOTO_SKEY":"1422","EQ_ROOM_SKEY":50,"FEATURE":"분광 반사율 측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1430,"EQUIP_SKEY":935,"KOR_NM":"분광 반사율 측정기","ENG_NM":"Reflectormeter (NEMS)","PHOTO_SKEY":"1423","EQ_ROOM_SKEY":50,"FEATURE":"분광 반사율 측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1433,"EQUIP_SKEY":916,"KOR_NM":"분광반사율측정기","ENG_NM":"Spectroscopic Reflectometer","PHOTO_SKEY":"1426","EQ_ROOM_SKEY":50,"FEATURE":"분광반사율측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1431,"EQUIP_SKEY":936,"KOR_NM":"분광타원편광해석기","ENG_NM":"Spectroscopic Ellipsometer","PHOTO_SKEY":"1424","EQ_ROOM_SKEY":50,"FEATURE":"분광타원편광해석기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1263,"EQUIP_SKEY":922,"KOR_NM":"불화아르곤 노광기","ENG_NM":"ArF dry scanner","PHOTO_SKEY":"1255","EQ_ROOM_SKEY":50,"FEATURE":"불화아르곤 노광기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1265,"EQUIP_SKEY":908,"KOR_NM":"비파괴 선폭측정 주사현미경","ENG_NM":"CD-SEM","PHOTO_SKEY":"1257","EQ_ROOM_SKEY":50,"FEATURE":"비파괴 선폭측정 주사현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1266,"EQUIP_SKEY":987,"KOR_NM":"비파괴 선폭측정 주사현미경","ENG_NM":"CD SEM","PHOTO_SKEY":"1258","EQ_ROOM_SKEY":50,"FEATURE":"비파괴 선폭측정 주사현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1393,"EQUIP_SKEY":964,"KOR_NM":"비표면적 측정장치","ENG_NM":"BET(surface area analyzer)","PHOTO_SKEY":"1386","EQ_ROOM_SKEY":50,"FEATURE":"비표면적 측정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1275,"EQUIP_SKEY":925,"KOR_NM":"비표면적분석기","ENG_NM":"BET(surface area analyzer)","PHOTO_SKEY":"1267","EQ_ROOM_SKEY":50,"FEATURE":"비표면적분석기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1254,"EQUIP_SKEY":866,"KOR_NM":"비행시간형 이차이온질량분석기","ENG_NM":"Time-of-Flight SIMS","PHOTO_SKEY":"1246","EQ_ROOM_SKEY":50,"FEATURE":"비행시간형 이차이온질량분석기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1279,"EQUIP_SKEY":996,"KOR_NM":"산화물 식각장치","ENG_NM":"Dielectric Etcher - BEOL","PHOTO_SKEY":"1271","EQ_ROOM_SKEY":50,"FEATURE":"산화물 식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1390,"EQUIP_SKEY":992,"KOR_NM":"산화물 식각장치","ENG_NM":"Dielectirc / Poly Etcher","PHOTO_SKEY":"1383","EQ_ROOM_SKEY":50,"FEATURE":"산화물 식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1258,"EQUIP_SKEY":955,"KOR_NM":"세미오토 프로브 스테이션","ENG_NM":"Semi-auto Probe Station","PHOTO_SKEY":"1250","EQ_ROOM_SKEY":50,"FEATURE":"세미오토 프로브 스테이션"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1062,"KOR_NM":"세정 장치","ENG_NM":"Wet cleaning","PHOTO_SKEY":"","EQ_ROOM_SKEY":50,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":957,"KOR_NM":"세정장비","ENG_NM":"Wet Station","EQ_ROOM_SKEY":50,"FEATURE":"세정장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1440,"EQUIP_SKEY":879,"KOR_NM":"센서 특성 평가 수동 시스템","ENG_NM":"Vacuum Probe Station","PHOTO_SKEY":"1433","EQ_ROOM_SKEY":50,"FEATURE":"센서 특성 평가 수동 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1439,"EQUIP_SKEY":901,"KOR_NM":"수동 감광제 도포 및 가열장치","ENG_NM":"Manual Coater","PHOTO_SKEY":"1432","EQ_ROOM_SKEY":50,"FEATURE":"수동 감광제 도포 및 가열장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1442,"EQUIP_SKEY":902,"KOR_NM":"수동 세정장치","ENG_NM":"MEMS Wet Station - Develop","PHOTO_SKEY":"1435","EQ_ROOM_SKEY":50,"FEATURE":"수동 세정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":968,"KOR_NM":"수동 세정장치","ENG_NM":"MEMS Wet Station - Develop","EQ_ROOM_SKEY":50,"FEATURE":"수동 세정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1287,"EQUIP_SKEY":1008,"KOR_NM":"수직형 열처리 확산로","ENG_NM":"Furnace (Vertical Gate)","PHOTO_SKEY":"1279","EQ_ROOM_SKEY":50,"FEATURE":"수직형 열처리 확산로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1402,"EQUIP_SKEY":984,"KOR_NM":"스탭식투영노광장치","ENG_NM":"I-line Stepper","PHOTO_SKEY":"1395","EQ_ROOM_SKEY":50,"FEATURE":"스탭식투영노광장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1403,"EQUIP_SKEY":985,"KOR_NM":"스탭식투영노광장치","ENG_NM":"I-line Stepper","PHOTO_SKEY":"1396","EQ_ROOM_SKEY":50,"FEATURE":"스탭식투영노광장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1335,"EQUIP_SKEY":845,"KOR_NM":"스텔스 레이져 다이싱 장치","ENG_NM":"Stealth Laser Dicer","PHOTO_SKEY":"1327","EQ_ROOM_SKEY":50,"FEATURE":"스텔스 레이져 다이싱 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1268,"EQUIP_SKEY":841,"KOR_NM":"신소재 세정장치","ENG_NM":"신소재 Wet Station","PHOTO_SKEY":"1260","EQ_ROOM_SKEY":50,"FEATURE":"신소재 세정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1283,"EQUIP_SKEY":786,"KOR_NM":"실리콘 건식식각장치","ENG_NM":"Si Micro-machinable etcher","PHOTO_SKEY":"1275","EQ_ROOM_SKEY":50,"FEATURE":"실리콘 건식식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1316,"EQUIP_SKEY":831,"KOR_NM":"실시+A52+D52","ENG_NM":"Real time PCR","PHOTO_SKEY":"1308","EQ_ROOM_SKEY":50,"FEATURE":"실시간 유전자 증폭기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1411,"EQUIP_SKEY":948,"KOR_NM":"싱글집속이온빔장치","ENG_NM":"SB-FIB","PHOTO_SKEY":"1404","EQ_ROOM_SKEY":50,"FEATURE":"싱글집속이온빔장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1246,"EQUIP_SKEY":980,"KOR_NM":"압전물질 건식 식각","ENG_NM":"압전물질 건식 식각","PHOTO_SKEY":"1238","EQ_ROOM_SKEY":50,"FEATURE":"압전물질 건식 식각"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1223,"EQUIP_SKEY":871,"KOR_NM":"압전박막 결정성장 증착장비","ENG_NM":"AlN sputter ","PHOTO_SKEY":"1215","EQ_ROOM_SKEY":50,"FEATURE":"압전박막 결정성장 증착장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1345,"EQUIP_SKEY":850,"KOR_NM":"액침 불화아르곤 엑시머 레이저 노광기","ENG_NM":"ArF Immersion Scanner","PHOTO_SKEY":"1337","EQ_ROOM_SKEY":50,"FEATURE":"액침 불화아르곤 엑시머 레이저 노광기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1435,"EQUIP_SKEY":863,"KOR_NM":"엑스선 광전자 분광기","ENG_NM":"X-ray Photoelectron Spectroscopy","PHOTO_SKEY":"1428","EQ_ROOM_SKEY":50,"FEATURE":"엑스선 광전자 분광기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1250,"EQUIP_SKEY":827,"KOR_NM":"엑스선 회절분석기","ENG_NM":"X-Ray Diffractometer","PHOTO_SKEY":"1242","EQ_ROOM_SKEY":50,"FEATURE":"엑스선 회절분석기","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1380,"EQUIP_SKEY":899,"KOR_NM":"엘라이저 리더","ENG_NM":"Spectrophotometer","PHOTO_SKEY":"1373","EQ_ROOM_SKEY":50,"FEATURE":"엘라이저 리더"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1448,"EQUIP_SKEY":861,"KOR_NM":"연삭용 필름 라미네이션 장치","ENG_NM":"Tape Laminater","PHOTO_SKEY":"1504","EQ_ROOM_SKEY":50,"FEATURE":"연삭용 필름 라미네이션 장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1446,"EQUIP_SKEY":840,"KOR_NM":"연삭용 필름 제거 장치","ENG_NM":"Tape Remover","PHOTO_SKEY":"1502","EQ_ROOM_SKEY":50,"FEATURE":"연삭용 필름 제거 장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1273,"EQUIP_SKEY":808,"KOR_NM":"연속증착식각장치","ENG_NM":"Continuous deposition \u0026 etching equipment","PHOTO_SKEY":"1265","EQ_ROOM_SKEY":50,"FEATURE":"연속증착식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1348,"EQUIP_SKEY":853,"KOR_NM":"열 산화막 성장로","ENG_NM":"Thermal Oxidation Furnace","PHOTO_SKEY":"1340","EQ_ROOM_SKEY":50,"FEATURE":"열 산화막 성장로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1396,"EQUIP_SKEY":927,"KOR_NM":"열중량/시차주사열량 동시 열분석기","ENG_NM":"TGA DSC","PHOTO_SKEY":"1389","EQ_ROOM_SKEY":50,"FEATURE":"열중량/시차주사열량 동시 열분석기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1297,"EQUIP_SKEY":1005,"KOR_NM":"열처리 확산로","ENG_NM":"Furnace (Gate Ox)","PHOTO_SKEY":"1289","EQ_ROOM_SKEY":50,"FEATURE":"열처리 확산로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1296,"EQUIP_SKEY":1006,"KOR_NM":"열처리 확산로","ENG_NM":"Furnace (Any Ox)","PHOTO_SKEY":"1288","EQ_ROOM_SKEY":50,"FEATURE":"열처리 확산로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1295,"EQUIP_SKEY":1007,"KOR_NM":"열처리 확산로","ENG_NM":"Furnace (Metal Ox)","PHOTO_SKEY":"1287","EQ_ROOM_SKEY":50,"FEATURE":"열처리 확산로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1262,"EQUIP_SKEY":958,"KOR_NM":"오토스테이지 광학현미경","ENG_NM":"Auto-stage Microscope","PHOTO_SKEY":"1254","EQ_ROOM_SKEY":50,"FEATURE":"오토스테이지 광학현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1038,"KOR_NM":"온도사이클시험기","ENG_NM":"NEMS Temperature Cycle","EQ_ROOM_SKEY":50,"FEATURE":"온도사이클시험기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1319,"EQUIP_SKEY":885,"KOR_NM":"와이+A49+D49","ENG_NM":"Wire Bonding System","PHOTO_SKEY":"1311","EQ_ROOM_SKEY":50,"FEATURE":"와이어 본딩 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":920,"KOR_NM":"원자 탐침 단층현미경","ENG_NM":"Atom Probe Tomography","EQ_ROOM_SKEY":50,"FEATURE":"원자 탐침 단층현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1260,"EQUIP_SKEY":855,"KOR_NM":"원자층 이온빔 식각장치","ENG_NM":"Atom Layer Ion Beam Delayer(ALIBD)","PHOTO_SKEY":"1252","EQ_ROOM_SKEY":50,"FEATURE":"원자층 이온빔 식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1255,"EQUIP_SKEY":787,"KOR_NM":"웨이퍼 레벨 3차원 비파괴 검사시스템","ENG_NM":"WL 3D SAM","PHOTO_SKEY":"1247","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 레벨 3차원 비파괴 검사시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1220,"EQUIP_SKEY":860,"KOR_NM":"웨이퍼 면취 장치","ENG_NM":"Edge Grinder","PHOTO_SKEY":"1212","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 면취 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1382,"EQUIP_SKEY":875,"KOR_NM":"웨이퍼 본더","ENG_NM":"Multi stack wafer bonder","PHOTO_SKEY":"1375","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 본더"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1286,"EQUIP_SKEY":868,"KOR_NM":"웨이퍼 세정 장비","ENG_NM":"Wet Station - Post Cleaner","PHOTO_SKEY":"1278","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 세정 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1285,"EQUIP_SKEY":888,"KOR_NM":"웨이퍼 세정 장비","ENG_NM":"Non_Metal","PHOTO_SKEY":"1277","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 세정 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1284,"EQUIP_SKEY":889,"KOR_NM":"웨이퍼 세정 장비","ENG_NM":"Metal_Acid","PHOTO_SKEY":"1276","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 세정 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1388,"EQUIP_SKEY":838,"KOR_NM":"웨이퍼 세정 장비","ENG_NM":"Metal_Solvent","PHOTO_SKEY":"1381","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 세정 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1443,"EQUIP_SKEY":823,"KOR_NM":"웨이퍼 연삭 및 연마 장치","ENG_NM":"Back Grinder","PHOTO_SKEY":"1436","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 연삭 및 연마 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1336,"EQUIP_SKEY":892,"KOR_NM":"웨이퍼 절단 장치","ENG_NM":"Dicing Saw","PHOTO_SKEY":"1328","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 절단 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1753,"KOR_NM":"웨이퍼 테이핑 장치","ENG_NM":"Dicing Tape Mounter","EQ_ROOM_SKEY":50,"FEATURE":"웨이퍼 테이핑 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":959,"KOR_NM":"이온반응식각장치","ENG_NM":"RIE","EQ_ROOM_SKEY":50,"FEATURE":"이온반응식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1256,"EQUIP_SKEY":788,"KOR_NM":"이온반응식각장치","ENG_NM":"Reactive Ion Etcher","PHOTO_SKEY":"1248","EQ_ROOM_SKEY":50,"FEATURE":"이온반응식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":864,"KOR_NM":"이온빔 증착기","ENG_NM":"Ion Beam Evaporator","EQ_ROOM_SKEY":50,"FEATURE":"ion Beam Evaporator"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1434,"EQUIP_SKEY":944,"KOR_NM":"이온연마장치","ENG_NM":"TEM - Sample Preparation","PHOTO_SKEY":"1427","EQ_ROOM_SKEY":50,"FEATURE":"이온연마장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1374,"EQUIP_SKEY":852,"KOR_NM":"임계치수 전자주사현미경","ENG_NM":"CD SEM","PHOTO_SKEY":"1367","EQ_ROOM_SKEY":50,"FEATURE":"임계치수 전자주사현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1399,"EQUIP_SKEY":839,"KOR_NM":"임프린트 시스템","ENG_NM":"Nano Imprint Lithography System","PHOTO_SKEY":"1392","EQ_ROOM_SKEY":50,"FEATURE":"임프린트 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1270,"EQUIP_SKEY":965,"KOR_NM":"입도 분석기","ENG_NM":"Particle Size Analyzer","PHOTO_SKEY":"1262","EQ_ROOM_SKEY":50,"FEATURE":"입도 분석기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1427,"EQUIP_SKEY":961,"KOR_NM":"자기섹터 이차 이온 질량분석기","ENG_NM":"Magnetic Sector SIMS","PHOTO_SKEY":"1420","EQ_ROOM_SKEY":50,"FEATURE":"자기섹터 이차 이온 질량분석기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1060,"KOR_NM":"자기섹터 이차 이온 질량분석기","ENG_NM":"Magnetic Sector SIMS(A)","EQ_ROOM_SKEY":50,"FEATURE":"MSI30"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1450,"EQUIP_SKEY":969,"KOR_NM":"자동 감광제 도포장치","ENG_NM":"MEMS Track for Aligner","PHOTO_SKEY":"1506","EQ_ROOM_SKEY":50,"FEATURE":"자동 감광제 도포장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1404,"EQUIP_SKEY":983,"KOR_NM":"자동 감광제 도포장치","ENG_NM":"I-line Track","PHOTO_SKEY":"1397","EQ_ROOM_SKEY":50,"FEATURE":"자동 감광제 도포장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1449,"EQUIP_SKEY":900,"KOR_NM":"자동 감광제 도포장치","ENG_NM":"Auto Track for Aligner","PHOTO_SKEY":"1505","EQ_ROOM_SKEY":50,"FEATURE":"자동 감광제 도포장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1733,"KOR_NM":"자동 감광제 도포장치","ENG_NM":"I-line Track","EQ_ROOM_SKEY":50,"FEATURE":"자동 감광제 도포장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1242,"EQUIP_SKEY":926,"KOR_NM":"자동 리프트오프 장비","ENG_NM":"Auto Lift-off M/C","PHOTO_SKEY":"1234","EQ_ROOM_SKEY":50,"FEATURE":"자동 리프트오프 장비","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1248,"EQUIP_SKEY":849,"KOR_NM":"자동 양면 마스크 얼라이너 장비","ENG_NM":"Automated Doubleside Contact Aligner ","PHOTO_SKEY":"1240","EQ_ROOM_SKEY":50,"FEATURE":"자동 양면 마스크 얼라이너 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1330,"EQUIP_SKEY":891,"KOR_NM":"자동 웨이퍼 본딩장치","ENG_NM":"Wafer Bonder","PHOTO_SKEY":"1322","EQ_ROOM_SKEY":50,"FEATURE":"자동 웨이퍼 본딩장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1420,"EQUIP_SKEY":956,"KOR_NM":"자동 프로브 스테이션","ENG_NM":"Auto Probe Station","PHOTO_SKEY":"1413","EQ_ROOM_SKEY":50,"FEATURE":"자동 프로브 스테이션"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1233,"EQUIP_SKEY":979,"KOR_NM":"자동 화학기상 증착장치","ENG_NM":"PECVD(Auto)","PHOTO_SKEY":"1225","EQ_ROOM_SKEY":50,"FEATURE":"자동 화학기상 증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1344,"EQUIP_SKEY":851,"KOR_NM":"자동감광제 도포장치(ArF용)","ENG_NM":"Track(Spinner) for ArF Immersion Scanner","PHOTO_SKEY":"1336","EQ_ROOM_SKEY":50,"FEATURE":"자동감광제 도포장치(ArF용)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1322,"EQUIP_SKEY":829,"KOR_NM":"자동핵산 추출기","ENG_NM":"Nucleic Acid Extractor","PHOTO_SKEY":"1314","EQ_ROOM_SKEY":50,"FEATURE":"자동핵산 추출기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1428,"EQUIP_SKEY":940,"KOR_NM":"잔류응력 측정기","ENG_NM":"Stress Gauge","PHOTO_SKEY":"1421","EQ_ROOM_SKEY":50,"FEATURE":"잔류응력 측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1298,"EQUIP_SKEY":921,"KOR_NM":"저압 화학기상 증착로","ENG_NM":"Furnace(LPCVD Nitride)","PHOTO_SKEY":"1290","EQ_ROOM_SKEY":50,"FEATURE":"저압 화학기상 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1294,"EQUIP_SKEY":1014,"KOR_NM":"저압 화학기상 증착로","ENG_NM":"Furnace (LPCVD Poly)","PHOTO_SKEY":"1286","EQ_ROOM_SKEY":50,"FEATURE":"저압 화학기상 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1289,"EQUIP_SKEY":1015,"KOR_NM":"저압 화학기상 증착로","ENG_NM":"Furnace (LPCVD TEOS)","PHOTO_SKEY":"1281","EQ_ROOM_SKEY":50,"FEATURE":"저압 화학기상 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1299,"EQUIP_SKEY":1016,"KOR_NM":"저압 화학기상 증착로","ENG_NM":"Furnace (LPCVD Nitride)","PHOTO_SKEY":"1291","EQ_ROOM_SKEY":50,"FEATURE":"저압 화학기상 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1349,"EQUIP_SKEY":795,"KOR_NM":"저압 화학기상 증착로","ENG_NM":"LPCVD Nitride Furnace","PHOTO_SKEY":"1341","EQ_ROOM_SKEY":50,"FEATURE":"저압 화학기상 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1300,"EQUIP_SKEY":1017,"KOR_NM":"저온 열처리 확산로","ENG_NM":"Furnace (Low Temp Anneal)","PHOTO_SKEY":"1292","EQ_ROOM_SKEY":50,"FEATURE":"저온 열처리 확산로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1409,"EQUIP_SKEY":917,"KOR_NM":"저온 이온빔 단면가공기","ENG_NM":"Cross Section Polisher","PHOTO_SKEY":"1402","EQ_ROOM_SKEY":50,"FEATURE":"저온 이온빔 단면가공기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1236,"EQUIP_SKEY":904,"KOR_NM":"저응력 질화막 증착로","ENG_NM":"Low Stress Nitride Furnace","PHOTO_SKEY":"1228","EQ_ROOM_SKEY":50,"FEATURE":"저응력 질화막 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1237,"EQUIP_SKEY":1010,"KOR_NM":"저응력 질화막 증착로","ENG_NM":"Low Stress Nitride Furnace","PHOTO_SKEY":"1229","EQ_ROOM_SKEY":50,"FEATURE":"저응력 질화막 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1415,"EQUIP_SKEY":952,"KOR_NM":"적외선 분광기","ENG_NM":"FT-IR Microscope","PHOTO_SKEY":"1408","EQ_ROOM_SKEY":50,"FEATURE":"적외선 분광기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1421,"EQUIP_SKEY":949,"KOR_NM":"전계방출형 주사전자현미경","ENG_NM":"FE-SEM (EDS)","PHOTO_SKEY":"1414","EQ_ROOM_SKEY":50,"FEATURE":"전계방출형 주사전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1422,"EQUIP_SKEY":950,"KOR_NM":"전계방출형 주사전자현미경","ENG_NM":"FE-SEM (S4800-1)","PHOTO_SKEY":"1415","EQ_ROOM_SKEY":50,"FEATURE":"전계방출형 주사전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1760,"KOR_NM":"전계방출형 주사전자현미경","ENG_NM":"FE-SEM","EQ_ROOM_SKEY":50,"FEATURE":"전계방출형 주사전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1253,"EQUIP_SKEY":941,"KOR_NM":"전계방출형 투과전자현미경","ENG_NM":"FE-TEM (300 kV)","PHOTO_SKEY":"1245","EQ_ROOM_SKEY":50,"FEATURE":"전계방출형 투과전자현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1063,"KOR_NM":"전도체 식각 장치","ENG_NM":"Conductor Etch","PHOTO_SKEY":"","EQ_ROOM_SKEY":50,"FEATURE":"High productivity\nExcellent etching profile","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1019,"KOR_NM":"전자빔증착장치","ENG_NM":"NEMS - E-Beam Evaporator","EQ_ROOM_SKEY":50,"FEATURE":"전자빔증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1020,"KOR_NM":"전자빔증착장치","ENG_NM":"NEMS - E-Beam Evaporator","EQ_ROOM_SKEY":50,"FEATURE":"전자빔증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":978,"KOR_NM":"전자선용 감광제 도포장치","ENG_NM":"E-beam Track","EQ_ROOM_SKEY":50,"FEATURE":"전자선용 감광제 도포장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1755,"KOR_NM":"절연막 식각 장치","ENG_NM":"Dielectric Etch","EQ_ROOM_SKEY":50,"FEATURE":"절연막 식각 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1050,"KOR_NM":"절연막실리콘 식각장치","ENG_NM":"Dielectirc / Poly Etcher","PHOTO_SKEY":"","EQ_ROOM_SKEY":50,"FEATURE":"Dielectric Etcher×1, Si Etcher×1 ~0.1㎛ Tech. CMOS\nFront-End, Back-End, STI, Gate Poly","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1332,"EQUIP_SKEY":991,"KOR_NM":"접착 및 압인 가공장치","ENG_NM":"Fusion bonder / Hot embossing","PHOTO_SKEY":"1324","EQ_ROOM_SKEY":50,"FEATURE":"접착 및 압인 가공장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1419,"EQUIP_SKEY":915,"KOR_NM":"접촉식 단차측정기","ENG_NM":"Surface Profiler","PHOTO_SKEY":"1412","EQ_ROOM_SKEY":50,"FEATURE":"접촉식 단차측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1436,"EQUIP_SKEY":990,"KOR_NM":"접촉식 마스크 노광기","ENG_NM":"Contact Aligner ","PHOTO_SKEY":"1429","EQ_ROOM_SKEY":50,"FEATURE":"접촉식 마스크 노광기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":962,"KOR_NM":"접촉식 마스크 노광기","ENG_NM":"Contact Aligner","EQ_ROOM_SKEY":50,"FEATURE":"접촉식 마스크 노광기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1406,"EQUIP_SKEY":951,"KOR_NM":"주사탐침현미경","ENG_NM":"AFM (SPM-PSIA)","PHOTO_SKEY":"1399","EQ_ROOM_SKEY":50,"FEATURE":"주사탐침현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1302,"EQUIP_SKEY":799,"KOR_NM":"중전류 이온주입 장치","ENG_NM":"Medium current Ion Implanter","PHOTO_SKEY":"1294","EQ_ROOM_SKEY":50,"FEATURE":"중전류 이온주입 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1240,"EQUIP_SKEY":975,"KOR_NM":"진공 퍼니스","ENG_NM":"Vacuum Furnace","PHOTO_SKEY":"1232","EQ_ROOM_SKEY":50,"FEATURE":"진공 퍼니스","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1269,"EQUIP_SKEY":967,"KOR_NM":"진공오븐","ENG_NM":"Vacuum Oven","PHOTO_SKEY":"1261","EQ_ROOM_SKEY":50,"FEATURE":"진공오븐"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":881,"KOR_NM":"진공포장기","ENG_NM":"Vacuum Packaging","EQ_ROOM_SKEY":50,"FEATURE":"진공포장기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":790,"KOR_NM":"진공포장기","ENG_NM":"Vacuum Packaging","EQ_ROOM_SKEY":50,"FEATURE":"진공포장기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1317,"EQUIP_SKEY":803,"KOR_NM":"체외진단용 유전자 증폭기","ENG_NM":"Real Time PCR","PHOTO_SKEY":"1309","EQ_ROOM_SKEY":50,"FEATURE":"체외진단용 유전자 증폭기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1037,"KOR_NM":"초가속 온습도 스트레스 시험기","ENG_NM":"NEMS HigH Accelerate","EQ_ROOM_SKEY":50,"FEATURE":"초가속 온습도 스트레스 시험기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1314,"EQUIP_SKEY":820,"KOR_NM":"초음파 발생기","ENG_NM":"Ultrasonic generator","PHOTO_SKEY":"1306","EQ_ROOM_SKEY":50,"FEATURE":"초음파 발생기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1315,"EQUIP_SKEY":895,"KOR_NM":"초음파 융착기","ENG_NM":"Sonic Bonder","PHOTO_SKEY":"1307","EQ_ROOM_SKEY":50,"FEATURE":"초음파 융착기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1274,"EQUIP_SKEY":929,"KOR_NM":"충방전 테스트 시스템","ENG_NM":"Charge / Discharge test system","PHOTO_SKEY":"1266","EQ_ROOM_SKEY":50,"FEATURE":"충방전 테스트 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1749,"KOR_NM":"층간중첩도  측정장치","ENG_NM":"Overlay","EQ_ROOM_SKEY":50,"FEATURE":"층간중첩도  측정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1401,"EQUIP_SKEY":870,"KOR_NM":"층간패턴 중첩도 측정장치","ENG_NM":"Overlay measurement","PHOTO_SKEY":"1394","EQ_ROOM_SKEY":50,"FEATURE":"층간패턴 중첩도 측정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1400,"EQUIP_SKEY":988,"KOR_NM":"층간패턴 중첩도 측정장치","ENG_NM":"Overlay Measurement","PHOTO_SKEY":"1393","EQ_ROOM_SKEY":50,"FEATURE":"층간패턴 중첩도 측정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1245,"EQUIP_SKEY":974,"KOR_NM":"컵타입 전해도금장치","ENG_NM":"NEMS - Electroplating","PHOTO_SKEY":"1237","EQ_ROOM_SKEY":50,"FEATURE":"컵타입 전해도금장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1244,"EQUIP_SKEY":903,"KOR_NM":"컵타입 전해도금장치","ENG_NM":"NEMS - Electroplater","PHOTO_SKEY":"1236","EQ_ROOM_SKEY":50,"FEATURE":"컵타입 전해도금장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1216,"EQUIP_SKEY":778,"KOR_NM":"텅스텐 화학기상 증착장치","ENG_NM":"CVD W","PHOTO_SKEY":"1208","EQ_ROOM_SKEY":50,"FEATURE":"텅스텐 화학기상 증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1210,"EQUIP_SKEY":1025,"KOR_NM":"티타늄 물리기상 증착장치","ENG_NM":"CMOS Sputter - Ti/TiN/Co/Al","PHOTO_SKEY":"1202","EQ_ROOM_SKEY":50,"FEATURE":"티타늄 물리기상 증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":989,"KOR_NM":"파티클오염 검수장치","ENG_NM":"Particle Counter","EQ_ROOM_SKEY":50,"FEATURE":"파티클오염 검수장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1398,"EQUIP_SKEY":814,"KOR_NM":"파티클오염 검수장치","ENG_NM":"Particle Counter","PHOTO_SKEY":"1391","EQ_ROOM_SKEY":50,"FEATURE":"LDI20","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1734,"KOR_NM":"패키지 실장 평가 시스템","ENG_NM":"Reflow","EQ_ROOM_SKEY":50,"FEATURE":"패키지 실장 평가 시스템"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1350,"EQUIP_SKEY":806,"KOR_NM":"패턴 웨이퍼 결함 검사 장비","ENG_NM":"Defect Inspection","PHOTO_SKEY":"1342","EQ_ROOM_SKEY":50,"FEATURE":"패턴 웨이퍼 결함 검사 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1219,"EQUIP_SKEY":886,"KOR_NM":"펨토초 유연소재 가공장치","ENG_NM":"Multi-function fs laser systems ","PHOTO_SKEY":"1211","EQ_ROOM_SKEY":50,"FEATURE":"펨토초 유연소재 가공장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":906,"KOR_NM":"편광 현미경","ENG_NM":"Polarizing microscope","EQ_ROOM_SKEY":50,"FEATURE":"편광 현미경"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1452,"EQUIP_SKEY":1013,"KOR_NM":"폴리머 도포장치","ENG_NM":"Parylene Coater","PHOTO_SKEY":"1508","EQ_ROOM_SKEY":50,"FEATURE":"폴리머 도포장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1318,"EQUIP_SKEY":913,"KOR_NM":"폴리머 몰딩 장치","ENG_NM":"polymer molding","PHOTO_SKEY":"1310","EQ_ROOM_SKEY":50,"FEATURE":"폴리머 몰딩 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1247,"EQUIP_SKEY":997,"KOR_NM":"폴리머 식각장치","ENG_NM":"Polymer Etcher","PHOTO_SKEY":"1239","EQ_ROOM_SKEY":50,"FEATURE":"폴리머 식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1389,"EQUIP_SKEY":993,"KOR_NM":"폴리메탈 식각장치","ENG_NM":"Poly / Metal Etcher + PR Strip","PHOTO_SKEY":"1382","EQ_ROOM_SKEY":50,"FEATURE":"폴리메탈 식각장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1293,"EQUIP_SKEY":811,"KOR_NM":"폴리실리콘 증착로","ENG_NM":"Furnace (LPCVD Poly)","PHOTO_SKEY":"1285","EQ_ROOM_SKEY":50,"FEATURE":"폴리실리콘 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1309,"EQUIP_SKEY":848,"KOR_NM":"표면 플라즈마 공명기","ENG_NM":"Surface Plasmon Resonance","PHOTO_SKEY":"1301","EQ_ROOM_SKEY":50,"FEATURE":"표면 플라즈마 공명기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1418,"EQUIP_SKEY":939,"KOR_NM":"표면단차측정기","ENG_NM":"Surface Profiler (Etch)","PHOTO_SKEY":"1411","EQ_ROOM_SKEY":50,"FEATURE":"표면단차측정기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1310,"EQUIP_SKEY":800,"KOR_NM":"표면탄성파 발생기","ENG_NM":"Surface Acoustic Wave SAW Generator","PHOTO_SKEY":"1302","EQ_ROOM_SKEY":50,"FEATURE":"표면탄성파 발생기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1341,"EQUIP_SKEY":821,"KOR_NM":"플라즈마 화학기상 증착 장비","ENG_NM":"12\" PECVD","PHOTO_SKEY":"1333","EQ_ROOM_SKEY":50,"FEATURE":"고밀도 플라즈마 화학기상 증착 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1342,"EQUIP_SKEY":854,"KOR_NM":"플라즈마 화학기상 증착 장비","ENG_NM":"300mm PECVD","PHOTO_SKEY":"1334","EQ_ROOM_SKEY":50,"FEATURE":"플라즈마 화학기상 증착 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1320,"EQUIP_SKEY":825,"KOR_NM":"플로팅 커팅기","ENG_NM":"Plotting Cutting","PHOTO_SKEY":"1312","EQ_ROOM_SKEY":50,"FEATURE":"플로팅 커팅기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1329,"EQUIP_SKEY":815,"KOR_NM":"플립 칩 본더","ENG_NM":"Flip chip bonder","PHOTO_SKEY":"1321","EQ_ROOM_SKEY":50,"FEATURE":"플립 칩 본더"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1327,"EQUIP_SKEY":847,"KOR_NM":"필름 라미네이터","ENG_NM":"Film Laminating","PHOTO_SKEY":"1319","EQ_ROOM_SKEY":50,"FEATURE":"필름 라미네이터"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1375,"EQUIP_SKEY":912,"KOR_NM":"필름 제거 세정 장치","ENG_NM":"Film Strip Wet Station","PHOTO_SKEY":"1368","EQ_ROOM_SKEY":50,"FEATURE":"필름 제거 세정 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1288,"EQUIP_SKEY":812,"KOR_NM":"화학기상 증착로","ENG_NM":"Furnace (LPCVD TEOS)","PHOTO_SKEY":"1280","EQ_ROOM_SKEY":50,"FEATURE":"화학기상 증착로"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1212,"EQUIP_SKEY":783,"KOR_NM":"화학기상 증착장치","ENG_NM":"a-Si/Oxide/Nitride","PHOTO_SKEY":"1204","EQ_ROOM_SKEY":50,"FEATURE":"화학기상 증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1214,"EQUIP_SKEY":1023,"KOR_NM":"화학기상 증착장치","ENG_NM":"SiH4 Base PECVD/HDP","PHOTO_SKEY":"1206","EQ_ROOM_SKEY":50,"FEATURE":"화학기상 증착장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1213,"EQUIP_SKEY":1024,"KOR_NM":"화학기상 증착장치","ENG_NM":"PETEOS/BPSG","PHOTO_SKEY":"1205","EQ_ROOM_SKEY":50,"FEATURE":"화학기상 증착장치","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1437,"EQUIP_SKEY":973,"KOR_NM":"화학물리적 구리박막 연마장치","ENG_NM":"CMP System","PHOTO_SKEY":"1430","EQ_ROOM_SKEY":50,"FEATURE":"화학물리적 구리박막 연마장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1386,"EQUIP_SKEY":1003,"KOR_NM":"화학물리적 산화막 연마장치","ENG_NM":"W CMP","PHOTO_SKEY":"1379","EQ_ROOM_SKEY":50,"FEATURE":"화학물리적 산화막 연마장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1306,"EQUIP_SKEY":869,"KOR_NM":"화학물리적 산화막 연마장치","ENG_NM":"Oxide CMP","PHOTO_SKEY":"1298","EQ_ROOM_SKEY":50,"FEATURE":"화학물리적 산화막 연마장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1739,"KOR_NM":"화학센서 평가시스템","ENG_NM":"Sensing Performance Measurement System for Chemical Sensor","PHOTO_SKEY":"","EQ_ROOM_SKEY":50,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1751,"KOR_NM":"후면광자검출기","ENG_NM":"Inverted Photon Emission Microscope","EQ_ROOM_SKEY":50,"FEATURE":"후면광자검출기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1632,"KOR_NM":"Auto. double side mask alignment","ENG_NM":"Auto. double side mask alignment","EQ_ROOM_SKEY":50,"FEATURE":"Auto. double side mask alignment"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1064,"KOR_NM":"BiO Wet Station","EQ_ROOM_SKEY":50},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1425,"EQUIP_SKEY":832,"KOR_NM":"Bio-SEM","ENG_NM":"Bio-SEM","PHOTO_SKEY":"1418","EQ_ROOM_SKEY":50,"FEATURE":"Bio-SEM"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1740,"KOR_NM":"DAL10","EQ_ROOM_SKEY":50,"FEATURE":"DAL10"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1426,"EQUIP_SKEY":857,"KOR_NM":"Desktop SEM","ENG_NM":"Desktop SEM","PHOTO_SKEY":"1419","EQ_ROOM_SKEY":50,"FEATURE":"Desktop SEM"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1042,"KOR_NM":"EME40","ENG_NM":"metal etch","EQ_ROOM_SKEY":50,"FEATURE":"EME40"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1424,"EQUIP_SKEY":931,"KOR_NM":"FE-SEM(S4800-2)","ENG_NM":"FE-SEM(S4800-2)","PHOTO_SKEY":"1417","EQ_ROOM_SKEY":50,"FEATURE":"FE-SEM(S4800-2)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1376,"EQUIP_SKEY":876,"KOR_NM":"FOUP 세정장치","ENG_NM":"FOUP Cleaner","PHOTO_SKEY":"1369","EQ_ROOM_SKEY":50,"FEATURE":"FOUP 세정장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1757,"KOR_NM":"IGZO Sputter","ENG_NM":"IGZO Sputter","EQ_ROOM_SKEY":50,"FEATURE":"IGZO Sputter"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1447,"EQUIP_SKEY":844,"KOR_NM":"Linux server (dotori)","ENG_NM":"NN+A236+D236","PHOTO_SKEY":"1503","EQ_ROOM_SKEY":50,"FEATURE":"Linux server (dotori)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1059,"KOR_NM":"LMS10","ENG_NM":"광학현미경","EQ_ROOM_SKEY":50,"FEATURE":"LMS10"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1230,"EQUIP_SKEY":858,"KOR_NM":"Low Temp. PECVD","ENG_NM":"Low Temp. PECVD","PHOTO_SKEY":"1222","EQ_ROOM_SKEY":50,"FEATURE":"","FEATURE_ENG":"● PE Oxide\n  - Dep Rate : 1080Å/min @ 150℃\n  - Dep. Uniformity : under 3%\n  - Wafer to Wafer Uniformity : under 4.0%\n  - Stress : about -160MPa @ 150℃\n  - BOE Wet E/R : about 80Å/min\n  - Reflective Index : 1.46 ~ 1.47\n  - Process Temp. : 60 ~ 150℃\n  - SiOx patterning is possible in conjunction with Lift Off Process @ 60℃ Dep.\n\n● PE Nitride\n  - Dep Rate : 240Å/min @ 150℃\n  - Dep. Uniformity : under 3%\n  - Wafer to Wafer Uniformity : under 4.0%\n  - Stress : about -600MPa@ 150℃\n  - BOE Wet E/R : about 3Å/min\n  - H3PO4 Wet E/R : about 60Å/min\n  - Reflective Index : 2.0 ~ 2.1\n  - Process Temp. : 60 ~ 150℃\n  - SiNx patterning is possible in conjunction with Lift Off Process @ 60℃ Dep."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1056,"KOR_NM":"LTK10","ENG_NM":"Track System","EQ_ROOM_SKEY":50,"FEATURE":"LTK10"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1057,"KOR_NM":"LTK20","ENG_NM":"TEL ACT-8 Track System","EQ_ROOM_SKEY":50,"FEATURE":"LTK20"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1055,"KOR_NM":"LTK50","ENG_NM":"ArF DRY용 Track","EQ_ROOM_SKEY":50,"FEATURE":"LTK50"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1058,"KOR_NM":"LTK60","ENG_NM":"S204B용 track","EQ_ROOM_SKEY":50,"FEATURE":"LTK60"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":960,"KOR_NM":"Material Analysis","ENG_NM":"Material Analysis","EQ_ROOM_SKEY":50,"FEATURE":"Material Analysis"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1039,"KOR_NM":"NEV50","ENG_NM":" ion beam evaporator","EQ_ROOM_SKEY":50,"FEATURE":"NEV50"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1043,"KOR_NM":"NUV10","ENG_NM":"UV Curing ","EQ_ROOM_SKEY":50,"FEATURE":"NUV10"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1040,"KOR_NM":"NWS50","ENG_NM":"Wet cleaning","EQ_ROOM_SKEY":50,"FEATURE":"NWS50"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":874,"KOR_NM":"OPC","ENG_NM":"OPC","EQ_ROOM_SKEY":50,"FEATURE":"OPC"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1227,"EQUIP_SKEY":833,"KOR_NM":"Spray coater","ENG_NM":"Spray coater","PHOTO_SKEY":"1219","EQ_ROOM_SKEY":50,"FEATURE":"Spray coater"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"EQUIP_SKEY":1626,"KOR_NM":"sputter+glove box ","ENG_NM":"sputter+glove box ","EQ_ROOM_SKEY":50,"FEATURE":"sputter+glove box "},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"나노종합기술원","SINGLE_MODE":true,"FILE_SKEY":1221,"EQUIP_SKEY":933,"KOR_NM":"Wet cleaning","ENG_NM":"Wet cleaning","PHOTO_SKEY":"1213","EQ_ROOM_SKEY":50,"FEATURE":"Wet cleaning"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2310,"EQUIP_SKEY":1554,"KOR_NM":"3차원 공정시스템","ENG_NM":"3D fabrication system","PHOTO_SKEY":"2371","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2376,"EQUIP_SKEY":1622,"KOR_NM":"검사용 마이크로스코프","ENG_NM":"Inspection microscope(manual)","PHOTO_SKEY":"2437","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2381,"EQUIP_SKEY":1590,"KOR_NM":"검사용 마이크로스코프","ENG_NM":"Inspection microscope(semi-auto)","PHOTO_SKEY":"2442","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2347,"EQUIP_SKEY":1593,"KOR_NM":"고성능 산화막식각장비","ENG_NM":"Deep oxide/SiC etching system","PHOTO_SKEY":"2408","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2378,"EQUIP_SKEY":1624,"KOR_NM":"고성능 절연막 식각기","ENG_NM":"Dielectric ICP Etcher System","PHOTO_SKEY":"2439","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2349,"EQUIP_SKEY":1595,"KOR_NM":"금속 습식식각장비","ENG_NM":"Metal wet etch station","PHOTO_SKEY":"2410","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2356,"EQUIP_SKEY":1602,"KOR_NM":"금속박막식각시스템","ENG_NM":"Metal etcher system","PHOTO_SKEY":"2417","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2362,"EQUIP_SKEY":1608,"KOR_NM":"금속박막증착시스템","ENG_NM":"Metal sputtering system","PHOTO_SKEY":"2423","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2339,"EQUIP_SKEY":1585,"KOR_NM":"금속습식세정장비","ENG_NM":"Metal Wet Station","PHOTO_SKEY":"2400","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2322,"EQUIP_SKEY":1567,"KOR_NM":"급속열처리시스템","ENG_NM":"RTP(Rapid Thermal Process) System","PHOTO_SKEY":"2383","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2335,"EQUIP_SKEY":1581,"KOR_NM":"급속열처리장비","ENG_NM":"Rapid Thermal Processor","PHOTO_SKEY":"2396","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2334,"EQUIP_SKEY":1580,"KOR_NM":"기상 자기조립박막 증착시스템","ENG_NM":"Vapor Self-Assembled Monolayer deposition system","PHOTO_SKEY":"2395","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2320,"EQUIP_SKEY":1565,"KOR_NM":"기판 절단 시스템","ENG_NM":"Substrate dicing saw system","PHOTO_SKEY":"2381","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2318,"EQUIP_SKEY":1563,"KOR_NM":"기판그라인딩시스템","ENG_NM":"Substrate grinding system","PHOTO_SKEY":"2379","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2329,"EQUIP_SKEY":1575,"KOR_NM":"기판두께측정장비","ENG_NM":"Substrate measurement system","PHOTO_SKEY":"2390","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2308,"EQUIP_SKEY":1552,"KOR_NM":"기판접합용 정렬기","ENG_NM":"Substrate bond aligner","PHOTO_SKEY":"2369","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2319,"EQUIP_SKEY":1564,"KOR_NM":"기판폴리싱시스템","ENG_NM":"Substrate polishing system","PHOTO_SKEY":"2380","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2309,"EQUIP_SKEY":1553,"KOR_NM":"나노임프린팅 시스템","ENG_NM":"Nano-imprinting lithography system","PHOTO_SKEY":"2370","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2361,"EQUIP_SKEY":1607,"KOR_NM":"다기능 전자빔 진공증착 시스템","ENG_NM":"Multi-functional electron beam evaporation system","PHOTO_SKEY":"2422","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2346,"EQUIP_SKEY":1592,"KOR_NM":"다기능직류형이온밀링시스템","ENG_NM":"다기능직류형이온밀링시스템","PHOTO_SKEY":"2407","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2345,"EQUIP_SKEY":1591,"KOR_NM":"단차측정기","ENG_NM":"Surface profiling measuring system","PHOTO_SKEY":"2406","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2313,"EQUIP_SKEY":1557,"KOR_NM":"레이저 라이터","ENG_NM":"Laser writer","PHOTO_SKEY":"2374","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2330,"EQUIP_SKEY":1576,"KOR_NM":"레이저마킹시스템","ENG_NM":"substrate Marking system","PHOTO_SKEY":"2391","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2311,"EQUIP_SKEY":1555,"KOR_NM":"마스크 매엽식 세정장치","ENG_NM":"Mask Single Wet Tool","PHOTO_SKEY":"2372","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2377,"EQUIP_SKEY":1623,"KOR_NM":"박막두께측정기","ENG_NM":"Reflectometer","PHOTO_SKEY":"2438","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2338,"EQUIP_SKEY":1584,"KOR_NM":"박막스트레스측정시스템","ENG_NM":"Film stress measurement system","PHOTO_SKEY":"2399","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2380,"EQUIP_SKEY":1621,"KOR_NM":"박막증착시스템","ENG_NM":"Plasma-enhanced chemical vapor deposition system","PHOTO_SKEY":"2441","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2359,"EQUIP_SKEY":1605,"KOR_NM":"배선공정용 화학기상증착장비","ENG_NM":"배선공정용 화학기상증착장비","PHOTO_SKEY":"2420","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2333,"EQUIP_SKEY":1579,"KOR_NM":"비접촉 미세형상 측정기","ENG_NM":"Optical surface profiler","PHOTO_SKEY":"2394","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2364,"EQUIP_SKEY":1610,"KOR_NM":"비정질실리콘증착장비","ENG_NM":"a-Si PECVD","PHOTO_SKEY":"2425","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2357,"EQUIP_SKEY":1603,"KOR_NM":"소자측정분석시스템","ENG_NM":"Semi Auto probe Station System","PHOTO_SKEY":"2418","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2324,"EQUIP_SKEY":1570,"KOR_NM":"수직 열처리 시스템","ENG_NM":"Vertical Annealing Furnace","PHOTO_SKEY":"2385","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2323,"EQUIP_SKEY":1569,"KOR_NM":"수평 열처리 시스템","ENG_NM":"Horizontal Annealing Furnace","PHOTO_SKEY":"2384","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2314,"EQUIP_SKEY":1559,"KOR_NM":"스핀코팅기 ","ENG_NM":"spin coater(6inch)","PHOTO_SKEY":"2375","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2315,"EQUIP_SKEY":1560,"KOR_NM":"스핀코팅기","ENG_NM":"spin coater(pieces)","PHOTO_SKEY":"2376","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2305,"EQUIP_SKEY":1549,"KOR_NM":"스핀코팅기","ENG_NM":"manual spin coater_4inch","PHOTO_SKEY":"2366","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2317,"EQUIP_SKEY":1562,"KOR_NM":"스핀코팅기(포토레지스트 트랙시스템)","ENG_NM":"PR track system","PHOTO_SKEY":"2378","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2355,"EQUIP_SKEY":1601,"KOR_NM":"실리콘 고준위 식각기","ENG_NM":"Silicon Deep Reactive Ion Etcher","PHOTO_SKEY":"2416","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2350,"EQUIP_SKEY":1596,"KOR_NM":"실리콘 습식식각장비","ENG_NM":"Si wet etch station","PHOTO_SKEY":"2411","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2358,"EQUIP_SKEY":1604,"KOR_NM":"씨모스전용 저압기상증착장비","ENG_NM":"씨모스전용 저압기상증착장비","PHOTO_SKEY":"2419","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2371,"EQUIP_SKEY":1617,"KOR_NM":"엘립소메타 시스템","ENG_NM":"Ellipsometer system","PHOTO_SKEY":"2432","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2367,"EQUIP_SKEY":1613,"KOR_NM":"열 원자층 증착 시스템","ENG_NM":"thermal atomic layer depositon system","PHOTO_SKEY":"2428","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"EQUIP_SKEY":1568,"KOR_NM":"열확산로시스템","ENG_NM":"Diffusion furnace","EQ_ROOM_SKEY":51},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2343,"EQUIP_SKEY":1589,"KOR_NM":"웨이퍼 건조기","ENG_NM":"Spin Rince Dryer","PHOTO_SKEY":"2404","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2341,"EQUIP_SKEY":1587,"KOR_NM":"웨이퍼 건조기","ENG_NM":"Spin Rince Dryer","PHOTO_SKEY":"2402","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2342,"EQUIP_SKEY":1588,"KOR_NM":"웨이퍼식각기(Cleaning)","ENG_NM":"cleaning wet station","PHOTO_SKEY":"2403","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2354,"EQUIP_SKEY":1600,"KOR_NM":"웨이퍼식각기(Etching)","ENG_NM":"etch wet station","PHOTO_SKEY":"2415","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2316,"EQUIP_SKEY":1561,"KOR_NM":"자동마스크정렬기","ENG_NM":"Automatic mask aligner","PHOTO_SKEY":"2377","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2360,"EQUIP_SKEY":1606,"KOR_NM":"저온플라즈마증착시스템","ENG_NM":"저온플라즈마증착시스템","PHOTO_SKEY":"2421","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2331,"EQUIP_SKEY":1577,"KOR_NM":"저진공 전자현미경","ENG_NM":"Low Vacuum Microscope","PHOTO_SKEY":"2392","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2366,"EQUIP_SKEY":1612,"KOR_NM":"전기도금장비","ENG_NM":"Electroplating machine","PHOTO_SKEY":"2427","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2312,"EQUIP_SKEY":1556,"KOR_NM":"전자빔리소그래피 시스템","ENG_NM":"Electron beam lithography system","PHOTO_SKEY":"2373","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2304,"EQUIP_SKEY":1548,"KOR_NM":"전자빔묘화공정시스템","ENG_NM":"전자빔묘화공정시스템","PHOTO_SKEY":"2365","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2373,"EQUIP_SKEY":1619,"KOR_NM":"전자빔진공증착기","ENG_NM":"E-beam Evaporation system","PHOTO_SKEY":"2434","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2372,"EQUIP_SKEY":1618,"KOR_NM":"절연막 스퍼터링 시스템","ENG_NM":"Dielectric sputtering system","PHOTO_SKEY":"2433","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2353,"EQUIP_SKEY":1599,"KOR_NM":"절연막 식각기","ENG_NM":"Dielectric Etcher system","PHOTO_SKEY":"2414","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2332,"EQUIP_SKEY":1578,"KOR_NM":"접촉각 측정 시스템","ENG_NM":"Contact angle measurement system","PHOTO_SKEY":"2393","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2352,"EQUIP_SKEY":1598,"KOR_NM":"제논 릴리즈 식각시스템","ENG_NM":"Xenon Release etcher system","PHOTO_SKEY":"2413","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2337,"EQUIP_SKEY":1583,"KOR_NM":"중전류형 이온주입장비","ENG_NM":"Medium current ion implanter","PHOTO_SKEY":"2398","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"EQUIP_SKEY":1558,"KOR_NM":"진공건조기","ENG_NM":"Vacuum Oven","EQ_ROOM_SKEY":51},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2363,"EQUIP_SKEY":1609,"KOR_NM":"질화알루미늄 스퍼터링 시스템","ENG_NM":"AlN Sputtering System","PHOTO_SKEY":"2424","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2336,"EQUIP_SKEY":1582,"KOR_NM":"초음파탐상이미징장비","ENG_NM":"Scanning Acoustic Microscope","PHOTO_SKEY":"2397","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2307,"EQUIP_SKEY":1551,"KOR_NM":"축소미세노광장비","ENG_NM":"I-line stepper","PHOTO_SKEY":"2368","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2351,"EQUIP_SKEY":1597,"KOR_NM":"클러스터 건식 식각기","ENG_NM":"Cluster Dry etcher","PHOTO_SKEY":"2412","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2369,"EQUIP_SKEY":1615,"KOR_NM":"패럴린 코팅 시스템","ENG_NM":"Parylene coating system","PHOTO_SKEY":"2430","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2328,"EQUIP_SKEY":1574,"KOR_NM":"패턴 임계치수측정 주사전자현미경","ENG_NM":"패턴 임계치수측정 주사전자현미경","PHOTO_SKEY":"2389","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2326,"EQUIP_SKEY":1572,"KOR_NM":"포클열확산로 시스템","ENG_NM":"POCl3 diffusion furnace system","PHOTO_SKEY":"2387","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2306,"EQUIP_SKEY":1550,"KOR_NM":"포토레지스트트랙시스템","ENG_NM":"Photoresist Track System","PHOTO_SKEY":"2367","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2321,"EQUIP_SKEY":1566,"KOR_NM":"포토습식세정장비","ENG_NM":"Photo Wet Station","PHOTO_SKEY":"2382","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2365,"EQUIP_SKEY":1611,"KOR_NM":"폴리실리콘화학기상증착장비","ENG_NM":"(Doped) Poly-Si LPCVD","PHOTO_SKEY":"2426","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2340,"EQUIP_SKEY":1586,"KOR_NM":"표면저항측정시스템","ENG_NM":"Sheet Resistance Measurement System","PHOTO_SKEY":"2401","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2368,"EQUIP_SKEY":1614,"KOR_NM":"플라즈마 원자층 증착 시스템","ENG_NM":"Plasma Atomic Layer Deposition System","PHOTO_SKEY":"2429","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2374,"EQUIP_SKEY":1620,"KOR_NM":"플라즈마증착시스템","ENG_NM":"Plasma deposition system","PHOTO_SKEY":"2435","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2327,"EQUIP_SKEY":1573,"KOR_NM":"화학기계연마시스템","ENG_NM":"화학기계연마시스템","PHOTO_SKEY":"2388","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2370,"EQUIP_SKEY":1616,"KOR_NM":"화학기상증착시스템","ENG_NM":"LPCVD system","PHOTO_SKEY":"2431","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2348,"EQUIP_SKEY":1594,"KOR_NM":"화합물반도체 식각장비","ENG_NM":"Compound semiconductor etching system","PHOTO_SKEY":"2409","EQ_ROOM_SKEY":51,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"대구경북과학기술원","SINGLE_MODE":true,"FILE_SKEY":2302,"EQUIP_SKEY":1547,"KOR_NM":"I-line축소노광기","ENG_NM":"I-line stepper","PHOTO_SKEY":"2363","EQ_ROOM_SKEY":51,"FEATURE":" 본 장비는 CMOS 플랫폼 소자 고도화 사업 및  융복합 소자, MEMS, 센서 제작 공정의 미세소자 제작을 위한 최소 선폭 0.35um급 크기의 패턴 공정에 활용되는 반도체 노광 장비입니다. 축소 노광 원리를 이용하여 1/5로 축소 노광이 가능한  장비입니다. ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1695,"ENG_NM":"Power Supply by 2 Items(김수환)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 김수환 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1696,"ENG_NM":"Logic Analyzer(전동석)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1697,"ENG_NM":"Power Supply by 3 Items","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1698,"ENG_NM":"Data Generator","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1699,"ENG_NM":"Logic Analyzer(16903A)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1700,"ENG_NM":"DC Power Supply","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1701,"ENG_NM":"DC Electronic Load","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1702,"ENG_NM":"Digital Hot Plates","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1703,"ENG_NM":"Multi-Tools","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1704,"ENG_NM":"Source Meter Dual Channel","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실  김재하 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1705,"ENG_NM":"DC Power Supply(2220G-30-1)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1706,"ENG_NM":"DC Power Supply(2230G-60-3)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1707,"ENG_NM":"Universal Frequency Counter / Timer","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실  전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1708,"ENG_NM":"Femto/Pico Ammeter","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1709,"ENG_NM":"Multimeter","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1710,"ENG_NM":"Mixed Signal Oscilloscope(전동석)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1711,"ENG_NM":"Power Supply by 2 Items","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1712,"ENG_NM":"DC Power Analyzer","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실  김수환 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1713,"ENG_NM":"Lightwave Measurement System","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1714,"ENG_NM":"LAN/GPIB gateway","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1715,"ENG_NM":"ENA Network Analyzers","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 그룹"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1716,"ENG_NM":"Wide-Bandwidth Oscilloscopes","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1717,"ENG_NM":"Waveform Generator","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1718,"ENG_NM":"AC Power Supply","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1719,"ENG_NM":"Stereo Microscope","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1720,"ENG_NM":"Oscilloscope","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1721,"ENG_NM":"Logic Analyzer(김수환)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 김수환 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1722,"ENG_NM":"Mixed Signal Oscilloscope(최우석)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 최우석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1723,"ENG_NM":"Digital Phosphor Oscilloscope","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1724,"ENG_NM":"Programmable Power Supply(1호기)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1725,"ENG_NM":"Digital Phosphor Oscilloscope Datasheet(1호기)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1726,"ENG_NM":"Logic Analyzer(TLA714)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1727,"ENG_NM":"Waveform Generator Dual Channel","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1728,"ENG_NM":"Power Supply by 2 Items(전동석)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1729,"ENG_NM":"Programmable Power Supply(2호기)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1730,"ENG_NM":"Digital Phosphor Oscilloscope Datasheet(2호기)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1731,"ENG_NM":"Programmable Power Supply(3호기)","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 기타 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1690,"ENG_NM":"오실로스코프 (03)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1692,"ENG_NM":"Power Source","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실 김재하 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1693,"ENG_NM":"Pulse Generator","EQ_ROOM_SKEY":35,"FEATURE":"설계관 측정장비실  전동석 교수실 소속 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1334,"KOR_NM":" RIE Etcher(화합물,08)","ENG_NM":"RIE Etcher (02) (화합물)","EQ_ROOM_SKEY":35,"FEATURE":"실리콘과 화합물 챔버로 분리되어 Si, SiO2, Si3N4, 금속막 etch 공정 진행 가능함(Al, Cr, Au등) \n박막에 따라 식각범위는 다르나 수백 Å ~ 수 ㎛ 까지 임."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1348,"KOR_NM":"2D 표면 단차 측정기 (01)","ENG_NM":"C-Surface Profiler","EQ_ROOM_SKEY":35,"FEATURE":"박막 두께 측정"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1349,"KOR_NM":"2D 표면 단차 측정기 (02)","ENG_NM":"2D Surface Profiler (02)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1350,"KOR_NM":"2D 표면 단차 측정기 (03)","ENG_NM":"Surface Profiler","EQ_ROOM_SKEY":35,"FEATURE":"박막 단차 측정"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1742,"KOR_NM":"2D 표면 단차 측정기 (2)","ENG_NM":"C-Surface Profiler (02)","EQ_ROOM_SKEY":35,"FEATURE":"CMOS구역 내 nano~1,200um 범위의 2D 단차를 측정하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1351,"KOR_NM":"3D 표면 단차 측정기 (02)","ENG_NM":"3D Surface Profiler (02)","EQ_ROOM_SKEY":35,"FEATURE":"비접촉식 3차원 구조 분석 장비로 비접촉식으로 샘플의 3D단차를 측정하고 Real Color Image로 구현할 수 있다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1352,"KOR_NM":"4-포인트 프로브 (02)","ENG_NM":"4-Point Probe (01)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1353,"KOR_NM":"4-포인트 프로브 (03)","ENG_NM":"C-4-Point Probe (01)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1347,"KOR_NM":"광학 현미경 (01)","ENG_NM":"Optical Microscope (01)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1403,"KOR_NM":"광학 현미경 (02)","ENG_NM":"Optical Microscope (02)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1404,"KOR_NM":"광학 현미경 (03)","ENG_NM":"Optical Microscope (03)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1405,"KOR_NM":"광학 현미경 (04)","ENG_NM":"Optical Microscope (04)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1406,"KOR_NM":"광학 현미경 (05)","ENG_NM":"Optical Microscope (05)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1407,"KOR_NM":"광학 현미경 (06)","ENG_NM":"Optical Microscope (06)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1344,"KOR_NM":"금속 산화물 스퍼터 (01) SNTEK","ENG_NM":"Metal-Oxide Sputter (01)","EQ_ROOM_SKEY":35,"FEATURE":"Ar+ 플라즈마를 이용하여 Wafer 표면에 Oxide 계열의 금속을 균일하게 증착할 수 있다. \n증착 가능 물질 : Al2O3","FEATURE_ENG":"Metal-oxide sputtering : Al2O3"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1345,"KOR_NM":"금속 산화물 스퍼터 (02) SRN sputter 2","ENG_NM":"Metal-Oxide Sputter (02)","EQ_ROOM_SKEY":35,"FEATURE":"Metal-oxide target sputtering, Al2O2, IGZO, In2O3, SnO2","FEATURE_ENG":"Metal-oxide target sputtering, Al2O2, IGZO, In2O3, SnO2"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1438,"KOR_NM":"금속 스퍼터 (01)","ENG_NM":"Metal Sputter (03)","EQ_ROOM_SKEY":35,"FEATURE":"증착가능 Metal: Au, Cr(adhesion용)\n1batch 1wafer loading 가능\nsubstrate rotation 가능\nWithin Wafer Uniformity : 4\", 6\" 5% 이내\nWafer Heating: 20℃ ~ 250℃"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1439,"KOR_NM":"금속 스퍼터 (01)","ENG_NM":"Metal Sputter (01)","EQ_ROOM_SKEY":35,"FEATURE":"Ar 플라즈마를 활용한 금속 Sputter"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1440,"KOR_NM":"금속 스퍼터 (02)","ENG_NM":"Metal Sputter (02)","EQ_ROOM_SKEY":35,"FEATURE":"ISRC STD Al, Pure Al, Ni(Silicide), Ti, TiN 박막 증착","FEATURE_ENG":"Thinfilm process : PVD sputtering(ISRC STD Al, Pure Al, Ni(Silicide),  Ti, TiN"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1442,"KOR_NM":"금속 스퍼터 (04)","ENG_NM":"Metal Sputter (04)","EQ_ROOM_SKEY":35,"FEATURE":"Ar 플라즈마를 활용한 금속 Sputter"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1380,"KOR_NM":"깊이 측정 현미경","ENG_NM":"Depth Measurement Microscope","EQ_ROOM_SKEY":35,"FEATURE":"Z-axis 반복정밀도가 뛰어난 장비\n샘플의 패턴이나 반복오차를 1㎛ 이내로 측정 가능"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1346,"KOR_NM":"네트워크분석기 (01)","ENG_NM":"네트워크 분석기","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1339,"KOR_NM":"레이져 홀로그래피 시스템","ENG_NM":"Laser Holography System","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1419,"KOR_NM":"리플렉토미터(Nanospec)","ENG_NM":"Reflectometer (01)","EQ_ROOM_SKEY":35,"FEATURE":"박막 두께 측정\nManual type의 형태"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1735,"KOR_NM":"리플렉토미터(Nanospec)","ENG_NM":"Reflectometer (02)","EQ_ROOM_SKEY":35,"FEATURE":"박막 두께 측정기(Manual  Type)","FEATURE_ENG":"Reflectometer"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1418,"KOR_NM":"리플렉토미터(Nanospec) (01)","ENG_NM":"C-Reflectometer","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1342,"KOR_NM":"마스크리스 리소그래피 시스템 (01)","ENG_NM":"Maskless lithography system (01)","EQ_ROOM_SKEY":35,"FEATURE":"Mask 없이도 GDS File 만으로 패턴을 구현할수 있는 장비이며, Auto/Manual로 Alignment를 진행 할 수 있음.\nLaser diode의10W의 높은 출력으로 빠른 패턴 가능."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1343,"KOR_NM":"마스크리스 리소그래피 시스템 (02)","ENG_NM":"Maskless lithography system (02)","EQ_ROOM_SKEY":35,"FEATURE":"Mask 없이 GDS File 만으로 패턴을 구현할 수 있으며\nAuto/Manual로 Alignment를 진행 할 수 있음"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1736,"KOR_NM":"면저항 측정기","ENG_NM":"4-Point Probe (02)","EQ_ROOM_SKEY":35,"FEATURE":"면저항 측정 장비,\n\nwafer scale (3\",4\",6\"), Dicing 조각 시편(10X10, 20X20, 30X30 mm) 5pt 측정 Recipe 제공"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1737,"KOR_NM":"면저항 측정기","ENG_NM":"C-4-Point Probe (02)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1738,"KOR_NM":"면저항 측정기","ENG_NM":"4-Point Probe (03)","EQ_ROOM_SKEY":35,"FEATURE":"면저항 측정 장비,\n\nwafer scale (3\",4\",6\"), Dicing 조각 시편(10X10, 20X20, 30X30 mm) 5pt 측정 Recipe 제공"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1427,"KOR_NM":"반도체 소자 특성 측정기 (01)","ENG_NM":"SPA-IV (01) ","EQ_ROOM_SKEY":35,"FEATURE":"  Fully automatic/high speed dc characterization of semiconductor d evices, High-resolution, wide-range sourcing and measurement I : 50fA to 100mA; V : 1mV to 100V, Max 1140 measurement and display, points for precise measurement and analysis Four SMU(Source/Monitor Unit) built in, Voltage 4 1/2 digits, Cur rent 4 digits, Voltage measurement input resistance/ Current sour ce output resistance \u003e-10(12) ohm, Max capacitive load : 1000pF"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1428,"KOR_NM":"반도체 소자 특성 측정기 (02)","ENG_NM":"SPA-IV (02) ","EQ_ROOM_SKEY":35,"FEATURE":"  Fully automatic/high speed dc characterization of semiconductor d evices, High-resolution, wide-range sourcing and measurement I : 50fA to 100mA; V : 1mV to 100V, Max 1140 measurement and display, points for precise measurement and analysis Four SMU(Source/Monitor Unit) built in, Voltage 4 1/2 digits, Cur rent 4 digits, Voltage measurement input resistance/ Current sour ce output resistance \u003e-10(12) ohm, Max capacitive load : 1000pF"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1429,"KOR_NM":"반도체 소자 특성 측정기 (03)","ENG_NM":"SPA-IV (03) ","EQ_ROOM_SKEY":35,"FEATURE":"Wafer 상의 다이오드나 트랜지스터, IC, solar cell 등의 dc parameter를 추출하고 graphic display를 통하여 각종 전기적 특성 곡선을 도시, 분석하는데 사용됨.\ndevice design, process design, production line 등의 평가를 수행할 수 있음."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1430,"KOR_NM":"반도체 소자 특성 측정기 (04)","ENG_NM":"SPA-IV/CV (01) ","EQ_ROOM_SKEY":35,"FEATURE":"Semiconductor electrical characteristic Measurement\nI-V(Current versus voltage), C-V(Capacitance versus voltage), etc."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1431,"KOR_NM":"반도체 소자 특성 측정기 (05)","ENG_NM":"SPA-IV/CV (02)","EQ_ROOM_SKEY":35,"FEATURE":"B1500A / M6VC \nI-V(Current-voltage measurement capabilityes)\nC-V(AC Capacitance measurement in multi frequency)\nPI-V(Pulsed I-V Measurement)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1388,"KOR_NM":"비트에러율테스터 (01)","ENG_NM":"고성능비트에러율테스터 (01)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1389,"KOR_NM":"비트에러율테스터 (02)","ENG_NM":"고성능비트에러율테스터 (02)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1390,"KOR_NM":"비트에러율테스터 (03)","ENG_NM":"고성능비트에러율테스터 (03)","EQ_ROOM_SKEY":35,"FEATURE":"유연하고 확장 가능한 플러그인 모듈 설계\n다용도 신호 무결성 측정 기능\n뛰어난 신호 품질 및 Rx 감도 : 반도체 칩의 고정밀도 측정\n초고감도 에러 검출기"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1425,"KOR_NM":"슈퍼 잉크젯 프린터","ENG_NM":"Super Inkjet Printer","EQ_ROOM_SKEY":35,"FEATURE":" Inkjet technology는 nozzle과 기판 사이의 전기력을 이용하여 1㎛ 이하의 초미세패턴을 가능하게 하며, \n 기존 Inkjet에서는 불가능했던 고점성, 고표면장력의 잉크도 사용할 수 있어, 응용의 폭이 더욱 큼. \n 이 Inkjet technology 고해상도 printable electronics, solar-cells, touch panels, microlens-array 등에 사용될 수 있음."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1426,"KOR_NM":"스트레스 측정기","ENG_NM":"Stress Measurement","EQ_ROOM_SKEY":35,"FEATURE":"Laser를 사용하여 파장(650nm)이 film에서 간섭현상을 일으키는 방법으로 전체 기판의 곡률을 측정한다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1456,"KOR_NM":"스펙트럼 분석기 (01)","ENG_NM":"스펙트럼 분석기 (01)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1455,"KOR_NM":"스펙트럼 분석기 (02)","ENG_NM":"스펙트럼 분석기 (02)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1437,"KOR_NM":"스피너 (03)","ENG_NM":"Spin Coater (05) (E-BEAM)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1432,"KOR_NM":"스핀 코터 (01)","ENG_NM":"Spin Coater (01)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1433,"KOR_NM":"스핀 코터 (02)","ENG_NM":"Spin Coater (04)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1435,"KOR_NM":"스핀 코터 (05)","ENG_NM":"Spin Coater (02)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1436,"KOR_NM":"스핀 코터 (06)","ENG_NM":"Spin Coater (03)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1434,"KOR_NM":"스핀 코터 (06)","ENG_NM":"Spin Coater (06)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1441,"KOR_NM":"씨모스 금속 스퍼터 (01) Endura 2","ENG_NM":"C-Metal Sputter (01)","EQ_ROOM_SKEY":35,"FEATURE":"ISRC STD Al, Hot Al, Ni(silicide), Ti(IMP), TiN(MOCVD) 박막 증착","FEATURE_ENG":"Thinfilm PVD process : ISRC STD Al, Hot Al, Ni(silicide), Ti(IMP), TiN(MOCVD) "},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1356,"KOR_NM":"씨모스 원자층 증착 장비 (01)","ENG_NM":"C-ALD (01)","EQ_ROOM_SKEY":35,"FEATURE":"* ALD 방식을 이용한 high-k 유전 박막 및 금속 박막 증착 \n* RTP와 remote plasma를 이용한 PDA(Post Deposition Annealing) 및 표면처리"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1452,"KOR_NM":"씨모스 원자층 증착 장비 (02)","ENG_NM":"C-ALD (02)","EQ_ROOM_SKEY":35,"FEATURE":"SiO2 증착 전용 ALD 장비 (BDIPADS, DIPAS)\nTop lid : Shower head type"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1397,"KOR_NM":"씨모스 원자층 증착 장비 (03)","ENG_NM":"C-ALD (03)","EQ_ROOM_SKEY":35,"FEATURE":"Si3N4 증착 전용 ALD 장비(CSN-2, BTBAS, BDEAS)\nTop lid : Shower head type"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1398,"KOR_NM":"씨모스 원자층 증착 장비 (04)","ENG_NM":"C-ALD (04)","EQ_ROOM_SKEY":35,"FEATURE":"Al2O3 증착 전용 ALD 장비 (TMA)\nTop lid : Traveling wave type"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1359,"KOR_NM":"얼라이너 (01)","ENG_NM":"Aligner (01)","EQ_ROOM_SKEY":35,"FEATURE":" - MA6 Aligner는 고해상도의 사진공정을 위해 설계 되었다. Double side align이 가능하며, 조각 시편에서 6 Inch Wafer까지 공정이 가능할 뿐만 아니라 다른 두께의 비규격 모양의 기판을 다룰 수 있는 뛰어난 융통성을 가진 장비이다. 또한 MA6를 가지고 수동 작업을 행하면 모든 종류의 Contact 프로그램(Vacuum, Low vacuum, Hard, Soft Contact and Proximity)까지 가능하며 X, Y방향 변위이동은 0.1㎛이하이며 광학적 방법으로는 감지가 되지 못하고 6㎜ 두께의 Wafer와 기판까지도 프로세스가 가능하다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1360,"KOR_NM":"얼라이너 (02)","ENG_NM":"Aligner (02)","EQ_ROOM_SKEY":35,"FEATURE":" - MA6 Aligner는 고해상도의 사진공정을 위해 설계 되었다. Double side align이 가능하며, 조각 시편에서 6 Inch Wafer까지 공정이 가능할 뿐만 아니라 다른 두께의 비규격 모양의 기판을 다룰 수 있는 뛰어난 융통성을 가진 장비이다. 또한 MA6를 가지고 수동 작업을 행하면 모든 종류의 Contact 프로그램(Vacuum, Low vacuum, Hard, Soft Contact and Proximity)까지 가능하며 X, Y방향 변위이동은 0.1㎛이하이며 광학적 방법으로는 감지가 되지 못하고 6mm 두께의 Wafer와 기판까지도 프로세스가 가능하다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1384,"KOR_NM":"에너지 분산 X선 분광기","ENG_NM":"EDS","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1385,"KOR_NM":"엘립소미터 (01)","ENG_NM":"C-Ellipsometer (01)","EQ_ROOM_SKEY":35,"FEATURE":"반도체 CMOS, MEMS, Display, BIO, III-V 등 연구에 필요한 단층 및 다층 박막을 광학적인 방법을 사용하여 Sub Å ~ 수 ㎛ 두께 범위의 두께 및 굴절율 등을 측정하는 ellipsometer 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1386,"KOR_NM":"엘립소미터 (02)","ENG_NM":"C-Ellipsometer (02)","EQ_ROOM_SKEY":35,"FEATURE":"반도체 CMOS 등 연구에 필요한 단층 및 다층 박막을 광학적인 방법으로 Sub Å ~ 수 ㎛ 두께 범위의 두께 및 굴절율 등을 측정하는 장비."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1387,"KOR_NM":"엘립소미터 (03)","ENG_NM":"Ellipsometer","EQ_ROOM_SKEY":35,"FEATURE":"반도체 CMOS, MEMS, Display, BIO, III-V 등 연구에 필요한 단층 및 다층 박막을 광학적인 방법을 사용하여 Sub Å ~ 수 ㎛ 두께 범위의 두께 및 굴절율 등을 측정하는 spectroscopic ellipsometer 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1465,"KOR_NM":"열 금속 증착 장비 (01)","ENG_NM":"Thermal Evaporator","EQ_ROOM_SKEY":35,"FEATURE":"Auto / Manual 공정 가능\nThickness monitoring 가능\nSubstrate rotation 가능"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1381,"KOR_NM":"오실로스코프 (01)","ENG_NM":"오실로스코프 (01)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1382,"KOR_NM":"오실로스코프 (02)","ENG_NM":"오실로스코프 (02)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1468,"KOR_NM":"와이어 볼 본딩 장비","ENG_NM":"Wire Ball Bonder","EQ_ROOM_SKEY":35,"FEATURE":"Capillary를 이용하여 공정 완료된 시편과 패드 연결"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1354,"KOR_NM":"원자 힘 현미경 (01)","ENG_NM":"AFM (01)","EQ_ROOM_SKEY":35,"FEATURE":"대기중에서 원자단위 해상도로 3차원적인 표면 이미지 및 특성을 측정함"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1355,"KOR_NM":"원자 힘 현미경 (02)","ENG_NM":"AFM (02)","EQ_ROOM_SKEY":35,"FEATURE":"반도체 재료의 표면 거칠기 및 전기적 특성 측정"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1750,"KOR_NM":"원자층  증착 장비 (04)","ENG_NM":"ALD (04)","EQ_ROOM_SKEY":35,"FEATURE":"오존을 Reactant로 활용한 Thermal ALD(IGZO 증착), source (DADI, TMG, DEZ)","FEATURE_ENG":"O3 Reactant Thermal ALD(IGZO deposition), source (DADI, TMG, DEZ)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1357,"KOR_NM":"원자층 증착 장비 (01)","ENG_NM":"ALD (01)","EQ_ROOM_SKEY":35,"FEATURE":"오존을 Reactant로 활용한 Thermal ALD(Al2O3, HfO2)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1358,"KOR_NM":"원자층 증착 장비 (02)","ENG_NM":"ALD (02)","EQ_ROOM_SKEY":35,"FEATURE":"Ozone 및 Plasma를 활용한 ALD(Al2O3, HfO2, AlN, SiO2, TiN)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1399,"KOR_NM":"원자층 증착 장비 (03)","ENG_NM":"ALD (03)","EQ_ROOM_SKEY":35,"FEATURE":"오존을 Reactant로 활용한 Thermal ALD(HfO2, ZrO2, HZO)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1732,"KOR_NM":"웨이퍼 마커","ENG_NM":"Wafer Marker","EQ_ROOM_SKEY":35,"FEATURE":"Wafer ID  marking system","FEATURE_ENG":"Marking system for wafer IDs"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1469,"KOR_NM":"웨이퍼 절삭기 (02)","ENG_NM":"Dicing Saw (02)","EQ_ROOM_SKEY":35,"FEATURE":"고속회전 스핀들에 절단용 블레이드를 장착하여 웨이퍼 등의 피절단물을 절단하는 장치이다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1470,"KOR_NM":"웨이퍼 절삭기 (03)","ENG_NM":"Dicing Saw (03)","EQ_ROOM_SKEY":35,"FEATURE":"고속 회전Blade로 wafer dicing"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1471,"KOR_NM":"유도 결합 플라즈마 식각 장비 (01)","ENG_NM":"C-ICP Poly Si Etcher (01)","EQ_ROOM_SKEY":35,"FEATURE":"Only 6inch wafer process\n6inch single wafer manual type"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1472,"KOR_NM":"유도 결합 플라즈마 식각 장비 (02)","ENG_NM":"C-ICP Poly Si Etcher (02)","EQ_ROOM_SKEY":35,"FEATURE":"C-Si, Poly Si 박막 etching","FEATURE_ENG":"C-Si etching and Poly-Si etching in 6 inch wafer"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1478,"KOR_NM":"유도 결합 플라즈마 식각 장비 (03)","ENG_NM":"C-ICP Metal Etcher","EQ_ROOM_SKEY":35,"FEATURE":"Metal etcher (AI, Ti, TiN, etc)","FEATURE_ENG":"Metal etch in 6 inch wafer"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1473,"KOR_NM":"유도 결합 플라즈마 식각 장비 (04)","ENG_NM":"C-ICP Dielectric Etcher","EQ_ROOM_SKEY":35,"FEATURE":"Silicon oxide와 Silicon nitride 박막 etching","FEATURE_ENG":"Silicon dioxide thin layer etching and Silicion nitride thin layer etching in 6 inch wafer"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1329,"KOR_NM":"유도 결합 플라즈마 식각 장비 (05)","ENG_NM":"Deep Si Etcher (01)","EQ_ROOM_SKEY":35,"FEATURE":"Deep silicon etching\n4inch single wafer manual type\nOnly piece, 4inch wafer process (bonding process : piece)\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1330,"KOR_NM":"유도 결합 플라즈마 식각 장비 (06)","ENG_NM":"ICP HT Metal Etcher (02)","EQ_ROOM_SKEY":35,"FEATURE":"Only piece, 4inch wafer process\n4inch single wafer manual type\nHigh temperature etching"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1332,"KOR_NM":"유도 결합 플라즈마 식각 장비 (08)","ENG_NM":"ICP Dielectric Etcher (01)","EQ_ROOM_SKEY":35,"FEATURE":"Silicon oxide와 Silicon nitride 박막 etching","FEATURE_ENG":"Silicon dioxide thin layer etching and Silicion nitride thin layer etching in 4 inch wafer"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1400,"KOR_NM":"유도 결합 플라즈마 식각 장비 (13)","ENG_NM":"Deep Si Etcher (02)","EQ_ROOM_SKEY":35,"FEATURE":"Deep silicon etching\n6inch cassette automatic type\nOnly piece~4inch wafer, 6inch wafer process (bonding process : piece~4inch)\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1741,"KOR_NM":"의뢰자 호출","ENG_NM":"의뢰자 호출","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1375,"KOR_NM":"임계치수 측정 주사전자현미경","ENG_NM":"C-CD-SEM","EQ_ROOM_SKEY":35,"FEATURE":"전자들을 전자 렌즈 시스템에 의해 샘플의 표면에 접속되고 이때 전자빔을 화상시스템과 동기화 시켜 시편의 표면에 X-Y로 스캐닝되어 시편에서 발생되는 이차전자가 전류로 증폭되어 CRT와 동기화시켜 이미지를 형성하게 된다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1423,"KOR_NM":"전계 방출형 주사전자현미경 (01)","ENG_NM":"FE-SEM (01)","EQ_ROOM_SKEY":35,"FEATURE":"전자들을 전자 렌즈 시스템에 의해 샘플의 표면에 접속되고 이때 전자빔을 화상시스템과 동기화 시켜 시편의 표면에 x-y로 스캐닝되어 시편에서 발생되는 이차 전자가 전류로 증폭되어 CRT와 동기화시켜 이미지를 형성하게 된다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1424,"KOR_NM":"전계 방출형 주사전자현미경 (02)","ENG_NM":"FE-SEM (02)","EQ_ROOM_SKEY":35,"FEATURE":"전자들을 전자 렌즈 시스템에 의해 샘플의 표면에 접속되고 이때 전자빔을 화상시스템과 동기화 시켜 시편의 표면에 x-y로 스캐닝되어 시편에서 발생되는 이차 전자가 전류로 증폭되어 CRT와 동기화시켜 이미지를 형성하게 된다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1391,"KOR_NM":"전자빔 금속 증착 장비 (01)","ENG_NM":"E-Gun Evaporator (01)","EQ_ROOM_SKEY":35,"FEATURE":"Evaporation 방식을 이용한 금속박막의 증착\n증착 가능 물질 : Pt, Ti, Cr, Cu, Au, Al , Ni"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1392,"KOR_NM":"전자빔 금속 증착 장비 (02)","ENG_NM":"E-Gun Evaporator (02)","EQ_ROOM_SKEY":35,"FEATURE":"Evaporation 방식을 이용한 금속박막의 증착\n증착 가능 물질 : Pt, Ti, Cr, Cu, Au, Al , Ni"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1383,"KOR_NM":"전자빔 리소그래피","ENG_NM":"E-Beam Lithography","EQ_ROOM_SKEY":35,"FEATURE":"Emitter tip에서 나오는 전자들을 Electrostatic lens에서 집속하고 Electro-static deflector를 이용하여 원하는 위치에 \nBeam을 Writing하여 Pattern을 형성한다. JBX-6300FS 장비는 높은 가속전압을 갖는 E-Beam을 이용한 lithography\n시스템으로 가속전압은 100keV 이며, 높은 가속전압을 이용하기 때문에 Proximity effect를 최소화 하고 미세 Pattern 형성이 \n가능 하다는 장점을 지니고 있다. 현재는 Direction writing 전용장비로 사용되고 있다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1336,"KOR_NM":"중전류 이온주입 장비","ENG_NM":"Ion Implanter","EQ_ROOM_SKEY":35,"FEATURE":"본 장비는 반도체 wafer를 고진공(10E-6 Torr 이하) 상태에서 원자 이온을 목표물의 표면을 뚫고 들어갈 만큼 에너지를 갖게하여 웨이퍼 속으로 붕소, 인, 비소 등의 불순물 이온을 균일하게 Doping할 수 있다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1401,"KOR_NM":"파장 분산 엑스선 형광 분석기","ENG_NM":"WD-XRF","EQ_ROOM_SKEY":35,"FEATURE":"- Be부터 U까지 넓은 영역의 원소를 정성, 정량분석하는 파장분산형 형광분석기\n- 박막 및 다층 기판 하면조사 방식으로  두께 및 조성을 분석"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1410,"KOR_NM":"패럴린 막 증착 장비","ENG_NM":"Parylene Deposition System","EQ_ROOM_SKEY":35,"FEATURE":"Parylene막 증착장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1393,"KOR_NM":"퍼니스 (01)","ENG_NM":"C-Furnace (01)","EQ_ROOM_SKEY":35,"FEATURE":"N+ Annealing, Wet oxidation, Reflow Pocl3 doping 등의 4가지 공정이 가능하고 Wet에서는 두꺼운 oxide를 빠르게 \n성장 시킬 수 있다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1394,"KOR_NM":"퍼니스 (02)","ENG_NM":"C-Furnace (02)","EQ_ROOM_SKEY":35,"FEATURE":"Drive-in, Dry oxidation, P+Annealing, Alloy 등의 4가지 공정이 가능하고 Dry 에서는 얇은 Gate oxide를 성장 시킬 수 있다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1631,"KOR_NM":"포토 레지스트 8종","ENG_NM":"Photo Resist_8 Type","EQ_ROOM_SKEY":35,"FEATURE":"포토 레지스트 8종"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1378,"KOR_NM":"플라즈마 화학기상증착기 및 자기 강화 반응성 이온 식각기 (01)","ENG_NM":"PECVD/RIE System","EQ_ROOM_SKEY":35,"FEATURE":"Oxide와 Nitride 박막 etching\nTEOS CVD의 경우는 Oxide의 증착을 하는 Chamber로 짧은 시간에 두꺼운 Oxide를 증착할 수 있다.","FEATURE_ENG":"Etch chamber(A) : Silicon dioxide thin layer etching and Silicion nitride thin layer etching in 4 inch wafer\nCVD chamber(B) : Silicon dioxide thin layer deposition in 4 inch wafer"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1326,"KOR_NM":"홀 효과 측정기","ENG_NM":"Hall Effect Measurement","EQ_ROOM_SKEY":35,"FEATURE":"Hall effect : 금속이나 반도체 등의 고체를 자기장 속에 넣고, 자기장의 방향의 직각으로 고체속 에 Hall 측정.\n반도체 재료의 전기 전도도, 이동도, 캐리어 농도, Si계, InGaAs계, InP계, GaN계 등의 모든 반도체의 N형이나 P형 판정등을 측정하는 장비이며 반도체의 전기적인 특성도 함께 측정이 가능하다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1374,"KOR_NM":"화학적 건식 식각 장비","ENG_NM":"C-Chemical Dry Etcher","EQ_ROOM_SKEY":35,"FEATURE":"Only 6inch process\n6inch single wafer manual type\nIsotropic etching, Corner round etching, Surface treatment"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1362,"KOR_NM":"Acid-Solvent-Wet Station (21)","ENG_NM":"Wet Station (21) (Acid-Solvent)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1364,"KOR_NM":"Acid-Wet Station (01)","ENG_NM":"Wet Station (01) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1365,"KOR_NM":"Acid-Wet Station (02)","ENG_NM":"Wet Station (02) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1366,"KOR_NM":"Acid-Wet Station (03)","ENG_NM":"Wet Station (03) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1367,"KOR_NM":"Acid-Wet Station (04)","ENG_NM":"Wet Station (04) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1369,"KOR_NM":"Acid-Wet Station (12)","ENG_NM":"Wet Station (12) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1370,"KOR_NM":"Acid-Wet Station (13)","ENG_NM":"Wet Station (13) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1371,"KOR_NM":"Acid-Wet Station (14)","ENG_NM":"Wet Station (14) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1479,"KOR_NM":"Acid-Wet Station (15)","ENG_NM":"Wet Station (15) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1475,"KOR_NM":"Acid-Wet Station (16)","ENG_NM":"Wet Station (16) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1373,"KOR_NM":"Acid-Wet Station (17)","ENG_NM":"Wet Station (17) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1368,"KOR_NM":"Acid-Wet Station (WA-5)","ENG_NM":"Wet Station (05) (Acid)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1363,"KOR_NM":"ARBITRARY WAVEFROM GENERATOR (01)","ENG_NM":"Arbitrary Wavefrom Generator","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1331,"KOR_NM":"BMR ICP Etcher (07)","ENG_NM":"ICP Compound Etcher","EQ_ROOM_SKEY":35,"FEATURE":"본 장비는 ICP를 이용하여 Si3N4, SiO2, GaAs, GaN, InP 박막을 Etching하는 장비.\nInP target을 Etching시 담당조교와 사전 협의 필요."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1402,"KOR_NM":"C-Furnace (03)","ENG_NM":"C-Furnace (03)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1377,"KOR_NM":"CMP (02)","ENG_NM":"C-CMP (02)","EQ_ROOM_SKEY":35,"FEATURE":"HDP CVD SiO2 박막을 CMP 할 수 있다."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1324,"KOR_NM":"HDPCVD 1호기(SiO2)","ENG_NM":"C-HDPCVD (01)","EQ_ROOM_SKEY":35,"FEATURE":"SiO2 증착 및 STI (Shallow Trench Isolation) gap-fill process"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1477,"KOR_NM":"HDPCVD 2호기(SiO2)","ENG_NM":"C-HDPCVD (02)","EQ_ROOM_SKEY":35,"FEATURE":"SiO2 증착 및 STI (Shallow Trench Isolation) gap-fill process"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1466,"KOR_NM":"HW-CVD [α-Si, SiN]","ENG_NM":"HWCVD","EQ_ROOM_SKEY":35,"FEATURE":"Ⅲ-V 족 화합물 위에 SiNx 및 ⍺-Si 증착 가능\nChamber 내부에 고온으로 가열된 Tungsten wire를 통해 고진공 유지"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1639,"KOR_NM":"ICP Dielectric Etcher (02)","ENG_NM":"ICP Dielectric Etcher (02)","EQ_ROOM_SKEY":35,"FEATURE":"F Based Gas (O2, Ar, SF6, CF4, CHF3, C4H8)등을 활용한 Dielectric 물질 Etch","FEATURE_ENG":"Dielectric etching using F-based gases (O2, Ar, SF6, CF4, CHF3, C4H8).\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1335,"KOR_NM":"ICP Metal Etcher (01)","ENG_NM":"ICP Metal Etcher (01)","EQ_ROOM_SKEY":35,"FEATURE":"ICP 방식을 이용한 ETCH(AI, Au 등 가능)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1640,"KOR_NM":"ICP Metal Etcher (03)","ENG_NM":"ICP Metal Etcher (03)","EQ_ROOM_SKEY":35,"FEATURE":"Cl Based Gas (O2, Ar, BCl3, Cl2, CH4, H2)을 활용한 Al, TiN 등의 Metal 물질 Etch","FEATURE_ENG":"Metal etching of materials such as Al and TiN using Cl-based gases (O2, Ar, BCl3, Cl2, CH4, H2)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1415,"KOR_NM":"i-line 스테퍼","ENG_NM":"C-i-line Stepper","EQ_ROOM_SKEY":35,"FEATURE":" 분해능 Si : Line 0.25㎛ + space 0.5㎛ \n Oxide, Si3N4 : Line 0.4㎛ + space 0.4㎛\n Metal(AI) : Line 0.45㎛ + space 0.45㎛"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1376,"KOR_NM":"In-Line 임계치수 측정 주사전자현미경","ENG_NM":"CD-SEM","EQ_ROOM_SKEY":35,"FEATURE":"Photo or Etch 공정 후 CD(Critical Dimension) 측정"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1337,"KOR_NM":"LOGIC ANALYZER (01)","ENG_NM":"LOGIC ANALYZER (01)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1338,"KOR_NM":"LOGIC ANALYZER (02)","ENG_NM":"LOGIC ANALYZER (02)","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1474,"KOR_NM":"LPCVD 1호기 [α-Si, MTO, SiN]]","ENG_NM":"C-LPCVD (01)","EQ_ROOM_SKEY":35,"FEATURE":"MTO, α-Si, Low stress Nitride 박막 증착가능"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1341,"KOR_NM":"LPCVD 3호기 [Poly-si, SiN]","ENG_NM":"C-LPCVD (03)","EQ_ROOM_SKEY":35,"FEATURE":"Nitride(최대 0.3㎛), Poly si(최대 0.5㎛), α-Si(최대0.3㎛) 박막 증착가능"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1340,"KOR_NM":"LPCVD(리드)","ENG_NM":"C-LPCVD (04)","EQ_ROOM_SKEY":35,"FEATURE":"N+ dopped poly Si, poly Si, Nitride, MTO 박막 증착 가능"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1395,"KOR_NM":"MEMS Furnace","ENG_NM":"Furnace","EQ_ROOM_SKEY":35,"FEATURE":"Annealing, Wet / Dry oxidation 공정 가능"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1396,"KOR_NM":"Mini Furnace","ENG_NM":"Mini Furnace","EQ_ROOM_SKEY":35,"FEATURE":" Annealing  공정 가능"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1411,"KOR_NM":"OXFORD PECVD [SiO2, Si3N4]","ENG_NM":"PECVD","EQ_ROOM_SKEY":35,"FEATURE":"Plasma를 이용, 낮은 온도(350℃)에서 유전체(SiOx, SixNx)를 증착하는 설비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1379,"KOR_NM":"P5000 4호기 [TEOS-CVD, W-CVD, SiO/SiN ETCH]","ENG_NM":"C-PECVD/RIE System","EQ_ROOM_SKEY":35,"FEATURE":"- A Chamber: Plasma를 이용, TEOS Oxide를 짧은시간 내 두꺼운 증착에 이용\n- B Chamber: 텅스텐 금속박막을 CVD 방식으로 Via 또는 contact Gap-fill 하는데 이용\n- C Chamber: Silicon Oxide, Silicon Nitride 박막 Etching"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1633,"KOR_NM":"P5000 5호기 [W]","ENG_NM":"C-CVD(W) System","EQ_ROOM_SKEY":35,"FEATURE":"BEOL(Back End Of Line) 공정 中 Metal Plug 또는 Contact hall을 위한 텅스텐 금속박막을 \nLPCVD(Low Pressure Vapor Deposition) 방식으로 증착 할 수 있도록 구성된 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1409,"KOR_NM":"PR 건식 애셔 (01)","ENG_NM":"C-Asher","EQ_ROOM_SKEY":35,"FEATURE":"사진 식각에서 사용되는 photoresist를 Dry Ethc 또는 Ion Implant 공정 이후 O2 가스를 이용하여 제거"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1408,"KOR_NM":"PR 건식 애셔 (02)","ENG_NM":"Asher (03)","EQ_ROOM_SKEY":35,"FEATURE":"사진 식각에서 사용되는 Photoresist를 Dry Etch 또는 Ion Implant 공정 이후 O2 가스를 이용하여 제거"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1416,"KOR_NM":"PR 트랙 장비 (01)","ENG_NM":"C-Track","EQ_ROOM_SKEY":35,"FEATURE":"PR coating, Develop, Bake, PEB"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1417,"KOR_NM":"PR 트랙 장비 (02)","ENG_NM":"Track","EQ_ROOM_SKEY":35,"FEATURE":"PR Coating, Develop, BAKE를 Auto 진행"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1413,"KOR_NM":"PR 플라즈마 애셔 (1)","ENG_NM":"Asher (01)","EQ_ROOM_SKEY":35,"FEATURE":"주로 MEMS분야에서 필요한 공정인 등방성 Ashing을 할 수 있는 장비임.\n표면 마이크로 머시닝 기술로 금속 구조물을 제작할 경우 희생층으로 사용되는 Polymer를 선택적으로 제거하는데 사용. \n사진 식각에서 사용되는 Photoresist를 제거하는데 사용."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1414,"KOR_NM":"PR 플라즈마 애셔 (2)","ENG_NM":"Asher (02)","EQ_ROOM_SKEY":35,"FEATURE":"주로 MEMS분야에서 필요한 공정인 등방성 Ashing을 할 수 있는 장비임.\n표면 마이크로 머시닝 기술로 금속 구조물을 제작할 경우 희생층으로 사용되는 Polymer를 선택적으로 제거하는데 사용. \n사진 식각에서 사용되는 Photoresist를 제거하는데 사용."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1412,"KOR_NM":"PULSE GENERATOR (01)","ENG_NM":"Pulse Generator","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1333,"KOR_NM":"RIE Etcher (신소재,09)","ENG_NM":"RIE Etcher (01) (신소재)","EQ_ROOM_SKEY":35,"FEATURE":"실리콘과 화합물 챔버로 분리되어 Si, SiO2, Si3N4, 금속막 etch 공정 진행 가능함(Al, Cr, Au등) \n박막에 따라 식각범위는 다르나 수백 Å ~ 수 ㎛ 까지 임."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1421,"KOR_NM":"RTA (04)","ENG_NM":"RTA (04)","EQ_ROOM_SKEY":35,"FEATURE":" - Ti, Ni silicide를 위한 RTP 공정 진행"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1480,"KOR_NM":"RTA (급속열처리장치_CMOS RTA)","ENG_NM":"C-RTA","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1420,"KOR_NM":"RTA (급속열처리장치_non CMOS)","ENG_NM":"RTA (02)","EQ_ROOM_SKEY":35,"FEATURE":"Vacuum 상태에서 급속한 열처리로 Annealing, Alloy 공정 가능."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1476,"KOR_NM":"RTP (급속열처리장치_전기로)","ENG_NM":"C-RTP","EQ_ROOM_SKEY":35,"FEATURE":"Vacuum 상태에서 급속 열처리 장비."},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1458,"KOR_NM":"Solvent-Wet Staion (06)","ENG_NM":"Wet Station (06) (Solvent)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1459,"KOR_NM":"Solvent-Wet Staion (08)","ENG_NM":"Wet Station (08) (Solvent)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1460,"KOR_NM":"Solvent-Wet Staion (09)","ENG_NM":"Wet Station (09) (Solvent)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1461,"KOR_NM":"Solvent-Wet Staion (10)","ENG_NM":"Wet Station (10) (Solvent)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1462,"KOR_NM":"Solvent-Wet Staion (18)","ENG_NM":"Wet Station (18) (Solvent)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1463,"KOR_NM":"Solvent-Wet Staion (20)","ENG_NM":"Wet Station (20) (Solvent)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1464,"KOR_NM":"Solvent-Wet Staion (24)","ENG_NM":"Wet Station (24) (Solvent)","EQ_ROOM_SKEY":35,"FEATURE":" - 실험실에서 화학반응이나 생물반응을 수행시키기 위한 장치로서 가열 가압 교반 또는 빛이나 촉매를 가하거나 체류시간을 주어서 화학반응을 용이하게 하는 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1443,"KOR_NM":"Spin Rinse Dryer (1)","ENG_NM":"Spin Rinse Dryer (01)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1453,"KOR_NM":"Spin Rinse Dryer (10)","ENG_NM":"Spin Rinse Dryer (10)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1454,"KOR_NM":"Spin Rinse Dryer (11)","ENG_NM":"Spin Rinse Dryer (11)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1754,"KOR_NM":"Spin Rinse Dryer (12)","ENG_NM":"Spin Rinse Dryer (12)","EQ_ROOM_SKEY":35,"FEATURE":"Non-Metal용. Wet-station 작업 후 웨이퍼 건조 장치"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1444,"KOR_NM":"Spin Rinse Dryer (2)","ENG_NM":"Spin Rinse Dryer (02)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1445,"KOR_NM":"Spin Rinse Dryer (3)","ENG_NM":"Spin Rinse Dryer (03)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1446,"KOR_NM":"Spin Rinse Dryer (4)","ENG_NM":"Spin Rinse Dryer (04)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1447,"KOR_NM":"Spin Rinse Dryer (5)","ENG_NM":"Spin Rinse Dryer (05)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1448,"KOR_NM":"Spin Rinse Dryer (6)","ENG_NM":"Spin Rinse Dryer (06)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1449,"KOR_NM":"Spin Rinse Dryer (7)","ENG_NM":"Spin Rinse Dryer (07)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1450,"KOR_NM":"Spin Rinse Dryer (8)","ENG_NM":"Spin Rinse Dryer (08)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1451,"KOR_NM":"Spin Rinse Dryer (9)","ENG_NM":"Spin Rinse Dryer (09)","EQ_ROOM_SKEY":35,"FEATURE":" - Wet-Station 공정 진행 후 Wafer를 한번 더 Rinse를 한 후 Dry하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1457,"KOR_NM":"STI CMP (01)","ENG_NM":"C-CMP (01)","EQ_ROOM_SKEY":35,"FEATURE":"W CMP를 진행하는 장비"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"서울대학교 반도체공동연구소","SINGLE_MODE":true,"EQUIP_SKEY":1467,"KOR_NM":"VECTOR SIGNAL GENERATOR (01)","ENG_NM":"Vector Signal Generator","EQ_ROOM_SKEY":35},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":38,"EQUIP_SKEY":223,"INST_SKEY":1,"KOR_NM":"110GHz modeling sys.","ENG_NM":"110GHz modeling sys.","PHOTO_SKEY":"42","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Freq. Range : 0.1 GHz ~ 110 GHz\r\nㆍ Voltage Range : 100 V (HRSMU), 200 V (HPSMU)\r\nㆍ Current Range : 0.1 A (HRSMU), 1 A (HPSMU)","FEATURE_ENG":"ㆍ Freq. Range : 0.1 GHz ~ 110 GHz\r\nㆍ Voltage Range : 100 V (HRSMU), 200 V (HPSMU)\r\nㆍ Current Range : 0.1 A (HRSMU), 1 A (HPSMU)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":93,"EQUIP_SKEY":174,"KOR_NM":"3D Laser Profiler","ENG_NM":"3D Laser Profiler","PHOTO_SKEY":"97","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Height measurement - Linear scale module : 0.8nm - Height repeatability(50X) : \u003d0.012um\u003cbr /\u003eㆍ Measurement speed - Frame rate : Low(4~120Hz), High(7900Hz)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":89,"EQUIP_SKEY":165,"KOR_NM":"4 point probe","ENG_NM":"4 point probe","PHOTO_SKEY":"93","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Several Measurement mode (S/W) : Auto, Quick, Point, and Manual mode allowed\u003cbr /\u003eㆍ Data analysis : 2D, 3D mapping, data map, etc.","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":37,"EQUIP_SKEY":222,"KOR_NM":"67GHz modeling sys.","ENG_NM":"67GHz modeling sys.","PHOTO_SKEY":"41","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Freq. Range : 0.1 GHz ~ 67 GHz\nㆍ Voltage Range : 100 V (HRSMU), 200 V (HPSMU)\nㆍ Current Range : 0.1 A (HRSMU), 1 A (HPSMU)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":115,"EQUIP_SKEY":357,"KOR_NM":"8 inch Wafer Automatic Sheet Resistance Measurement System","ENG_NM":"8 inch Wafer Automatic Sheet Resistance Measurement System","PHOTO_SKEY":"119","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Measuring Range : 1mohm/sq ~ 1Gohm/sq\r\nㆍ Current Range : 10nA to 100mA\r\nㆍ Measurement accuracy : 1% (@23℃)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1630,"KOR_NM":"리프트오프용 이빔증착기","ENG_NM":"리프트오프용 이빔증착기","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1762,"KOR_NM":"초고주파 플라즈마 식각장비(Microwave Plasma Asher)","ENG_NM":"초고주파 플라즈마 식각장비(Microwave Plasma Asher)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":908,"EQUIP_SKEY":517,"KOR_NM":"Acid / Organic wet station","ENG_NM":"Acid / Organic wet station","PHOTO_SKEY":"893","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ SPM cleaning - H2SO4 : H2O2 \u003d 6 : 1 - Temperature : ~100℃\r\nㆍ Organic cleaning - Temperature : ~80℃","FEATURE_ENG":"ㆍ SPM cleaning \r\n- H2SO4 : H2O2 \u003d 6 : 1\r\n\r\n- Temperature : ~100℃\r\n\r\nㆍ Organic cleaning\r\n- Temperature : ~80℃\r\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":802,"EQUIP_SKEY":185,"KOR_NM":"Acid Wet-Bench(R\u0026D)","ENG_NM":"Acid Wet-Bench(R\u0026D)","PHOTO_SKEY":"787","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ BOE 6:1 SiO etch rate : 67nm/min\u003cbr /\u003eㆍ BOE 6:1 SiN etch rate : 36nm/min\u003cbr /\u003eㆍ BOE 30:1 Ti etch rate : 45nm/min\u003cbr /\u003eㆍ Au etchant Au etch rate : 220nm/min\u003cbr /\u003eㆍ Cu etchant : 1200nm/min\u003cbr /\u003eㆍ Cr etchant : 120nm/min\u003cbr /\u003eㆍ ITO etchant : 220nm/min\u003cbr /\u003eㆍ Al etchant : 49nm/min\u003cbr /\u003eㆍ HCl, H3PO4, HF 보유","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":811,"EQUIP_SKEY":274,"KOR_NM":"Acid Wet-station(산업화)","ENG_NM":"Acid Wet-station(산업화)","PHOTO_SKEY":"796","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ 증착 전 native oxide remove\r\nㆍHF 1:100 SiO etch rate : 250nm/min","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":838,"EQUIP_SKEY":338,"KOR_NM":"Acid Wet-station(R\u0026D)","ENG_NM":"Acid Wet-station(R\u0026D)","PHOTO_SKEY":"823","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ 증착, Photo 전 native oxide 제거(HF, BOE 6:1, BOE30:1)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1293,"KOR_NM":"AFM I -\u003e FC-AM30으로 변경","ENG_NM":"AFM I -\u003e FC-AM30으로 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":29,"EQUIP_SKEY":213,"KOR_NM":"AFM I, II (model: XE100, Park systems)","ENG_NM":"AFM I, II (model: XE100, Park systems)","PHOTO_SKEY":"33","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Non-Contact mode\u003cbr /\u003eㆍ Contact mode\u003cbr /\u003eㆍ Tapping mode","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":30,"EQUIP_SKEY":214,"KOR_NM":"AFM I, II (model: XE100, Park systems)","ENG_NM":"AFM I, II (model: XE100, Park systems)","PHOTO_SKEY":"34","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Non-Contact mode\u003cbr /\u003eㆍ Contact mode\u003cbr /\u003eㆍ Tapping mode","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":31,"EQUIP_SKEY":215,"KOR_NM":"AFM III (model: XE150, 6인치 가능)","ENG_NM":"AFM III (model: XE150, 6인치 가능)","PHOTO_SKEY":"35","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Non-Contact mode\u003cbr /\u003eㆍ Contact mode\u003cbr /\u003eㆍ Tapping mode","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":803,"EQUIP_SKEY":186,"KOR_NM":"Alkali Wet-Bench(R\u0026D)","ENG_NM":"Alkali Wet-Bench(R\u0026D)","PHOTO_SKEY":"788","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ KOH 1:3 80℃, Si etch rate : 1.1m/min\u003cbr /\u003eㆍ SC-1 cleaning, NH4OH : H2O2 : DIW \u003d 1:1:5 75℃ 10min\u003cbr /\u003eㆍSTR-F 60℃ 2hr(도금용 PR striper, ex)THB151N, JSR111N)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1316,"KOR_NM":"Alkali Wet-station(foundry)","ENG_NM":"Alkali Wet-station(foundry)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":841,"EQUIP_SKEY":339,"KOR_NM":"Alkali Wet-station(R\u0026D)","ENG_NM":"Alkali Wet-station(R\u0026D)","PHOTO_SKEY":"826","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ KOH : DIW \u003d 1:3 80℃ Si etch rate : 1.1m/min","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":44,"EQUIP_SKEY":320,"KOR_NM":"Analytic STEM","ENG_NM":"Analytic STEM","PHOTO_SKEY":"48","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Microstructure :BF,DF,HRTEM,HAADF-STEM, 3D tomography\nㆍ Crystallography:SAED,CBED\nㆍ Elemental analysis:EDS, EELS (point, line, elemental mapping)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":797,"EQUIP_SKEY":150,"KOR_NM":"Asher(DAS2000)","ENG_NM":"Asher(DAS2000)","PHOTO_SKEY":"782","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":865,"EQUIP_SKEY":343,"KOR_NM":"Atomic Layer Deposition - Insulators","ENG_NM":"Atomic Layer Deposition - Insulators","PHOTO_SKEY":"850","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ ALD Process - Al2O3, HfO2, ZrO2, Ta2O5\r\nㆍ GPC(Growth Per Cycle) - 0.6 ~ 1.2 Å/cycle\r\nㆍ Thickness Uniformity - WIW  WtW :  3% @ 1-sigma\r\nㆍ Step coverage : 90%","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":862,"EQUIP_SKEY":342,"KOR_NM":"Atomic Layer Deposition - Metals","ENG_NM":"Atomic Layer Deposition - Metals","PHOTO_SKEY":"847","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ ALD Process - TiN, TaN, Co, Ru\r\nㆍ GPC(Growth Per Cycle) - 0.6 ~ 2.6 Å/cycle\r\nㆍ Thickness Uniformity - WIW  WtW :  10% @ 1-sigma\r\nㆍ Step coverage : 90%","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":810,"EQUIP_SKEY":266,"KOR_NM":"Au Plating Machine II (backside)","ENG_NM":"Au Plating Machine II (backside)","PHOTO_SKEY":"795","EQ_ROOM_SKEY":1,"FEATURE":"ㆍThickness uniformity :  10 %","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":112,"EQUIP_SKEY":353,"KOR_NM":"Auto Precision Grinding and Polishing System","ENG_NM":"Auto Precision Grinding and Polishing System","PHOTO_SKEY":"116","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ SiC 재료 제거율(Material Removal Rate; MRR) - 5㎛/min (거친 연마 모듈 기준)\r\nㆍ 표면 거칠기(산술평균 거칠기; Ra) - 거친 연마: 6.6nm - 미세 연마: 1.7nm\r\nㆍ 두께 평탄도(Parallelism): 2㎛","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":118,"EQUIP_SKEY":359,"KOR_NM":"Auto Wet Station","ENG_NM":"Auto Wet Station","PHOTO_SKEY":"122","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ HF : DIW \u003d 1:100\r\nㆍ HCl : DIW \u003d 1:10\r\nㆍ QDR rinsing (N2 bubble)\r\nㆍ Final rinsing - Resistivity : 18.1 MΩ-㎝","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":54,"EQUIP_SKEY":277,"KOR_NM":"Automated Mask Aligner I ","ENG_NM":"Automated Mask Aligner I ","PHOTO_SKEY":"58","EQ_ROOM_SKEY":1,"FEATURE":"1. Non-contact pre-alignment avoids wafer damage\n2. Intensity uniformity  2.5 %\n3. Alignment gap up to 300 m (TSA), up to 2500 m (BSA)\n4. Achievable resolution depends on contact quality, optics type, wafer size, wafer flatness, resist type, clean room class and, therefore, might vary for different processes (1 m thick resist, lines  spaces)Positive 2um thick 2.5 m and 3 m lines and spaces","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":56,"EQUIP_SKEY":280,"KOR_NM":"Automated Mask Aligner II","ENG_NM":"Automated Mask Aligner II","PHOTO_SKEY":"60","EQ_ROOM_SKEY":1,"FEATURE":"1. Non-contact pre-alignment avoids wafer damage2. Intensity uniformity  2.5 %3. Alignment gap up to 300 m (TSA), up to 2500 m (BSA)4. Achievable resolution depends on contact quality, optics type, wafer size, wafer flatness, resist type, clean room class and, therefore, might vary for different processes (1 m thick resist, lines  spaces)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":812,"EQUIP_SKEY":283,"KOR_NM":"Automated Mask Aligner IV (8 inch)","ENG_NM":"Automated Mask Aligner IV (8 inch)","PHOTO_SKEY":"797","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Resolution  - PR : GXR601 (14CP) 1um / Hard Contact 모드","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":868,"EQUIP_SKEY":348,"KOR_NM":"Automatic Elipsometer","ENG_NM":"Automatic Elipsometer","PHOTO_SKEY":"853","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Measurement thickness: - 1Å ~ 8 (@SiO2)\r\nㆍ Measurement accuracy: - 1% (@SiO2 2nm/Si)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":64,"EQUIP_SKEY":291,"KOR_NM":"Box Furnace","ENG_NM":"Box Furnace","PHOTO_SKEY":"68","EQ_ROOM_SKEY":1,"FEATURE":"1. 온도별 N2,O2 지정 가능 (30℃800℃)2. 공정범위 : 30℃800℃(2℃)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1321,"KOR_NM":"Breaker","ENG_NM":"Breaker","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":60,"EQUIP_SKEY":285,"KOR_NM":"CD SEM","ENG_NM":"CD-SEM I (9260)","PHOTO_SKEY":"64","EQ_ROOM_SKEY":1,"FEATURE":"High measurement precision and improved sample throughput\u003cbr /\u003eㆍ Min. measurement resolution : 150nm\u003cbr /\u003eㆍ CD uniformity : 5nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":61,"EQUIP_SKEY":286,"KOR_NM":"CD-SEM II (8820)","ENG_NM":"CD-SEM II (8820)","PHOTO_SKEY":"65","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Wafer Size : 8inch\r\r\nㆍ Measurement : Cursor and line profile Measurement\r\r\nㆍ CD measurement range : 0.1 ~ 10um\r\r\nㆍ Secondary electron image resolution :5nm (50Å)(atacceleratingvoltageof 0.8kV )  (with reference specimen dedicated for resolution measurement)\r\r\nㆍ Magnification : ⅹ1000toⅹ200,000(SEMimage) About ⅹ110 ( optical microscope image )\r\r\nㆍ Movement range : X and Y 0 to 200mm  Electron gun Schottky emission type (having high brigntness and long service life)\r\r\nㆍ Accelerating voltage Lens system : 700 to 1300V (variable in 10V steps)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1281,"KOR_NM":"CL(Cathodoluminescence) System","ENG_NM":"CL(Cathodoluminescence) System","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1308,"KOR_NM":"CL(Cathodoluminescence) System -\u003e FC-CL10으로 변경","ENG_NM":"CL(Cathodoluminescence) System -\u003e FC-CL10으로 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":55,"EQUIP_SKEY":278,"KOR_NM":"Contact Aligner I (Manual)","ENG_NM":"Contact Aligner I (Manual)","PHOTO_SKEY":"59","EQ_ROOM_SKEY":1,"FEATURE":"1. Top-side / bottom-side alignment down to  0.5 m /  2 m2. Soft-, hard-, vacuum contact and proximity exposure3. Movement Range : X축 32 - 150 mm, Y축:  70 mm4. Exposure Optics : Uniformity  4%5. Rotation:   3.0Negative 2um sidewall with ametal-compatible lift-off resistPositive 1 m thick resist with 2.6 mresolution exposed","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1307,"KOR_NM":"Contact Aligner II (Manual)","ENG_NM":"Contact Aligner II (Manual)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":59,"EQUIP_SKEY":284,"KOR_NM":"Contact Aligner VIII","ENG_NM":"Contact Aligner VIII","PHOTO_SKEY":"63","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Process Resolution (1.2㎛ resist thickness) -Soft contact mode :  2.5m (8inch :  3 m)\r\nㆍ Alignment system -Top Side Alignment Accuracy :   1 ㎛ -Bottom Side Alignment Accuracy :   1.5 ㎛","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":68,"EQUIP_SKEY":299,"KOR_NM":"Convection oven I ","ENG_NM":"Convection oven I ","PHOTO_SKEY":"72","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Very Thick Resist or Polymer Bake  (or Curing) Process is available\nㆍ Setting Temp. Uniformity - Oven : 1℃ at 100℃ - Circulator : 0.1℃ at 50 ℃","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":69,"EQUIP_SKEY":300,"KOR_NM":"Convection oven II","ENG_NM":"Convection oven II","PHOTO_SKEY":"73","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Very Thick Resist or Polymer Bake  (or Curing) Process is available\nㆍ Setting Temp. Uniformity - Oven : 1℃ at 100℃ - Circulator : 0.1℃ at 50 ℃","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":96,"EQUIP_SKEY":180,"KOR_NM":"Cu \u0026 Ni Plating Machine (R\u0026D)","ENG_NM":"Cu \u0026 Ni Plating Machine (R\u0026D)","PHOTO_SKEY":"100","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Plating material : Cu ■ Cu Plating current density : 0.5~4A/dm2\u003cbr /\u003eㆍ Uniformity (WIW) : 15%@wafer edge_5~10mm\u003cbr /\u003eㆍ Uniformity (WTW) : 15%@wafer edge_5~10mm※ Cu filling성 (Bottom up)※ Internal stress※ Cu plating on Silicon wafer","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":101,"EQUIP_SKEY":346,"KOR_NM":"Cu CMP","ENG_NM":"Cu CMP","PHOTO_SKEY":"105","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Removal Rate   5000 Å/min @ Cu\nㆍ non-uniformity : 5%(Cu)\nㆍ Wafer to wafer non-uniformity : 3% 이하","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":870,"EQUIP_SKEY":349,"KOR_NM":"Cu Plating Machine for Damascene","ENG_NM":"Cu Plating Machine for Damascene","PHOTO_SKEY":"855","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Gap Fill Minimum Pattern Size : - Damascene : 60nm - TSV : 1um\n\nㆍ Aspect Ratio : ~ 3\n\nㆍ Within Wafer Uniformity : 6%\n\nㆍ Wafer to Wafer Uniformity : 3%","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":866,"EQUIP_SKEY":347,"KOR_NM":"DC measurement system for high power devices","ENG_NM":"DC measurement system for high power devices","PHOTO_SKEY":"851","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Voltage Range : 3000 V @ 4 mA\n\nㆍ Current Range : 1 A (DC), 20 A (Pulse)\n\nㆍ Freq. Range for CV : 1 kHz ~ 5 MHz","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1282,"KOR_NM":"Deep etcher VI(R\u0026D)","ENG_NM":"Deep etcher VI(R\u0026D)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":906,"EQUIP_SKEY":516,"KOR_NM":"Defect-Review SEM","ENG_NM":"Defect-Review SEM","PHOTO_SKEY":"891","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Automatic Defect Review - Minimum detectable defect size : 0.035 ㎛ - Detection rate : 90% or more\r\nㆍ Automatic Defect Classification - Correct classification rate : 85% or more - Maximum number of categories : 50 categories/recipe","FEATURE_ENG":"ㆍ Automatic Defect Review\r\n- Minimum detectable defect size : 0.035 ㎛\r\n- Detection rate : 90% or moreㆍ Automatic Defect Classification\r\n- Correct classification rate : 85% or more\r\n- Maximum number of categories : 50 categories/recipe\r\nㆍ Automatic Defect Review\r\n- Minimum detectable defect size : 0.035 ㎛\r\n- Detection rate : 90% or moreㆍ Automatic Defect Classification\r\n- Correct classification rate : 85% or more\r\n- Maximum number of categories : 50 categories/recipe\r\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":78,"EQUIP_SKEY":145,"KOR_NM":"Develop Wet-Bench(Litho)","ENG_NM":"Develop Wet-Bench(Litho)","PHOTO_SKEY":"82","EQ_ROOM_SKEY":1,"FEATURE":"1. Pieces, 2, 4, 6 wafer Processing\n2. Process Temp. : RT\n3. Process : Manual Develop(Dipping Process)\n4. Develop unit : (TMAH 2.38%) / AZ300MIF5. PR strip","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1286,"KOR_NM":"Dicing Machine I","ENG_NM":"Dicing Machine I","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":22,"EQUIP_SKEY":195,"KOR_NM":"Dicing Machine II","ENG_NM":"Dicing Machine II","PHOTO_SKEY":"26","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Substrate : Quartz/Glass/Sapphire/SiC - KERF : Blade width x 100~120%      (using blade width 200 um) - Chipping : Max. ~20 um\u003cbr /\u003eㆍ Substrate : Si(1T) - KERF : Blade width x 100~120%     (using blade width 64um) - Chipping : Max. ~10 um","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":23,"EQUIP_SKEY":196,"KOR_NM":"Dicing Machine III","ENG_NM":"Dicing Machine III","PHOTO_SKEY":"27","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Substrate : Quartz/Glass - KERF : Blade width x 100~120%      (using blade width 200 um) - Chipping : Max. ~20 um","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":24,"EQUIP_SKEY":197,"KOR_NM":"Dicing Machine IV","ENG_NM":"Dicing Machine IV","PHOTO_SKEY":"28","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Substrate : Si - KERF : Blade width x 100~120%      (using blade width 33um) - Chipping : Max. ~10 um\u003cbr /\u003eㆍ Substrate : GaAs - KERF : Blade width x 100~120%     (using blade width 28um) - Chipping : Max. ~10 um","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":935,"EQUIP_SKEY":193,"KOR_NM":"Die-bonder (Back-end)","ENG_NM":"Die-bonder (Back-end)","PHOTO_SKEY":"920","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1295,"KOR_NM":"Doping profiler(ECV) -\u003e FE-DP10 변경","ENG_NM":"Doping profiler(ECV) -\u003e FE-DP10 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1309,"KOR_NM":"E-beam curing machine","ENG_NM":"E-beam curing machine","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":48,"EQUIP_SKEY":248,"KOR_NM":"E-beam evaporator (산업화) I","ENG_NM":"E-beam evaporator (산업화) I","PHOTO_SKEY":"52","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ System configuration - Beam Source: Pt, Au, Ag, Cu, Al, In, Sn, Cr, Ti, Ni, NiCr, Ge, Si, Mo etc\r\nㆍ Thickness Uniformity (within wafer) -  5% (2,4,6,8 wf),  10% (12wf)\r\nㆍ Dep. Rate: 1~5A/s","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":49,"EQUIP_SKEY":249,"KOR_NM":"E-beam evaporator (산업화) II","ENG_NM":"E-beam evaporator (산업화) II","PHOTO_SKEY":"53","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ System configuration - Beam Source: Pt, Au, Ag, Al, In, Sn, Cr, Ti, Ni, NiCr, Ge, Si, Mo etc.\r\nㆍ Thickness Uniformity (within wafer) -  5% (2,4,6 wf)\r\nㆍ Dep. Rate: 1~5A/s\r\nㆍ Lift off available CD size :  100 nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":85,"EQUIP_SKEY":160,"KOR_NM":"E-beam evaporator (R\u0026D) I","ENG_NM":"E-beam evaporator (R\u0026D) I","PHOTO_SKEY":"89","EQ_ROOM_SKEY":1,"FEATURE":"ㆍThickness uniformity :  10 %\u003cbr /\u003eㆍTi or Cr for adhesion  5 nm\u003cbr /\u003eㆍAg, Al, Au, Cu, In, Sn  2 um\u003cbr /\u003eㆍTi, Cr, Ni, Pt  200 nm\u003cbr /\u003eㆍMo, Nb  50 nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":87,"EQUIP_SKEY":162,"KOR_NM":"E-beam evaporator (R\u0026D) III","ENG_NM":"E-beam evaporator (R\u0026D) III","PHOTO_SKEY":"91","EQ_ROOM_SKEY":1,"FEATURE":"ㆍThickness uniformity :  10 %\u003cbr /\u003eㆍAl2O3, ITO, SiO2, TiO2  1 um","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1296,"KOR_NM":"E-beam evaporator II (R\u0026D)","ENG_NM":"E-beam evaporator II (R\u0026D)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":62,"EQUIP_SKEY":289,"KOR_NM":"E-beam lithography I (9300)","ENG_NM":"E-beam lithography I (9300)","PHOTO_SKEY":"66","EQ_ROOM_SKEY":1,"FEATURE":"Fabrication of nanoscale pattern with E-Beam Lithography\nㆍ High resolution patterning using ZEP\nㆍ Bi-layer lift-off process\nㆍ EBL Patterning of non-conductive substrates\nㆍ Align pattern to existing structure on chip  - Accurate measurement of mark location\nㆍ Layer alignment without stitching\nㆍ Min. line width : 20nm\nㆍ Align accuracy : 25nm","FEATURE_ENG":"Fabrication of nanoscale pattern with E-Beam Lithography\n\nㆍ High resolution patterning using ZEP\n\nㆍ Bi-layer lift-off process\n\nㆍ EBL Patterning of non-conductive substrates\n\nㆍ Align pattern to existing structure on chip  - Accurate measurement of mark location\n\nㆍ Layer alignment without stitching\n\nㆍ Min. line width : 20nmㆍ Align accuracy : 25nm\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1310,"KOR_NM":"E-beam lithography II (6000)","ENG_NM":"E-beam lithography II (6000)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":814,"EQUIP_SKEY":325,"KOR_NM":"Electrochemical CV Profiler","ENG_NM":"Electrochemical CV Profiler","PHOTO_SKEY":"799","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Capacity : pieces ~ 6 inch\r\nㆍ Measurable carrier concentrations : 1015 ~ 1021 ㎤\r\nㆍ Depth resolution : 2 nm\r\nㆍ Measurement temperature : 300 K","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":894,"EQUIP_SKEY":355,"KOR_NM":"Endura sputter","ENG_NM":"Endura sputter","PHOTO_SKEY":"879","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ IMP Ti Process (200℃) - Depo Rate: ~ 700Å/min - Uniformity WIW  6%  WtW :  4% @ 1-sigma - Resistivity : ~70 Ω-㎝ - Side Step Coverage: 10 % - Bottom Step Coverage:  50%\r\nㆍ MOCVD TiN Process (400℃) - Resistivity : ~240 Ω-㎝ @ 2x50Å - Side/Bottom Step coverage :  85%\r\nㆍ SIP EnCoRe Cu Process (R.T) - Uniformity WIW  5%  WtW :  3% @ 1-sigma - Resistivity : ~3.0 Ω-㎝ - Side Step Coverage: 5 % - Bottom Step Coverage:  15%\r\nㆍ SIP EnCoRe Ta(N) Process (R.T) -Uniformity WIW  6%  WtW :  4% @ 1-sigma - Ta Resistivity : ~200 Ω-㎝ - TaN Resistivity : ~300 Ω-㎝ - Side Step Coverage: 10 % - Bottom Step Coverage:  35%\r\nㆍ Pre-clean Process - Etch Rate : 5.0/sec","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":114,"EQUIP_SKEY":356,"KOR_NM":"Evatec sputter","ENG_NM":"Evatec sputter","PHOTO_SKEY":"118","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Soft Etch Process - Uniformity WIW  6%  WtW :  4% @ 1-sigma - Etch Rate : ~2.0/sec\r\nㆍ Ti Process - Depo Rate: ~ 700Å/min - Uniformity WIW  6%  WtW :  4% @ 1-sigma - Resistivity : ~90 Ω-㎝\r\nㆍ TiN Process - Uniformity WIW  6%  WtW :  4% @ 1-sigma - Resistivity : ~200 Ω-㎝\r\nㆍ Al(0.5%Cu) Process -Uniformity WIW  6%  WtW :  4% @ 1-sigma - Resistivity : ~2.9 Ω-㎝","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":42,"EQUIP_SKEY":316,"KOR_NM":"FE SEM I","ENG_NM":"FE SEM I","PHOTO_SKEY":"46","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1280,"KOR_NM":"FE SEM II","ENG_NM":"FE SEM II","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1289,"KOR_NM":"FE SEM II -\u003e FC-SM20으로 변경","ENG_NM":"FE SEM II -\u003e FC-SM20으로 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":43,"EQUIP_SKEY":318,"KOR_NM":"FE SEM III","ENG_NM":"FE SEM III","PHOTO_SKEY":"47","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1047,"KOR_NM":"FE SEM IV","ENG_NM":"FE SEM IV","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":909,"EQUIP_SKEY":350,"KOR_NM":"FIB Ⅲ (model : Helios 5 UX, Thermofisher)","ENG_NM":"FIB Ⅲ (model : Helios 5 UX, Thermofisher)","PHOTO_SKEY":"894","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Image Resolution - Electron-beam : 0.7 nm @ 15 keV  1.4 nm @ 1 keV - Ion-beam : 3 nm @ 30 keV\r\nㆍ Automated TEM sample preparation\r\nㆍ Automated serial sectioning and imaging","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":33,"EQUIP_SKEY":217,"KOR_NM":"FIB I (model: Nova 600, FEI사)","ENG_NM":"FIB I (model: Nova 600, FEI사)","PHOTO_SKEY":"37","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Image resolution -Electron-beam : -1.1 nm @ 15 kV, - Ion-beam : 7 nm @ 30 kV","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":34,"EQUIP_SKEY":218,"KOR_NM":"FIB II (model: Quanta 3D FEG, FEI)","ENG_NM":"FIB II (model: Quanta 3D FEG, FEI)","PHOTO_SKEY":"38","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Image resolution -Electron-beam : - 1.2 nm @ 15 kV, - Ion-beam : 7 nm @ 30 kV","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1311,"KOR_NM":"FIB-\u003eFC-FI10으로 변경","ENG_NM":"FIB-\u003eFC-FI10으로 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":35,"EQUIP_SKEY":219,"KOR_NM":"FTIR","ENG_NM":"FTIR","PHOTO_SKEY":"39","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":897,"EQUIP_SKEY":509,"KOR_NM":"Furnace","ENG_NM":"Furnace","PHOTO_SKEY":"882","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Temp Accuracy :300 ℃ ~ 500 ℃ (3.0℃, In flat Zone)\r\nㆍ Process Gas :N2, H2, O2","FEATURE_ENG":"ㆍ Temp Accuracy :300 ℃ ~ 500 ℃ (3.0℃, In flat Zone)\r\nㆍ Process Gas :N2, H2, O2"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":815,"EQUIP_SKEY":326,"KOR_NM":"Hall effect Measurement System","ENG_NM":"Hall effect Measurement System","PHOTO_SKEY":"800","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Permanent magent with field reversal by magnet rotation\r\nㆍ Field strength of 0.32 T nominal  1% of marked value\r\nㆍ Magnet stability : 0.1 %\r\nㆍ Pole gap : 33.4 mm\r\nㆍ Max measurement diameter : 25 mm\r\nㆍ Measurement temp. range : 10 ~ 500 K","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1317,"KOR_NM":"Hall Measurement System -\u003e FE-HA10 변경","ENG_NM":"Hall Measurement System -\u003e FE-HA10 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":904,"EQUIP_SKEY":515,"KOR_NM":"HDP-CVD","ENG_NM":"HDP-CVD","PHOTO_SKEY":"889","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Process : IMD Deposition (USG) - Dep-Etch-Dep Method - Deposition thickness : up to 2㎛ - Wafer Temperature : 370~500℃ - Deposition Rate : 4000400A/min - Refractive Index : 1.4600.01 (@ THK：1000A, 파장: 632nm) - Gap-fill : Pattern Wafer Void Free - Uniformity 5% (within wafer thickness(@49 points, EE 5mm)  wafer-to-wafer (@ 5wafers)\r\nㆍ Process : IMD Deposition (FSG) - Dep Rate : 3000300A/min - Sputter Rate : 1300200A/min - Film Uniformity :  5% (within wafer thickness(@41 points, EE 5mm)  wafer-to-wafer (@ 5wafers) - Refractive Index : 1.440.01 (@ THK：1000A, 파장: 632nm) - Gap-fill : Pattern Wafer Void Free - F concentration : 4.01.0wt%(@ Film THK：6000A)","FEATURE_ENG":"ㆍ Process : IMD Deposition (USG)\r\n- Dep-Etch-Dep Method\r\n- Deposition thickness : up to 2㎛\r\n- Wafer Temperature : 370~500℃\r\n- Deposition Rate : 4000400A/min\r\n- Refractive Index : 1.4600.01 (@ THK：1000A, 파장: 632nm) - Gap-fill : Pattern Wafer Void Free \r\n- Uniformity 5% (within wafer thickness(@49 points, EE 5mm)  wafer-to-wafer (@ 5wafers)\r\nㆍ Process : IMD Deposition (FSG)\r\n- Dep Rate : 3000300A/min\r\n- Sputter Rate : 1300200A/min\r\n- Film Uniformity :  5% (within wafer thickness(@41 points, EE 5mm)  wafer-to-wafer (@ 5wafers) \r\n- Refractive Index : 1.440.01 (@ THK：1000A, 파장: 632nm)\r\n- Gap-fill : Pattern Wafer Void Free \r\n F concentration : 4.01.0wt%(@ Film THK：6000A)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":95,"EQUIP_SKEY":179,"KOR_NM":"HDP-CVD (R\u0026D)","ENG_NM":"HDP-CVD (R\u0026D)","PHOTO_SKEY":"99","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ SiO2 - Depo Rate : 600Å/min@250 ℃ - Uniformity : WIW3% ,WTW3% (6inch)         WIW5% ,WTW5% (8inch) - Refractive Index : 1.460.03\u003cbr /\u003eㆍ Si3N4 - Depo Rate : 700Å/min @250 ℃ - Uniformity : WIW3% ,WTW3% (6inch)         WIW5% ,WTW5% (8inch) - Refractive Index : 2.00.03","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":25,"EQUIP_SKEY":199,"KOR_NM":"Horizontal Grinding M/C","ENG_NM":"Horizontal Grinding M/C","PHOTO_SKEY":"29","EQ_ROOM_SKEY":1,"FEATURE":"- porosity spec .: +/- 25um- wafer Max : ~200um 까지- wafer Min : 최소 40um~ 부터","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1045,"KOR_NM":"Hot Plate Baker I","ENG_NM":"Hot Plate Baker I","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1625,"KOR_NM":"Hot Plate Baker II","ENG_NM":"Hot Plate Baker II","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":45,"EQUIP_SKEY":321,"KOR_NM":"HR-TEM II","ENG_NM":"HR-TEM II","PHOTO_SKEY":"49","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Microstructure :BF,DF,HRTEM, STEM\r\nㆍ Crystallography:SAED,CBED\r\nㆍ Elemental analysis:EDS","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":938,"EQUIP_SKEY":251,"KOR_NM":"ICP etcher (산업화) I","ENG_NM":"ICP etcher (산업화) I","PHOTO_SKEY":"923","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":939,"EQUIP_SKEY":252,"KOR_NM":"ICP etcher (산업화) II","ENG_NM":"ICP etcher (산업화) II","PHOTO_SKEY":"924","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":940,"EQUIP_SKEY":253,"KOR_NM":"ICP etcher (산업화) III","ENG_NM":"ICP etcher (산업화) III","PHOTO_SKEY":"925","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":798,"EQUIP_SKEY":167,"KOR_NM":"ICP etcher I(R\u0026D)","ENG_NM":"ICP etcher I(R\u0026D)","PHOTO_SKEY":"783","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Etching material : Cr, Ti, Al, Pt, Au, TiN, W, ITO, Ni, PR, etc. - Au etch: Ar gas, Etch selectivity(Au/PR)~ 1 - Ti etch: Cl2/Ar gas mixtures - Cr etch: Cl2/O2 gas mixtures, Etch selectivity(Cr/PR)~ 0.3 - Al etch: Cl2/Ar gas mixtures, Etch selectivity(Al/PR)~ 1.5 - Pt etch: HBr/Ar gas mixtures - TiN etch: Cl2/Ar gas mixtures - W etch: Cl2/O2 gas mixtures - Ni etch: Cl2/Ar gas mixtures - ITO etch: Cl2/Ar gas mixtures\u003cbr /\u003eㆍ Uniformity (WIW): 10% - Overetch 10 ~ 20% 이상 권장\u003cbr /\u003eㆍ Uniformity (WTW): 5%※ Pieces sample : 6inch dummy or Si wafer Jig 사용※ 2inch  4inch wafer : 각각 전용 Jig 사용","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":799,"EQUIP_SKEY":168,"KOR_NM":"ICP etcher II(R\u0026D)","ENG_NM":"ICP etcher II(R\u0026D)","PHOTO_SKEY":"784","EQ_ROOM_SKEY":1,"FEATURE":"\r\nㆍ Etching material : III-V compound semiconductor, Al2O3, HfO2\r\nㆍ Uniformity (WIW) : 7%","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":800,"EQUIP_SKEY":169,"KOR_NM":"ICP etcher III(R\u0026D)","ENG_NM":"ICP etcher III(R\u0026D)","PHOTO_SKEY":"785","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Etching material : SiO2, SiN, PMMA -KANC PECVD SiO2 Etch rate : 약 2,700Å/mim -KANC PECVD SiN Etch rate : 약 4,200Å/mim -KANC Imprinted PMMA Etch rate : 약 1,160Å/mim\u003cbr /\u003eㆍ Uniformity (WIW) :   : 5%\u003cbr /\u003eㆍ Uniformity (WIW) :   : 3%※ E-beam Lithography Pattern / 50nm SiO etching on Si※ E-beam Lithography Pattern / 50nm SiN etching on Si※ Imprinted pattern / 400nm PMMA etching on BK-7 glass","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":91,"EQUIP_SKEY":170,"KOR_NM":"ICP etcher IV(R\u0026D)_DRIE","ENG_NM":"ICP etcher IV(R\u0026D)_DRIE","PHOTO_SKEY":"95","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ ICP-RIE etch - Etch Rate : 800~3,000Å/min - Uniformity : 5% - Selectivity : 1.5~3:1(Si:PR)\u003cbr /\u003eㆍ Bosch process - Etch Rate : 0.1~1um/min - Uniformity : 5% - Selectivity : 20~50:1(Si:PR), 100:1(Si:SiO2)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1301,"KOR_NM":"ICP PR asher I(foundry)","ENG_NM":"ICP PR asher I(foundry)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1302,"KOR_NM":"ICP PR asher II(foundry)","ENG_NM":"ICP PR asher II(foundry)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1294,"KOR_NM":"ICP PR asher(R\u0026D)","ENG_NM":"ICP PR asher(R\u0026D)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1313,"KOR_NM":"ICP PR asher(R\u0026D)","ENG_NM":"ICP PR asher(R\u0026D)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1048,"KOR_NM":"I-line Stepper II(양자팹)","ENG_NM":"I-line Stepper II","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":910,"EQUIP_SKEY":511,"KOR_NM":"Insulator / Si Etcher","ENG_NM":"Insulator / Si Etcher","PHOTO_SKEY":"895","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ eMax Process Chamber - Oxide Etch Rate :  3800/min - Uniformity :  3.5% - Selectivity : 6 (SiNx)\r\nㆍ DPS+ Poly Process Chamber - Silicon Etch Rate : 1800/min - Uniformity : 3%\r\nㆍ ASP+ Process Chamber - Temperature : 250 ℃ - Strip Rate :  2um/min - SR uniformity :  15% (M/m)","FEATURE_ENG":"ㆍ eMax Process Chamber - Oxide Etch Rate :  3800/min - Uniformity :  3.5% - Selectivity : 6 (SiNx)\r\nㆍ DPS+ Poly Process Chamber - Silicon Etch Rate : 1800/min - Uniformity : 3%\r\nㆍ ASP+ Process Chamber - Temperature : 250 ℃ - Strip Rate :  2um/min - SR uniformity :  15% (M/m)\r\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":533,"KOR_NM":"Ion Coater","ENG_NM":"Ion Coater","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":70,"EQUIP_SKEY":305,"KOR_NM":"KrF Stepper","ENG_NM":"KrF Stepper","PHOTO_SKEY":"74","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Min. line width : 0.15㎛ (L/S)\r\nㆍ CD uniformity : 22nm\r\nㆍ Overlay accuracy : 28 nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":65,"EQUIP_SKEY":295,"KOR_NM":"Laminating Machine","ENG_NM":"Laminating Machine","PHOTO_SKEY":"69","EQ_ROOM_SKEY":1,"FEATURE":"1) 라미네이팅 속도 : 3M/분2) 라미네이팅 최대폭 : 655MM3) 필름두께 : 25~500MIC4) 기판두께 : 80g/m2~350g/m25) 마운트두께 : 5mm6) 사용온도 : 150℃ MAX  5℃","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":26,"EQUIP_SKEY":201,"KOR_NM":"Lapping and Polishing M/C","ENG_NM":"Lapping and Polishing M/C","PHOTO_SKEY":"30","EQ_ROOM_SKEY":1,"FEATURE":"- working temperature : room temperature- Bonding epoxy type: Alco wax- Bonding force: 0.6MPa- Bonding type: thermocompressive bonding- working pressure: 5~7kg weight- Feed rate: 60~100 rpm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":801,"EQUIP_SKEY":173,"KOR_NM":"Laser Lift-off","ENG_NM":"Laser Lift-off","PHOTO_SKEY":"786","EQ_ROOM_SKEY":1,"FEATURE":"ㆍMaximum beam size : 1  1mm\u003cbr /\u003eㆍMinimum beam size : 500  500um\u003cbr /\u003eㆍMaximum laser power : 400mW @800  800um beam size\u003cbr /\u003eㆍepi crack width : max 30um (shot 경계 영역)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1287,"KOR_NM":"Laser Scriber","ENG_NM":"Laser Scriber","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":255,"KOR_NM":"Liftoff Machine","ENG_NM":"Liftoff Machine","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Lift off : Ti/Au, Cr/Au, Ti/Ag, Ti/Pt, Cr/Cu 등\r\nㆍ PR strip : GXR601, DNRL300-30, DNRL300-40, AZ4620, AZ5214, AZ4330\r\nㆍNi/Cr 100nm ( PR : DNRL300-30) Lift off 전 - 후 [x10]","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":805,"EQUIP_SKEY":188,"KOR_NM":"Lift-Off Wet-Bench(R\u0026D)","ENG_NM":"Lift-Off Wet-Bench(R\u0026D)","PHOTO_SKEY":"790","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Acetone : GXR601, DNRL300-30, DNRL300-40, AZ4620, AZ5214, AZ4330 Lift off\u003cbr /\u003eㆍ ZDMAC : ZEP계열 PR Lift off","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1322,"KOR_NM":"LIV System","ENG_NM":"LIV System","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":71,"EQUIP_SKEY":306,"KOR_NM":"l-line Stepper","ENG_NM":"l-line Stepper","PHOTO_SKEY":"75","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Resolution  - PR : GXR601 (14CP) 0.8um~ 1um  - PEB Condition : 110℃  - Resist Angle : 92.9 degree  - Line Resolution (1:1 Dense Pattern) : 500nm  - Hole Resolution (1:1 Dense Pattern) : 600nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":66,"EQUIP_SKEY":296,"KOR_NM":"Mask Cleaner","ENG_NM":"Mask Cleaner","PHOTO_SKEY":"70","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Process - Particle Remove, PR Remove\r\nㆍ Mask Size : 5 ~ 9 Inch\r\nㆍ Process Temp: ~40℃\r\nㆍ Spin rotation speed: 100~1500rpm\r\nㆍ Spin Unit : Acetone(IPA) / DIW / N2  High Pressure Dispensing","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1318,"KOR_NM":"MBE (As)","ENG_NM":"MBE (As)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1319,"KOR_NM":"MBE (N)","ENG_NM":"MBE (N)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":898,"EQUIP_SKEY":510,"KOR_NM":"Metal Etcher","ENG_NM":"Metal Etcher","PHOTO_SKEY":"883","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Metal Etch Chamber - Al Etch Rate:  4000/min - Selectivity:  1 (PR)\r\nㆍ Ashing Chamber - Temperature: 250 ℃ - Strip Rate:  1um/min - SR uniformity:  15% (M/m)","FEATURE_ENG":"ㆍ Metal Etch Chamber - Al Etch Rate:  4000/min - Selectivity:  1 (PR)\r\nㆍ Ashing Chamber - Temperature: 250 ℃ - Strip Rate:  1um/min - SR uniformity:  15% (M/m)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1049,"KOR_NM":"Microscope II","ENG_NM":"Microscope II","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1481,"KOR_NM":"Microscope IV","ENG_NM":"Microscope IV","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1482,"KOR_NM":"Microscope VI (Auto-Loader)","ENG_NM":"Microscope VI (Auto-Loader)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1278,"KOR_NM":"Microwave Asher (Dual)","ENG_NM":"Microwave Asher (Dual)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1303,"KOR_NM":"Microwave asher (foundry): Dual","ENG_NM":"Microwave asher (foundry): Dual","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1315,"KOR_NM":"Microwave asher (foundry): Dual","ENG_NM":"Microwave asher (foundry): Dual","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":90,"EQUIP_SKEY":166,"KOR_NM":"Mini Furnace","ENG_NM":"Mini Furnace","PHOTO_SKEY":"94","EQ_ROOM_SKEY":1,"FEATURE":"ㆍStandard temperature : 950 degrees Celsius\u003cbr /\u003eㆍRising speed : 7 degrees Celsius per minute\u003cbr /\u003eㆍTemperature uniformity :  2 %","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":816,"EQUIP_SKEY":329,"KOR_NM":"MOCVD (epi) I","ENG_NM":"MOCVD (epi) I","PHOTO_SKEY":"801","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ u-GaAs - mobility  4000 cm2/Vs - background doping : -9E15 /cm3\r\nㆍ GaAs, AlGaAs, GaInP 성장 및 도핑 (Zn, Si)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":817,"EQUIP_SKEY":330,"KOR_NM":"MOCVD (epi) II","ENG_NM":"MOCVD (epi) II","PHOTO_SKEY":"802","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ u-GaN - background doping : -9E16 /cm3 - mobility  200 cm2/Vs\r\nㆍ p-GaN - Mg 도핑 ~1.0 E18/cm3\r\nㆍ LED 성장 - 파장영역 : 400 nm ~ 500 nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1314,"KOR_NM":"MOCVD -\u003e FE-MC10 변경","ENG_NM":"MOCVD -\u003e FE-MC10 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":827,"EQUIP_SKEY":334,"KOR_NM":"MOCVD(epi) Ⅵ","ENG_NM":"MOCVD(epi) Ⅵ","PHOTO_SKEY":"812","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ u-InAlAs - Rs  7000 Ohm/sq - background doping : -5E16 /cm3\r\nㆍ GaAs, AlGaAs, InGaAs, GaInP 성장 및 도핑","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":818,"EQUIP_SKEY":331,"KOR_NM":"MOCVD(epi) III","ENG_NM":"MOCVD(epi) III","PHOTO_SKEY":"803","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ GaAs (Zn) - mobility  200 cm2/Vs - background doping : 6E16/cm3\r\nㆍ GaAs (Si) - mobility  900 cm2/Vs - background doping -3e18/cm3\r\nㆍ GaAs (Te) - mobility  800 cm2/Vs - background doping -3e19/cm3\r\nㆍ InGaP (Si) - mobility  500 cm2/Vs - background doping : -4E18/cm3\r\nㆍ InGaP (Te) - mobility  20 cm2/Vs - background doping : -3E19/cm3","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":819,"EQUIP_SKEY":332,"KOR_NM":"MOCVD(epi) IV","ENG_NM":"MOCVD(epi) IV","PHOTO_SKEY":"804","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ u-In0.53Ga0.47As on InP - Growth rate : ~2.3 A/s - mobility  8000 cm2/Vs (@thickness \u003d 100nm) - background doping : -5E16 /cm3","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":825,"EQUIP_SKEY":333,"KOR_NM":"MOCVD(epi) V","ENG_NM":"MOCVD(epi) V","PHOTO_SKEY":"810","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ u-GaN - As grown : ~ 2000 Ohm/sq - 고저항 특성  10만 Ohm/sq - background doping : -9E15 /cm3\r\nㆍ GaN, AlGaN 성장 및 도핑 (Mg, Si)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":942,"EQUIP_SKEY":335,"KOR_NM":"MOCVD(epi) VII","ENG_NM":"MOCVD(epi) VII","PHOTO_SKEY":"927","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ AlGaN/GaN heterostructure - mobility  1800 cm2/Vs - 2DEG 표면저항  350 Ohm/sq - 2DEG 전자농도  8 E12/cm2","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":39,"EQUIP_SKEY":224,"KOR_NM":"MultiPrep","ENG_NM":"MultiPrep","PHOTO_SKEY":"43","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":67,"EQUIP_SKEY":298,"KOR_NM":"Nano Imprint","ENG_NM":"Nano Imprint","PHOTO_SKEY":"71","EQ_ROOM_SKEY":1,"FEATURE":"Semi-automated and affordable lithography solution, allowing pattern replication in the micro- and nanometer range.\r\nㆍ Min. Pattern Size : 50nm\r\nㆍ Controlled residual thickness : 20nm\r\nㆍ Imprint Uniformity [depth] : 20nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":806,"EQUIP_SKEY":241,"KOR_NM":"Non-contact sheet resistance","ENG_NM":"Non-contact sheet resistance","PHOTO_SKEY":"791","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Capacity : pieces ~ 8 inch\r\r\nㆍ Mapping feature\r\r\nㆍ Statistical analysis feature (SPC feature) : average, min, max, and standard deviation\r\r\nㆍ Measurement range : 0.035 ~ 3000 ohm/sq\r\r\nㆍ Reproducibility","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1292,"KOR_NM":"Non-contact sheet resistance -\u003e FE-SR10 변경","ENG_NM":"Non-contact sheet resistance -\u003e FE-SR10 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":94,"EQUIP_SKEY":178,"KOR_NM":"Optical Thickness Measure System","ENG_NM":"Optical Thickness Measure System","PHOTO_SKEY":"98","EQ_ROOM_SKEY":1,"FEATURE":"ㆍMeasurement Range : 100Å~ 35㎛\u003cbr /\u003eㆍMeasurement material : SiO2,Si3N4,Photo resist","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":79,"EQUIP_SKEY":146,"KOR_NM":"Organic Wet-Bench(Litho) ","ENG_NM":"Organic Wet-Bench(Litho) ","PHOTO_SKEY":"83","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ 2, 4, 6 wafer Process\u003cbr /\u003eㆍ PR Strip 매뉴얼 진행  (Organic Removal of photoresist)\u003cbr /\u003eㆍ DI Rinse 공정\u003cbr /\u003eㆍDry (N2 Gun)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":804,"EQUIP_SKEY":187,"KOR_NM":"Organic Wet-Bench(R\u0026D)","ENG_NM":"Organic Wet-Bench(R\u0026D)","PHOTO_SKEY":"789","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ PR strip : GXR601, DNRL300-30, DNRL300-40, AZ4620, AZ5214, AZ4330\u003cbr /\u003eㆍ Organic cleaning","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1312,"KOR_NM":"Organic Wet-station(foundry)","ENG_NM":"Organic Wet-station(foundry)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":81,"EQUIP_SKEY":149,"KOR_NM":"Organic Wet-station(Litho) ","ENG_NM":"Organic Wet-station(Litho) ","PHOTO_SKEY":"85","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Organic Cleaning\r\nㆍ 2, 4, 6 wafer Processing\r\nㆍ Acetone 10min + IPA 5min (Ultra Sonic) + DIW\r\nㆍ Process Temp. : RT\r\nㆍ Final rinse : up to 15MΩ.㎝\r\nㆍ Process Time : 10 ~ 15min.","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":843,"EQUIP_SKEY":340,"KOR_NM":"Organic Wet-station(R\u0026D)","ENG_NM":"Organic Wet-station(R\u0026D)","PHOTO_SKEY":"828","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ APPS-1 80℃ 2hr (PR striper)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":109,"EQUIP_SKEY":352,"KOR_NM":"Overlay Metrology System","ENG_NM":"Overlay Metrology System","PHOTO_SKEY":"113","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Precision  0.5nm\r\nㆍ TIS(Tool Induced Shift) mean  0.7nm\r\nㆍ TMU(Total Measurement Uncertainty)  1.1nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1297,"KOR_NM":"Parameter analyzer I (FC-PS30통합)","ENG_NM":"Parameter analyzer I (FC-PS30통합)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1298,"KOR_NM":"Parameter analyzer II (FC-PS30으로통합)","ENG_NM":"Parameter analyzer II (FC-PS30으로통합)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":531,"KOR_NM":"Pattern Design Tool","ENG_NM":"Pattern Design Tool","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":796,"EQUIP_SKEY":263,"KOR_NM":"PECVD (산업화) II","ENG_NM":"PECVD (산업화) II","PHOTO_SKEY":"781","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Deposition rate :  670Å/min\nㆍ Unifromity : 3% @6inch (WIW, WTW)\nㆍ Refrective Index : 1.469 @550nm wavelength\nㆍ Maximum thickness : 2um ※ No performance guarantee @ under 300Å thickness","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":51,"EQUIP_SKEY":264,"KOR_NM":"PECVD (산업화) III_P5000","ENG_NM":"PECVD (산업화) III_P5000","PHOTO_SKEY":"55","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ SiO2 - Depo Rate : 9000Å/min@400 ℃ - Uniformity : WIW3% ,WTW3% - Refractive Index : 1.460.03\r\nㆍ Si3N4 - Depo Rate : 8000Å/min @400 ℃ - Uniformity : WIW3% ,WTW3% - Refractive Index : 2.00.03\r\nㆍ SiON - Depo Rate : 5700Å/min@400 ℃ - Uniformity : WIW3% ,WTW3% - Refractive Index : 1.750.03","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1304,"KOR_NM":"PECVD I","ENG_NM":"PECVD I","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":832,"EQUIP_SKEY":336,"KOR_NM":"Photoluminescence","ENG_NM":"Photoluminescence","PHOTO_SKEY":"817","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Capacity : pieces ~ 4 inch\r\nㆍ Laser sources : 266 nm(2 mW), 980 nm (50 mW)\r\nㆍ Measurement range : UV, visible, IR\r\nㆍ Data : peak position, peak intensity, FWHM, and integrated intensity\r\nㆍ Mapping resolution : 0.2 mm\r\nㆍ Measurement temperature : 300 K","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":535,"KOR_NM":"PIPS I","ENG_NM":"PIPS I","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":236,"KOR_NM":"PIPS II","ENG_NM":"PIPS II","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1290,"KOR_NM":"PL mapper -\u003e FE-PL10 변경","ENG_NM":"PL mapper -\u003e FE-PL10 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1299,"KOR_NM":"Probe station I (FC-MO20으로통합)","ENG_NM":"Probe station I (FC-MO20으로통합)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1279,"KOR_NM":"Probe station II (FC-MO10으로통합)","ENG_NM":"Probe station II (FC-MO10으로통합)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":41,"EQUIP_SKEY":239,"KOR_NM":"Probe station III (DC)","ENG_NM":"Probe station III (DC)","PHOTO_SKEY":"45","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Voltage Range : 100 V (HRSMU), 200 V (HPSMU)\nㆍ Current Range : 0.1 A (HRSMU), 1 A (HPSMU)\nㆍ Freq. Range for CV : 20 Hz ~ 2 MHz","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":936,"EQUIP_SKEY":204,"KOR_NM":"Prober","ENG_NM":"Prober","PHOTO_SKEY":"921","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":891,"EQUIP_SKEY":354,"KOR_NM":"Rapid Thermal Process System","ENG_NM":"Rapid Thermal Process System","PHOTO_SKEY":"876","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Temp. Range : 400~1200도\r\nㆍ Ramp up rate : 10~80도/sec\r\nㆍ Temp. stability : 2도","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":901,"EQUIP_SKEY":513,"KOR_NM":"RF Noise Parameter Measurement","ENG_NM":"RF Noise Parameter Measurement","PHOTO_SKEY":"886","EQ_ROOM_SKEY":1,"FEATURE":"\t\t\t\t\t\t\t\t\t\t\t\t0.8 GHz ~ 18 GHz, Noise parameter measurement\t\t\t\t\t\t\t\t\t\t\t\t8 GHz ~ 50 GHz, Noise parameter measurement\t\t\t\t\t\t","FEATURE_ENG":"\"\t\t\t\t\t\t\t\t\t\t\t\t0.8 GHz ~ 18 GHz, Noise parameter measurement\t\t\t\t\t\t\t\t\t\t\t\t8 GHz ~ 50 GHz, Noise parameter measurement\t\t\t\t\t\t\"\r\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":107,"EQUIP_SKEY":351,"KOR_NM":"RF Power Measurement System","ENG_NM":"RF Power Measurement System","PHOTO_SKEY":"111","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Freq. range : 2 GHz ~ 18 GHz\r\nㆍ 측정 Power 범위 : ~ 7 W\r\nㆍ Min. Pulse width : 200 ns","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":246,"KOR_NM":"RIE (산업화)","ENG_NM":"RIE (산업화)","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":808,"EQUIP_SKEY":247,"KOR_NM":"RIE II (산업화)_P5000","ENG_NM":"RIE II (산업화)_P5000","PHOTO_SKEY":"793","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Etching material : Si insulator, metal","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":97,"EQUIP_SKEY":181,"KOR_NM":"RTA (R\u0026D)","ENG_NM":"RTA (R\u0026D)","PHOTO_SKEY":"101","EQ_ROOM_SKEY":1,"FEATURE":"ㆍStandard temperature : 600 degrees Celsius\u003cbr /\u003eㆍRising speed : 15 degrees Celsius per second\u003cbr /\u003eㆍTemperature uniformity :  2 %","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1306,"KOR_NM":"RTA II","ENG_NM":"RTA II","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1285,"KOR_NM":"Scanning PL","ENG_NM":"Scanning PL","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1320,"KOR_NM":"Scribing and Breaking M/C","ENG_NM":"Scribing and Breaking M/C","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":900,"EQUIP_SKEY":512,"KOR_NM":"SiC Etcher","ENG_NM":"SiC Etcher","PHOTO_SKEY":"885","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Wafer temp.(℃) :  150 ℃\r\nㆍ Etch Rate (m/min) :  1.2 m/min (70um via hole)\r\nㆍ Uniformity (%) :  3% (4 inch wafer)\r\nㆍ Selectivity (SiC:GaN) :  30:1\r\nㆍ Selectivity (SiC:Ni) :  25:1\r\nㆍ Profile :  80(Pre Mask Angle 80 이상일 경우)","FEATURE_ENG":"ㆍ Wafer temp.(℃) :  150 ℃ㆍ Etch Rate (m/min) :  1.2 m/min (70um via hole)\r\nㆍ Uniformity (%) :  3% (4 inch wafer)\r\nㆍ Selectivity (SiC:GaN) :  30:1\r\nㆍ Selectivity (SiC:Ni) :  25:1\r\nㆍ Profile :  80(Pre Mask Angle 80 이상일 경우)"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":534,"KOR_NM":"Solar simulator","ENG_NM":"Solar simulator","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":40,"EQUIP_SKEY":234,"KOR_NM":"Spectrophotometer","ENG_NM":"Spectrophotometer","PHOTO_SKEY":"44","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":941,"EQUIP_SKEY":303,"KOR_NM":"Spin Coater ll","ENG_NM":"Spin Coater ll","PHOTO_SKEY":"926","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1305,"KOR_NM":"Spin Etcher","ENG_NM":"Spin Etcher","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":844,"EQUIP_SKEY":341,"KOR_NM":"SPM Wet-station(R\u0026D)","ENG_NM":"SPM Wet-station(R\u0026D)","PHOTO_SKEY":"829","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ SPM cleaning, H2SO4 : H2O2 \u003d 1:4 10min","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":813,"EQUIP_SKEY":287,"KOR_NM":"Spray Developer","ENG_NM":"Spray Developer","PHOTO_SKEY":"798","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ unit1: Spray Development : TMAH , KOH, Na2CO3\nㆍ unit2: Spray DI Rinse system\nㆍ unit2: Hot Plate Temperature Accuracy : 200℃;-2.5℃","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1291,"KOR_NM":"Sputter (R\u0026D I)","ENG_NM":"Sputter (R\u0026D I)","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":53,"EQUIP_SKEY":270,"KOR_NM":"Sputter System (Batch)","ENG_NM":"Sputter System (Batch)","PHOTO_SKEY":"57","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ ITO Depo rate : ~2.8A/s\r\nㆍ Thickness Uniformity :  5% of ITO 2000 Å\r\nㆍ ITO Transmittance : - 93%  5.0% at 100nm @ 465 nm - 87%  5.0% at 200nm @ 465 nm\r\nㆍ ITO Resisitivity (wafer to wafer or within wafer) - 44Ω/sq  5.0% at 100nm - 22Ω/sq  5.0% at 200nm","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":52,"EQUIP_SKEY":269,"KOR_NM":"Sputter System (Cluster)","ENG_NM":"Sputter System (Cluster)","PHOTO_SKEY":"56","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Depo rate / Thickness Uniformity / Resistivity / Stress :  - Ch#2 Ti :  300Å/min /  5.0% / 3.21Ω/sq at 200nm, 2.24Ω/sq at 300nm / 1126 MPa - Ch#2 Ta :  400Å/min /  5.0% - Ch#2 Au :  1300Å/min /  5.0% / 0.24Ω/sq at 200nm, 0.17Ω/sq at 300nm / 50.57 MPa - Ch#2 Ag :  1700Å/min /  5.0% - Ch#3 Pt :  700Å/min /  5.0% - Ch#3 Al :  800Å/min /  5.0% / 0.18Ω/sq at 200nm, 0.03Ω/sq at 1um - Ch#3 Ta(N): 400Å/min. /  5.0% / 12.54Ω/sq at 200nm, Unif. 2.68% / -148.7 MPa - Ch#3 Ti(N): 120Å/min. /  5.0% / 35.99Ω/sq at 200nm, Unif. 7.00% / -10.03 MPa - Ch#5 Cr :  450Å/min /  5.0% / 3.48Ω/sq at 200nm, 2.32Ω/sq at 300nm / 803 MPa - Ch#5 Cu :  800Å/min /  5.0% / 0.07Ω/sq at 300nm, 0.015Ω/sq at 1um / 106.6 MPa","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":532,"KOR_NM":"Sputter(E5500)","ENG_NM":"Sputter(E5500)","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":98,"EQUIP_SKEY":184,"KOR_NM":"Stress Measurement System","ENG_NM":"Stress Measurement System","PHOTO_SKEY":"102","EQ_ROOM_SKEY":1,"FEATURE":"ㆍLaser wavelength : 650nm / 780nm\u003cbr /\u003eㆍScan result : Tensile/Compressive stress(Mpa)         Height(um),Radius(m)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":182,"KOR_NM":"Surface Scan/Profiler","ENG_NM":"Surface Scan/Profiler","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Scan speed : 1~25000um/s\u003cbr /\u003eㆍSampling rate : 5~1000Hz\u003cbr /\u003eㆍMultiscan is available\u003cbr /\u003eㆍApplied force : 0.2~50mg","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":209,"KOR_NM":"Temperature and Humidity Tester","ENG_NM":"Temperature and Humidity Tester","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1323,"KOR_NM":"Test \u0026 Analysis","ENG_NM":"Test \u0026 Analysis","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":937,"EQUIP_SKEY":210,"KOR_NM":"Thermal Shock","ENG_NM":"Thermal Shock","PHOTO_SKEY":"922","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1284,"KOR_NM":"Time Correrated Single Photon Counting System","ENG_NM":"Time Correrated Single Photon Counting System","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":72,"EQUIP_SKEY":307,"KOR_NM":"Track I (2-3 inch)","ENG_NM":"Track I (2-3 inch)","PHOTO_SKEY":"76","EQ_ROOM_SKEY":1,"FEATURE":"- AD unit : 1EA / 200℃ 이하 /  2℃- Coater unit : 1EA (3dispense)- Develop unit : 1EA (TMAH 2.38%) / AZ300MIF- Hot Plate unit : 4EA / 200℃ 이하 /  2℃- Cool Plate unit : 2EA / 30℃ 이하 /  2℃","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":73,"EQUIP_SKEY":308,"KOR_NM":"Track II (4-6 inch)","ENG_NM":"Track II (4-6 inch)","PHOTO_SKEY":"77","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ i-line Stepper용 resist available\nㆍ Coating(AZ GXR601-46cp) thickness  uniformity :  2.0%\nㆍ Development CD uniformity :  3.0%\nㆍ Spin coat and develop photoresist\nㆍ Removal of photoresist\nㆍ Coater unit : 1EA, Develop unit : 1EA\nㆍ Develop unit : 1EA (TMAH 2.38%) /  AZ300MIF\nㆍHot Plate unit : 200℃ 이하\nㆍCool Plate unit 30℃ 이하","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":74,"EQUIP_SKEY":309,"KOR_NM":"Track III (4-6 inch)","ENG_NM":"Track III (4-6 inch)","PHOTO_SKEY":"78","EQ_ROOM_SKEY":1,"FEATURE":"- AD unit : 1EA / 200℃ 이하 /  2℃- Coater unit : 1EA (3dispense)- Develop unit : 1EA (TMAH 2.38%) / AZ300MIF- Hot Plate unit : 4EA / 200℃ 이하 /  2℃- Cool Plate unit : 2EA / 30℃ 이하 /  2℃","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":75,"EQUIP_SKEY":310,"KOR_NM":"Track IV (4-6 inch)","ENG_NM":"Track IV (4-6 inch)","PHOTO_SKEY":"79","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Aligner용 resist available\r\nㆍ Coating(AZ GXR601-46cp) thickness  uniformity :  2.0%\r\nㆍ Coating(DNRL300-40) thickness  uniformity :  3.0%\r\nㆍ Coating(AZ4620) thickness  uniformity :  5.0%\r\nㆍ Development CD uniformity :  3.0%\r\nㆍ Spin coat and develop photoresist\r\nㆍ Removal of photoresist\r\nㆍ Coater unit : 1EA, Develop unit : 1EA\r\nㆍ Develop unit : 1EA (TMAH 2.38%) /  AZ300MIF\r\nㆍ Hot Plate unit : 200℃ 이하\r\nㆍ Cool Plate unit 30℃ 이하","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":943,"EQUIP_SKEY":311,"KOR_NM":"Track V (8inch)","ENG_NM":"Track V (8inch)","PHOTO_SKEY":"928","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Coating range : 0.35~1um\r\nㆍ Baking Temp. : 23~200℃\r\nㆍ Coating thickness uniformity : 1.5% (within 8 inch wafer)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":76,"EQUIP_SKEY":144,"KOR_NM":"Track VI (8inch)","ENG_NM":"Track VI (8inch)","PHOTO_SKEY":"80","EQ_ROOM_SKEY":1,"FEATURE":"- AD unit : 2EA / 200℃ 이하 /  2℃- Coater unit : 2EA (6dispense)- Develop unit : 1EA (TMAH 2.38%) / AZ300MIF- Hot Plate unit : 6EA / 200℃ 이하 /  2℃- Cool Plate unit : 2EA / 30℃ 이하 /  2℃","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":895,"EQUIP_SKEY":507,"KOR_NM":"Track VII(4-6inch)","ENG_NM":"Track VII(4-6inch)","PHOTO_SKEY":"880","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ AD unit : 1EA / 200℃ 이하 /  2℃ - Coater unit : 1EA (2dispense) - Develop unit : 1EA (TMAH 2.38%) / AZ300MIF - Hot Plate unit : 3EA / 200℃ 이하 /  2℃ - Cool Plate unit : 2EA / 30℃ 이하 /  2℃","FEATURE_ENG":"ㆍ AD unit : 1EA / 200℃ 이하 /  2℃ - Coater unit : 1EA (2dispense)\n- Develop unit : 1EA (TMAH 2.38%) / AZ300MIF\n- Hot Plate unit : 3EA / 200℃ 이하 /  2℃\n- Cool Plate unit : 2EA / 30℃ 이하 /  2℃"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1283,"KOR_NM":"UV/VIS/IR/THz Spectroscopic Source","ENG_NM":"UV/VIS/IR/THz Spectroscopic Source","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":100,"EQUIP_SKEY":345,"KOR_NM":"W / Oxide CMP","ENG_NM":"W / Oxide CMP","PHOTO_SKEY":"104","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Removal Rate -  3400 Å/min @ TEOS -  3400 Å/min @ W\n\nㆍ non-uniformity : 3%(Oxide) / 3%(Tungsten) 이하\n\nㆍ Wafer to wafer non-uniformity : 3% 이하","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":117,"EQUIP_SKEY":358,"KOR_NM":"W / plasma CVD","ENG_NM":"W / plasma CVD","PHOTO_SKEY":"121","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ W Gap Fill : Aspect ratio 3 (@ 200nm hole)\r\nㆍ Uniformity - SiNx : 0.93% - TEOS : 2.88% - ACL : 1.86% - W : 2.69%","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":99,"EQUIP_SKEY":344,"KOR_NM":"Wafer Backside Cleaner","ENG_NM":"Wafer Backside Cleaner","PHOTO_SKEY":"103","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ HF : DIW \u003d 1:100\r\nㆍ NH4OH : H2O2 : DIW \u003d 1:1:5\r\nㆍ HCl : H2O2 : DIW \u003d 1:1:5\r\nㆍ N2 blowing\r\nㆍ DIW rinsing","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":88,"EQUIP_SKEY":164,"KOR_NM":"Wafer bonder (R\u0026D)","ENG_NM":"Wafer bonder (R\u0026D)","PHOTO_SKEY":"92","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Bonding method : Eutectic, thermo-compressive bonding\u003cbr /\u003eㆍ Bonding control : Temperature,Bonding pressure,Time","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":529,"KOR_NM":"Wafer Bonding System","ENG_NM":"Wafer Bonding System","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":903,"EQUIP_SKEY":514,"KOR_NM":"Wafer Defect Inspection","ENG_NM":"Wafer Defect Inspection","PHOTO_SKEY":"888","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Throughput : 40 Wafers/Hour (@ Spot Size : 10um)\r\nㆍ Repeatability - Maker standard wafer : ＞ 90% - Optical review accuracy on tool :  4um - SEM review accuracy :  5um\r\nㆍ Alignment : Auto alignment/Manual alignment\r\nㆍ Image : Patch image / Optic image\r\nㆍ Edge Exclusion :  3mm","FEATURE_ENG":"ㆍ Throughput : 40 Wafers/Hour (@ Spot Size : 10um)ㆍ Repeatability\r\n- Maker standard wafer : ＞ 90% - Optical review accuracy on tool :  4um \r\n- SEM review accuracy :  5umㆍ Alignment : Auto alignment/Manual alignment\r\n\r\nㆍ Image : Patch image / Optic image\r\nㆍ Edge Exclusion :  3mm\r\n"},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":172,"KOR_NM":"Wafer Laser Marker","ENG_NM":"Wafer Laser Marker","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":50,"EQUIP_SKEY":261,"KOR_NM":"Wafer surface? particle counter","ENG_NM":"Wafer surface? particle counter","PHOTO_SKEY":"54","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Maximum sensitivity : 90nm\r\nㆍ Throughput : 25 Wafers/Hour (6 wafer)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":27,"EQUIP_SKEY":206,"KOR_NM":"Wire-bonder (Back-end)","ENG_NM":"Wire-bonder (Back-end)","PHOTO_SKEY":"31","EQ_ROOM_SKEY":1,"FEATURE":" ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":46,"EQUIP_SKEY":324,"KOR_NM":"XPS","ENG_NM":"XPS","PHOTO_SKEY":"50","EQ_ROOM_SKEY":1,"FEATURE":"ㆍSurface analysis\r\nㆍDepth profiling","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":807,"EQUIP_SKEY":243,"KOR_NM":"XRD","ENG_NM":"XRD","PHOTO_SKEY":"792","EQ_ROOM_SKEY":1,"FEATURE":"ㆍ Capacity : Pieces ~ 6 inch\r\nㆍ Simulation software\r\nㆍ X-ray generator : 3 kW\r\nㆍ Resolution : 0.0001˚","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1288,"KOR_NM":"XRD -\u003e FE-XD10 변경","ENG_NM":"XRD -\u003e FE-XD10 변경","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1300,"KOR_NM":"XRF","ENG_NM":"XRF","EQ_ROOM_SKEY":1},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"EQUIP_SKEY":1046,"KOR_NM":"XRF","ENG_NM":"XRF","PHOTO_SKEY":"","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국나노기술원","SINGLE_MODE":true,"FILE_SKEY":1097,"EQUIP_SKEY":530,"KOR_NM":"XRF","ENG_NM":"XRF","PHOTO_SKEY":"1088","EQ_ROOM_SKEY":1,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2589,"EQUIP_SKEY":1531,"KOR_NM":"4-point Probe #1","ENG_NM":"4-point Probe #1","PHOTO_SKEY":"2639","EQ_ROOM_SKEY":52,"FEATURE":"Rs Measure","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2590,"EQUIP_SKEY":1532,"KOR_NM":"4-point Probe #2","ENG_NM":"4-point Probe #2","PHOTO_SKEY":"2640","EQ_ROOM_SKEY":52,"FEATURE":"Rs Measure","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"EQUIP_SKEY":1545,"KOR_NM":"외부 장비","ENG_NM":"외부 장비","PHOTO_SKEY":"","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2552,"EQUIP_SKEY":1491,"KOR_NM":"CD-SEM","ENG_NM":"CD-SEM","PHOTO_SKEY":"2602","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2551,"EQUIP_SKEY":1487,"KOR_NM":"Contact aligner","ENG_NM":"Contact aligner","PHOTO_SKEY":"2601","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"EQUIP_SKEY":1540,"KOR_NM":"Contact Aligner (Operator Support)","ENG_NM":"Contact Aligner (Operator Support)","PHOTO_SKEY":"","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2554,"EQUIP_SKEY":1643,"KOR_NM":"Dry Etcher #3_Non metal_A_Chamber","ENG_NM":"Dry Etcher #3_Non metal_A_Chamber","PHOTO_SKEY":"2604","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2554,"EQUIP_SKEY":1644,"KOR_NM":"Dry Etcher #3_Non metal_B_Chamber","ENG_NM":"Dry Etcher #3_Non metal_B_Chamber","PHOTO_SKEY":"2604","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2555,"EQUIP_SKEY":1645,"KOR_NM":"Dry Etcher #5_metal_B_Chamber","ENG_NM":"Dry Etcher #5_metal_B_Chamber","PHOTO_SKEY":"2605","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2555,"EQUIP_SKEY":1646,"KOR_NM":"Dry Etcher #5_metal_D_Chamber","ENG_NM":"Dry Etcher #5_metal_D_Chamber","PHOTO_SKEY":"2605","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2556,"EQUIP_SKEY":1647,"KOR_NM":"Dry Etcher #6_metal_A_Chamber","ENG_NM":"Dry Etcher #6_metal_A_Chamber","PHOTO_SKEY":"2606","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2556,"EQUIP_SKEY":1648,"KOR_NM":"Dry Etcher #6_metal_B_Chamber","ENG_NM":"Dry Etcher #6_metal_B_Chamber","PHOTO_SKEY":"2606","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2556,"EQUIP_SKEY":1649,"KOR_NM":"Dry Etcher #6_metal_C_Chamber","ENG_NM":"Dry Etcher #6_metal_C_Chamber","PHOTO_SKEY":"2606","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2559,"EQUIP_SKEY":1515,"KOR_NM":"E-Beam Evaporator","ENG_NM":"E-Beam Evaporator","PHOTO_SKEY":"2609","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"EQUIP_SKEY":1539,"KOR_NM":"ETRI Engineering Machine (개별 R\u0026D장비)","ENG_NM":"ETRI Engineering Machine (개별 R\u0026D장비)","PHOTO_SKEY":"","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2593,"EQUIP_SKEY":1537,"KOR_NM":"FE-SEM","ENG_NM":"FE-SEM","PHOTO_SKEY":"2643","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2560,"EQUIP_SKEY":1529,"KOR_NM":"Film Measurement #1","ENG_NM":"Film Measurement #1","PHOTO_SKEY":"2610","EQ_ROOM_SKEY":52,"FEATURE":"Film Thickness Measure","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2562,"EQUIP_SKEY":1497,"KOR_NM":"Furnace 11_metal","ENG_NM":"Furnace 11_metal","PHOTO_SKEY":"2612","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2563,"EQUIP_SKEY":1498,"KOR_NM":"Furnace 12_Non metal","ENG_NM":"Furnace 12_Non metal","PHOTO_SKEY":"2613","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2564,"EQUIP_SKEY":1499,"KOR_NM":"Furnace 13_Non metal","ENG_NM":"Furnace 13_Non metal","PHOTO_SKEY":"2614","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2565,"EQUIP_SKEY":1500,"KOR_NM":"Furnace 14_Non metal","ENG_NM":"Furnace 14_Non metal","PHOTO_SKEY":"2615","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2566,"EQUIP_SKEY":1501,"KOR_NM":"Furnace 21_Non metal","ENG_NM":"Furnace 21_Non metal","PHOTO_SKEY":"2616","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2567,"EQUIP_SKEY":1502,"KOR_NM":"Furnace 22_Non metal","ENG_NM":"Furnace 22_Non metal","PHOTO_SKEY":"2617","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2568,"EQUIP_SKEY":1503,"KOR_NM":"Furnace 23_Non metal","ENG_NM":"Furnace 23_Non metal","PHOTO_SKEY":"2618","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2557,"EQUIP_SKEY":1650,"KOR_NM":"HDP Dry Etcher_Non metal_PM1_Chamber","ENG_NM":"HDP Dry Etcher_Non metal_PM1_Chamber","PHOTO_SKEY":"2607","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2557,"EQUIP_SKEY":1651,"KOR_NM":"HDP Dry Etcher_Non metal_PM2_Chamber","ENG_NM":"HDP Dry Etcher_Non metal_PM2_Chamber","PHOTO_SKEY":"2607","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2570,"EQUIP_SKEY":1496,"KOR_NM":"High Ion Implanter","ENG_NM":"High Ion Implanter","PHOTO_SKEY":"2620","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2558,"EQUIP_SKEY":1524,"KOR_NM":"ICP Dry Etcher_Non metal","ENG_NM":"ICP Dry Etcher_Non metal","PHOTO_SKEY":"2608","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"EQUIP_SKEY":1761,"KOR_NM":"Ion Implanter #3","ENG_NM":"Ion Implanter #3","PHOTO_SKEY":"","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"EQUIP_SKEY":1541,"KOR_NM":"ITO Deposition (Operator Support)","ENG_NM":"ITO Deposition (Operator Support)","PHOTO_SKEY":"","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2571,"EQUIP_SKEY":1516,"KOR_NM":"Laser Marking","ENG_NM":"Laser Marking","PHOTO_SKEY":"2621","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2577,"EQUIP_SKEY":1533,"KOR_NM":"Long Scan Profiler","ENG_NM":"Long Scan Profiler","PHOTO_SKEY":"2627","EQ_ROOM_SKEY":52,"FEATURE":"Wafer Thickness Measuring","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"EQUIP_SKEY":1542,"KOR_NM":"Low Temp PECVD (Operator Support)","ENG_NM":"Low Temp PECVD (Operator Support)","PHOTO_SKEY":"","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2572,"EQUIP_SKEY":1505,"KOR_NM":"LPCVD 24_Non metal","ENG_NM":"LPCVD 24_Non metal","PHOTO_SKEY":"2622","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2573,"EQUIP_SKEY":1506,"KOR_NM":"LPCVD 31_Non metal","ENG_NM":"LPCVD 31_Non metal","PHOTO_SKEY":"2623","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2574,"EQUIP_SKEY":1507,"KOR_NM":"LPCVD 32_Non metal","ENG_NM":"LPCVD 32_Non metal","PHOTO_SKEY":"2624","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2575,"EQUIP_SKEY":1508,"KOR_NM":"LPCVD 33_Non metal","ENG_NM":"LPCVD 33_Non metal","PHOTO_SKEY":"2625","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2576,"EQUIP_SKEY":1509,"KOR_NM":"LPCVD 34_Non metal","ENG_NM":"LPCVD 34_Non metal","PHOTO_SKEY":"2626","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2578,"EQUIP_SKEY":1535,"KOR_NM":"Microscope #1","ENG_NM":"Microscope #1","PHOTO_SKEY":"2628","EQ_ROOM_SKEY":52,"FEATURE":"Microscope를 적용한 웨이퍼상의 형상 관찰// 배율 100~6000X (고배율 현미경) ","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2580,"EQUIP_SKEY":1489,"KOR_NM":"Oven #1","ENG_NM":"Oven #1","PHOTO_SKEY":"2630","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2581,"EQUIP_SKEY":1490,"KOR_NM":"Oven #2","ENG_NM":"Oven #2","PHOTO_SKEY":"2631","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2583,"EQUIP_SKEY":1534,"KOR_NM":"Particle Counter","ENG_NM":"Particle Counter","PHOTO_SKEY":"2633","EQ_ROOM_SKEY":52,"FEATURE":"Particle Counting","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2584,"EQUIP_SKEY":1652,"KOR_NM":"PECVD #2_metal_A_Chamber (Oxide)","ENG_NM":"PECVD #2_metal_A_Chamber (Oxide)","PHOTO_SKEY":"2634","EQ_ROOM_SKEY":52,"FEATURE":"Oxide Dep. (Ch.A)//Nitride Dep. (Ch.C)//Oxynitride Dep. (Ch.A or C)//BPSG Dep. (Ch.B)//TEOS Dep. (Ch.B)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2584,"EQUIP_SKEY":1653,"KOR_NM":"PECVD #2_metal_B_Chamber (BPSG, TEOS)","ENG_NM":"PECVD #2_metal_B_Chamber (BPSG, TEOS)","PHOTO_SKEY":"2634","EQ_ROOM_SKEY":52,"FEATURE":"Oxide Dep. (Ch.A)//Nitride Dep. (Ch.C)//Oxynitride Dep. (Ch.A or C)//BPSG Dep. (Ch.B)//TEOS Dep. (Ch.B)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2584,"EQUIP_SKEY":1654,"KOR_NM":"PECVD #2_metal_C_Chamber (Nitride, Oxynitride)","ENG_NM":"PECVD #2_metal_C_Chamber (Nitride, Oxynitride)","PHOTO_SKEY":"2634","EQ_ROOM_SKEY":52,"FEATURE":"Oxide Dep. (Ch.A)//Nitride Dep. (Ch.C)//Oxynitride Dep. (Ch.A or C)//BPSG Dep. (Ch.B)//TEOS Dep. (Ch.B)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2585,"EQUIP_SKEY":1655,"KOR_NM":"PECVD #5_metal_A_Chamber (Oxide, Nitride)","ENG_NM":"PECVD #5_metal_A_Chamber (Oxide, Nitride)","PHOTO_SKEY":"2635","EQ_ROOM_SKEY":52,"FEATURE":"Oxide Dep. (Ch.A)//Nitride Dep. (Ch.A)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2586,"EQUIP_SKEY":1525,"KOR_NM":"PR Strip #1","ENG_NM":"PR Strip #1","PHOTO_SKEY":"2636","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"EQUIP_SKEY":1747,"KOR_NM":"PR Strip #2_Non metal_PM1 Chamber","ENG_NM":"PR Strip #2_Non metal_PM1 Chamber","PHOTO_SKEY":"","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"EQUIP_SKEY":1748,"KOR_NM":"PR Strip #2_Non metal_PM2 Chamber","ENG_NM":"PR Strip #2_Non metal_PM2 Chamber","PHOTO_SKEY":"","EQ_ROOM_SKEY":52,"FEATURE":"","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2588,"EQUIP_SKEY":1527,"KOR_NM":"PR Strip #3_Non metal","ENG_NM":"PR Strip #3_Non metal","PHOTO_SKEY":"2638","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2582,"EQUIP_SKEY":1488,"KOR_NM":"Projection aligner","ENG_NM":"Projection aligner","PHOTO_SKEY":"2632","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2591,"EQUIP_SKEY":1504,"KOR_NM":"Rapid Thermal Anneal","ENG_NM":"Rapid Thermal Anneal","PHOTO_SKEY":"2641","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2592,"EQUIP_SKEY":1492,"KOR_NM":"SOG Coater","ENG_NM":"SOG Coater","PHOTO_SKEY":"2642","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2561,"EQUIP_SKEY":1530,"KOR_NM":"Spectroscpic Ellipsometer #3","ENG_NM":"Spectroscpic Ellipsometer #3","PHOTO_SKEY":"2611","EQ_ROOM_SKEY":52,"FEATURE":"Film Thickness, n, k Measure","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2594,"EQUIP_SKEY":1656,"KOR_NM":"Sputter #1_B_Chamber (Mo)","ENG_NM":"Sputter #1_B_Chamber (Mo)","PHOTO_SKEY":"2644","EQ_ROOM_SKEY":52,"FEATURE":"Al1%Si, TiW, NiV, Cr, Mo Sputtring","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2594,"EQUIP_SKEY":1657,"KOR_NM":"Sputter #1_C_Chamber (Al, Ni, Cr)","ENG_NM":"Sputter #1_C_Chamber (Al, Ni, Cr)","PHOTO_SKEY":"2644","EQ_ROOM_SKEY":52,"FEATURE":"Al1%Si, TiW, NiV, Cr, Mo Sputtring","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2595,"EQUIP_SKEY":1658,"KOR_NM":"Sputter #2_A2_Chamber (RF Clean)","ENG_NM":"Sputter #2_A2_Chamber (RF Clean)","PHOTO_SKEY":"2645","EQ_ROOM_SKEY":52,"FEATURE":"Al1%Si, Ti, TiN Sputtering, RF Clean, Alloy","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2595,"EQUIP_SKEY":1659,"KOR_NM":"Sputter #2_A3_Chamber (AlSi)","ENG_NM":"Sputter #2_A3_Chamber (AlSi)","PHOTO_SKEY":"2645","EQ_ROOM_SKEY":52,"FEATURE":"Al1%Si, Ti, TiN Sputtering, RF Clean, Alloy","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2595,"EQUIP_SKEY":1660,"KOR_NM":"Sputter #2_A5_Chamber (Ti, TiN)","ENG_NM":"Sputter #2_A5_Chamber (Ti, TiN)","PHOTO_SKEY":"2645","EQ_ROOM_SKEY":52,"FEATURE":"Al1%Si, Ti, TiN Sputtering, RF Clean, Alloy","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2595,"EQUIP_SKEY":1661,"KOR_NM":"Sputter #2_A6_Chamber (Alloy)","ENG_NM":"Sputter #2_A6_Chamber (Alloy)","PHOTO_SKEY":"2645","EQ_ROOM_SKEY":52,"FEATURE":"Al1%Si, Ti, TiN Sputtering, RF Clean, Alloy","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2596,"EQUIP_SKEY":1662,"KOR_NM":"Sputter #3_B_Chamber (TiW)","ENG_NM":"Sputter #3_B_Chamber (TiW)","PHOTO_SKEY":"2646","EQ_ROOM_SKEY":52,"FEATURE":"Al1%Si, TiW Sputtering","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2596,"EQUIP_SKEY":1663,"KOR_NM":"Sputter #3_C_Chamber (AlSi)","ENG_NM":"Sputter #3_C_Chamber (AlSi)","PHOTO_SKEY":"2646","EQ_ROOM_SKEY":52,"FEATURE":"Al1%Si, TiW Sputtering","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2597,"EQUIP_SKEY":1485,"KOR_NM":"Stepper (I-line#11)","ENG_NM":"Stepper (I-line#11)","PHOTO_SKEY":"2647","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2598,"EQUIP_SKEY":1486,"KOR_NM":"Stepper (I-line#12)","ENG_NM":"Stepper (I-line#12)","PHOTO_SKEY":"2648","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2599,"EQUIP_SKEY":1483,"KOR_NM":"Track System #1","ENG_NM":"Track System #1","PHOTO_SKEY":"2649","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2600,"EQUIP_SKEY":1484,"KOR_NM":"Track System #3","ENG_NM":"Track System #3","PHOTO_SKEY":"2650","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2602,"EQUIP_SKEY":1664,"KOR_NM":"Wet Station #1_B1_Bath (PR Strip_metal)","ENG_NM":"Wet Station #1_B1_Bath (PR Strip_metal)","PHOTO_SKEY":"2652","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2602,"EQUIP_SKEY":1665,"KOR_NM":"Wet Station #1_B2_Bath (PR Strip_non metal)","ENG_NM":"Wet Station #1_B2_Bath (PR Strip_non metal)","PHOTO_SKEY":"2652","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2602,"EQUIP_SKEY":1666,"KOR_NM":"Wet Station #1_B3_Bath (PR Develop)","ENG_NM":"Wet Station #1_B3_Bath (PR Develop)","PHOTO_SKEY":"2652","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2602,"EQUIP_SKEY":1667,"KOR_NM":"Wet Station #1_D1_Bath(metal) (DI)","ENG_NM":"Wet Station #1_D1_Bath(metal) (DI)","PHOTO_SKEY":"2652","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2602,"EQUIP_SKEY":1668,"KOR_NM":"Wet Station #1_D2_Bath(non metal) (DI)","ENG_NM":"Wet Station #1_D2_Bath(non metal) (DI)","PHOTO_SKEY":"2652","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2603,"EQUIP_SKEY":1669,"KOR_NM":"Wet Station #2_Non metal_B1_Bath (H3PO4)","ENG_NM":"Wet Station #2_Non metal_B1_Bath (H3PO4)","PHOTO_SKEY":"2653","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2603,"EQUIP_SKEY":1670,"KOR_NM":"Wet Station #2_Non metal_B2_Bath (H2SO4)","ENG_NM":"Wet Station #2_Non metal_B2_Bath (H2SO4)","PHOTO_SKEY":"2653","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2603,"EQUIP_SKEY":1671,"KOR_NM":"Wet Station #2_Non metal_B3_Bath (LAL1000)","ENG_NM":"Wet Station #2_Non metal_B3_Bath (LAL1000)","PHOTO_SKEY":"2653","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2603,"EQUIP_SKEY":1672,"KOR_NM":"Wet Station #2_Non metal_B4_Bath (100:1HF)","ENG_NM":"Wet Station #2_Non metal_B4_Bath (100:1HF)","PHOTO_SKEY":"2653","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2603,"EQUIP_SKEY":1673,"KOR_NM":"Wet Station #2_Non metal_B5_Bath (7:1BHF)","ENG_NM":"Wet Station #2_Non metal_B5_Bath (7:1BHF)","PHOTO_SKEY":"2653","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2603,"EQUIP_SKEY":1674,"KOR_NM":"Wet Station #2_Non metal_D1_Bath (DI)","ENG_NM":"Wet Station #2_Non metal_D1_Bath (DI)","PHOTO_SKEY":"2653","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2604,"EQUIP_SKEY":1675,"KOR_NM":"Wet Station #3_Non metal_B1_Bath (H2SO4)","ENG_NM":"Wet Station #3_Non metal_B1_Bath (H2SO4)","PHOTO_SKEY":"2654","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2604,"EQUIP_SKEY":1676,"KOR_NM":"Wet Station #3_Non metal_B2_Bath (SC1)","ENG_NM":"Wet Station #3_Non metal_B2_Bath (SC1)","PHOTO_SKEY":"2654","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2604,"EQUIP_SKEY":1677,"KOR_NM":"Wet Station #3_Non metal_B3_Bath (100:1HF)","ENG_NM":"Wet Station #3_Non metal_B3_Bath (100:1HF)","PHOTO_SKEY":"2654","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2604,"EQUIP_SKEY":1678,"KOR_NM":"Wet Station #3_Non metal_D1_Bath (DI)","ENG_NM":"Wet Station #3_Non metal_D1_Bath (DI)","PHOTO_SKEY":"2654","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2605,"EQUIP_SKEY":1679,"KOR_NM":"Wet Station #4_Non metal_B1_Bath (H2SO4)","ENG_NM":"Wet Station #4_Non metal_B1_Bath (H2SO4)","PHOTO_SKEY":"2655","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 50:1 BHF//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1 (Sonic)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2605,"EQUIP_SKEY":1680,"KOR_NM":"Wet Station #4_Non metal_B2_Bath (SC1)","ENG_NM":"Wet Station #4_Non metal_B2_Bath (SC1)","PHOTO_SKEY":"2655","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 50:1 BHF//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1 (Sonic)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2605,"EQUIP_SKEY":1681,"KOR_NM":"Wet Station #4_Non metal_B3_Bath (100:1HF)","ENG_NM":"Wet Station #4_Non metal_B3_Bath (100:1HF)","PHOTO_SKEY":"2655","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 50:1 BHF//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1 (Sonic)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2605,"EQUIP_SKEY":1682,"KOR_NM":"Wet Station #4_Non metal_B4_Bath (50:1HF)","ENG_NM":"Wet Station #4_Non metal_B4_Bath (50:1HF)","PHOTO_SKEY":"2655","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 50:1 BHF//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1 (Sonic)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2605,"EQUIP_SKEY":1683,"KOR_NM":"Wet Station #4_Non metal_D1_Bath (DI)","ENG_NM":"Wet Station #4_Non metal_D1_Bath (DI)","PHOTO_SKEY":"2655","EQ_ROOM_SKEY":52,"FEATURE":"Cleaning Cold DI//Cleaning 50:1 BHF//Cleaning 100:1 HF//Cleaning H2SO4//Cleaning STD//Cleaning SC1 (Sonic)","FEATURE_ENG":""},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2606,"EQUIP_SKEY":1684,"KOR_NM":"Wet Station #5_metal_B1_Bath (LAL1000)","ENG_NM":"Wet Station #5_metal_B1_Bath (LAL1000)","PHOTO_SKEY":"2656","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2606,"EQUIP_SKEY":1685,"KOR_NM":"Wet Station #5_metal_B3_Bath (H2SO4)","ENG_NM":"Wet Station #5_metal_B3_Bath (H2SO4)","PHOTO_SKEY":"2656","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2606,"EQUIP_SKEY":1686,"KOR_NM":"Wet Station #5_metal_B3_Bath (Metal Etchant)","ENG_NM":"Wet Station #5_metal_B3_Bath (Metal Etchant)","PHOTO_SKEY":"2656","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2606,"EQUIP_SKEY":1687,"KOR_NM":"Wet Station #5_metal_B4_Bath (50:1HF)","ENG_NM":"Wet Station #5_metal_B4_Bath (50:1HF)","PHOTO_SKEY":"2656","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2606,"EQUIP_SKEY":1688,"KOR_NM":"Wet Station #5_metal_D1_Bath (DI)","ENG_NM":"Wet Station #5_metal_D1_Bath (DI)","PHOTO_SKEY":"2656","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2606,"EQUIP_SKEY":1689,"KOR_NM":"Wet Station #5_non metal_D2_Bath (DI)","ENG_NM":"Wet Station #5_non metal_D2_Bath (DI)","PHOTO_SKEY":"2656","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2607,"EQUIP_SKEY":1519,"KOR_NM":"Wet Station #6","ENG_NM":"Wet Station #6","PHOTO_SKEY":"2657","EQ_ROOM_SKEY":52},{"firstIndex":0,"recordCountPerPage":10,"MRO_SKEY":0,"EQ_ROOM_NAME":"한국전자통신연구원","SINGLE_MODE":true,"FILE_SKEY":2601,"EQUIP_SKEY":1538,"KOR_NM":"Wire Bonding #1","ENG_NM":"Wire Bonding #1","PHOTO_SKEY":"2651","EQ_ROOM_SKEY":52}]}